BH616UV1610AI-55 - The BH616UV1610 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 16 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV1610AIG55 - The BH616UV1610 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 16 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010 - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010AI-55 - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010AIG55 - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010DI-55 - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010TI-55 - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010 - Ultra Low Power/high Speed Cmos Sram 512k X 16 Bit
BH616UV8010AI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010AI-55 - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010AI-70 - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010AIG55 - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010AIG70 - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010DI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010DI-55 - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010DI-70 - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010DIG70 - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TC - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TI-55 - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010TI-70 - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TIG70 - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH62UV1600 - Ultra Low Power/high Speed Cmos Sram 2m X 8 Bit
BH62UV1600AI - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
BH62UV1600AI-55 - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV1600AI-70 - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
BH62UV1600AIG55 - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV1600AIG70 - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
BH62UV1600TI-55 - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV1600TIG55 - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000DI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000SI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000STI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000TI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000AI-55 - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000AIG55 - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000DI-55 - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000TIG55 - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BS616LV1010 - Very Low Power/voltage Cmos Sram 64k X 16 Bit