HYE18L128160BW-7.5 Infineon - 128Mb 1.8 Core Voltagenfineon Technologies\' Mobile-RAM cuts power consumption by up to 80% thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated power management features for both pre-tested Known Good Die (KGD) / wafer solution and chips.
HYE18L256160BFL-7.5 Infineon - 256Mb 1.8 Core Voltagenfineon Technologies\' Mobile-RAM cuts power consumption by up to 80% thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated power management features for both pre-tested Known Good Die (KGD) / wafer solution and chips.
HYE18L256160CF-6 Infineon - 512Mb 1.8 Core Voltagenfineon Technologies\' Mobile-RAM cuts power consumption by up to 80% thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated power management features for both pre-tested Known Good Die (KGD) / wafer solution and chips.
HYE18L512160BF-7.5 Infineon - 512Mb 1.8 Core Voltagenfineon Technologies\' Mobile-RAM cuts power consumption by up to 80% thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated power management features for both pre-tested Known Good Die (KGD) / wafer solution and chips.
HYE18L512320BF-7.5 Infineon - 512Mb 1.8 Core Voltagenfineon Technologies\' Mobile-RAM cuts power consumption by up to 80% thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated power management features for both pre-tested Known Good Die (KGD) / wafer solution and chips.
HYE18P128160AF-12.5 Infineon - Low Power SRAM performance at DRAM costs. CellularRAM is targeted at replacing SRAM in next-generation mobile phones by providingA high capacity, high bandwidth and power efficient memory solution atA very attractive cost/bit ratio.
HYE18P128160AF-9.6 Infineon - Low Power SRAM performance at DRAM costs. CellularRAM is targeted at replacing SRAM in next-generation mobile phones by providingA high capacity, high bandwidth and power efficient memory solution atA very attractive cost/bit ratio.
HYE18P64160AF-12.5 Infineon - Low Power SRAM performance at DRAM costs. CellularRAM is targeted at replacing SRAM in next-generation mobile phones by providingA high capacity, high bandwidth and power efficient memory solution atA very attractive cost/bit ratio.
HYE18P64160AF-9.6 Infineon - Low Power SRAM performance at DRAM costs. CellularRAM is targeted at replacing SRAM in next-generation mobile phones by providingA high capacity, high bandwidth and power efficient memory solution atA very attractive cost/bit ratio.
HYE18P64160AW-12.5 Infineon - Low Power SRAM performance at DRAM costs. CellularRAM is targeted at replacing SRAM in next-generation mobile phones by providingA high capacity, high bandwidth and power efficient memory solution atA very attractive cost/bit ratio.
HYE18P64160AW-9.6 Infineon - Low Power SRAM performance at DRAM costs. CellularRAM is targeted at replacing SRAM in next-generation mobile phones by providingA high capacity, high bandwidth and power efficient memory solution atA very attractive cost/bit ratio.
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