10-Channel Gamma Buffer
with V
COM
Driver
ADD8710
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
2004 Analog Devices, Inc. All rights reserved.
FEATURES
Single-supply operation: 4.5 V to 16.5 V
Upper/lower buffers swing to V
S
/GND
Gamma continuous output current: >10 mA
V
COM
peak output current: 250 mA
Offset voltage: 12 mV
Slew rate: 8 V/s
Unity gain stable with large capacitive loads
Supply current: 700 A per amplifier
Compact 28-lead TSSOP
Pb-free package
Drop-in replacement for BUF11702
APPLICATIONS
TFT LCD monitor panels
TFT LCD notebook panels
GENERAL DESCRIPTION
The ADD8710 is a low cost, 10-channel gamma buffer with a
V
COM
driver that operates from a single supply. The part is
designed for high resolution TFT LCD panels, and is built on an
advanced, high voltage CBCMOS process.
The gamma buffers have a high slew rate, minimum 10 mA
output current, and a high capacitive load drive capability. The
V
COM
buffer is capable of delivering 250 mA of peak current,
and can also drive large capacitive loads. The ADD8710 offers
wide supply range and offset voltages below 12 mV.
The ADD8710 is specified over the -40C to +85C
temperature range and is available in a Pb-free 28-lead
TSSOP package.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
V
S
GND
NC
OUT1
OUT2
OUT3
OUT4
OUT5
OUT6
OUT7
OUT8
OUT9
OUT10
OUTCOM
28
27
26
25
24
23
22
21
20
19
18
17
16
15
ADD8710
GND
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
IN9
IN10
INCOM
V
S
04889-0-001
NC = NO CONNECT
Figure 1. 28-Lead TSSOP (RU Suffix)
FUNCTIONAL BLOCK DIAGRAM
1
ADD8710
V
S
GND
NC
OUT1
OUT2
OUT3
OUT4
OUT5
OUT6
OUT7
OUT8
OUT9
OUT10
OUTCOM
GND
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
IN9
IN10
INCOM
V
S
04889-0-002
2
3
4
5
6
7
8
9
10
V
COM
Figure 2.
ADD8710
Rev. 0 | Page 2 of 12
TABLE OF CONTENTS
Electrical Characteristics ................................................................. 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Typical Performance Characteristics ..............................................5
Outline Dimensions ....................................................................... 10
Ordering Guide .......................................................................... 10
REVISION HISTORY
6/04--Revision 0: Initial Version
ADD8710
Rev. 0 | Page 3 of 12
ELECTRICAL CHARACTERISTICS
V
S
= 16 V, V
CM
= V
S
/2, T
A
@ 25C, unless otherwise noted.
Table 1.
Parameter
Symbol
Condition
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Applies to all channels
Offset Voltage
V
OS
4
12
mV
Offset Voltage Drift
V
OS
/
T
40C T
A
+85C
5
V/C
Input Bias Current
I
B
0.5
1.1
A
40C T
A
+85C
1.5
A
Input Impedance
Z
IN
400
k
Input Capacitance
C
IN
1
pF
BUFFER CHARACTERISTICS
Output Voltage High (V1)
V
OH
V
S
= 16 V, V
I
= 16 V, I
L
= 10 mA
15.82
15.9
V
V
S
= 10 V, V
I
= 9.8 V, I
L
= 10 mA
9.75
9.8
V
40C T
A
+85C
9.7
V
Output Voltage High (V2 to V5)
V
OH
V
S
= 10 V, V
I
= 8.5 V, I
L
= 10 mA
8.45
8.5
V
40C T
A
+85C
8.4
V
Output Voltage High (V6 to V10)
V
OH
V
S
= 10 V, V
I
= 8 V, I
L
= 10 mA
7.95
8
V
40C T
A
+85C
7.9
V
Output Voltage Low (V1 to V5)
V
OL
V
S
= 10 V, V
I
= 2 V, I
L
= 10 mA
2
2.05
V
-40C T
A
+85C
2.10
V
Output Voltage Low (V6 to V9)
V
OL
V
S
= 10 V, V
I
= 1.5 V, I
L
= 10 mA
1.5
1.55
V
40C T
A
+85C
1.60
V
Output Voltage Low (V10)
V
OL
V
S
= 16 V, V
I
= 0 V, I
L
= 10 mA
0.1
0.175
V
V
S
= 10 V, V
I
= 0.2 V, I
L
= 10 mA
0.2
0.25
V
40C T
A
+85C
0.3
V
Continuous Output Current
I
OUT
10
mA
Peak Output Current
I
PK
V
S
= 16 V
100
mA
V
COM
CHARACTERISTICS
Output Voltage High
V
OH
V
S
= 10 V, V
I
= 8 V, I
L
= 30 mA
7.95
8
40C T
A
+85C
7.9
Output Voltage Low
V
OL
V
S
= 10 V, V
I
= 2 V, I
L
= 30 mA
2
2.05
40C T
A
+85C
2.10
Continuous Output Current
I
OUT
35
mA
Peak Output Current
I
PK
V
S
= 16 V
250
mA
SUPPLY CHARACTERISTICS
Supply Voltage
V
S
4.5
16.5
V
Power Supply Rejection Ratio
PSRR
V
S
= 4.5 V to 16.5 V, 40C T
A
+85C
70
90
dB
Total Supply Current
I
SY
V
O
= V
S
/2, No Load
7.7
10
mA
40C T
A
+85C
11.5
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L
= 2 k, C
L
= 200 pF
4
8
V/s
Bandwidth
BW
3 dB, R
L
= 10 k, C
L
= 200 pF
5
MHz
Settling Time to 0.1% (Buffers)
t
S
1 V step, R
L
= 10 k, C
L
= 200 pF
1.1
s
Settling Time to 0.1% (V
COM
)
t
S
1 V step, R
L
= 10 k, C
L
= 200 pF
0.7
s
Phase Margin
o
R
L
= 10 k, C
L
= 200 pF
45
Degree
Channel Separation
75
dB
ADD8710
Rev. 0 | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Supply Voltage (V
S
)
18 V
Input Voltage
-0.5 V to V
S
+ 0.5 V
Storage Temperature Range
-65C to +150C
Operating Temperature Range
-40C to +85C
Junction Temperature Range
-65C to +150C
Lead Temperature Range
300C
ESD Tolerance (HBM)
2500 V
ESD Tolerance (MM)
200 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect device reliability.
Table 3. Package Characteristics
Package Type
JA
1
Unit
28-Lead TSSOP (RU)
67.7
C/W
1
JA
is specified for worst case conditions, i.e.,
JA
is specified for devices
soldered on to a circuit board for surface mount packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
ADD8710
Rev. 0 | Page 5 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
800
700
600
500
400
300
200
100
0
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
V
OS
(mV)
NUMBE
R
OF UNITS
T = 25
C
V
DD
= 4.5V TO 16V
04889-0-003
Figure 3. Input Offset Voltage
300
250
200
150
100
50
0
3
75
21
72
24
69
27
66
30
63
3
3
60
36
57
39
5
4
42
TCV
OS
(
V/
C)
NUMBE
R OF UNITS
04889-0-004
48
51
45
6
9
12
15
18
78
Figure 4. Input Offset Voltage Drift Distribution
5
4
3
2
1
0
TEMPERATURE (
C)
IN
PU
T OFFSET VOLTA
GE (
m
V)
04889-0-005
4
3
2
1
120
40
20
0
20
40
60
80
100
V1
V2
V3
V4
V5
V6
V7
V8
V9
V10
V
COM
Figure 5. Input Offset Voltage vs. Temperature
SUPPLY VOLTAGE (V)
S
U
P
P
L
Y
CURRE
NT/BUFFE
R (mA)
04889-0-006
0
2
4
6
8
10
12
14
16
18
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Figure 6. Supply Current/Buffer v. Supply Voltage
1.0
0.9
0.7
0.6
0.5
0.4
TEMPERATURE (
C)
S
U
P
P
L
Y
CURRE
NT/BUFFE
R (mA)
04889-0-007
0
0.1
0.2
0.3
120
40
20
0
20
40
60
80
100
0.8
Figure 7. Supply Current/Buffer vs. Temperature
600
400
200
0
TEMPERATURE (
C)
INP
U
T BIAS
CURRE
NT (nA)
04889-0-008
400
200
120
40
20
0
20
40
60
80
100
V1
V2
V3
V4
V5
V6
V7
V8
V9
V10
V
COM
Figure 8. Input Bias Current vs. Temperature
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