ADG441
ADG444

IN1

IN2

IN3

IN4

ADG442

IN1

IN2

IN3

IN4

SWITCHES SHOWN FOR A LOGIC "1" INPUT

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700

Fax: 617/326-8703

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

MOS Quad SPST Switches

ADG441/ADG442/ADG444

FEATURES
44 V Supply Maximum Ratings
V

to V

Analog Signal Range

Low On Resistance (< 70

)

Low

max)

Low R

Match (3

max)

Low Power Dissipation
Fast Switching Times

< 110 ns

OFF

< 60 ns

Low Leakage Currents ( 3 nA max)
Low Charge Injection (6 pC max)
Break-Before-Make Switching Action
Latch-Up Proof
Plug-In Upgrade for

DG201A/ADG201A, DG202A/ADG202A,
DG211/ADG211A

Plug in Replacement for DG441/DG442/DG444

APPLICATIONS
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Battery Powered Systems
Sample Hold Systems
Communication Systems

FUNCTIONAL BLOCK DIAGRAMS

GENERAL DESCRIPTION

The ADG441, ADG442 and ADG444 are monolithic CMOS
devices comprising four independently selectable switches. They
are designed on an enhanced LC

MOS process that provides

low power dissipation yet gives high switching speed and low on
resistance.

The on resistance profile is very flat over the full analog input
range ensuring good linearity and low distortion when switching
audio signals. High switching speed also makes the parts suit-
able for video signal switching. CMOS construction ensures
ultralow power dissipation making the parts ideally suited for
portable and battery powered instruments.

The ADG441, ADG442 and ADG444 contain four indepen-
dent SPST switches. Each switch of the ADG441 and ADG444
turns on when a logic low is applied to the appropriate control
input. The ADG442 switches are turned on with a logic high on
the appropriate control input. The ADG441 and ADG444
switches differ in that the ADG444 requires a 5 V logic power
supply which is applied to the V

pin. The ADG441 and

ADG442 do not have a V

pin, the logic power supply being

generated internally by an on-chip voltage generator.

Each switch conducts equally well in both directions when ON
and has an input signal range that extends to the power sup-
plies. In the OFF condition, signal levels up to the supplies are
blocked. All switches exhibit break-before-make switching action
for use in multiplexer applications. Inherent in the design is low
charge injection for minimum transients when switching the
digital inputs.

PRODUCT HIGHLIGHTS

1. Extended Signal Range

The ADG441/ADG442/ADG444 are fabricated on an en-
hanced LC

MOS, trench-isolated process, giving an in-

creased signal range that extends to the supply rails.

2. Low Power Dissipation

3. Low R

4. Trench Isolation Guards Against Latch Up

A dielectric trench separates the P and N channel transistors
thereby preventing latch up even under severe overvoltage
conditions.

5. Break-Before-Make Switching

This prevents channel shorting when the switches are config-
ured as a multiplexer.

6. Single Supply Operation

For applications where the analog signal is unipolar, the
ADG441/ADG442/ADG444 can be operated from a single
rail power supply. The parts are fully specified with a single
+12 V power supply.

REV. 0

B Version

T Version

40

C to

55

C to

Parameter

+25

+85

+25

+125

Units

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

to V

typ

8.5 V, I

= 10 mA

max

= +13.5 V, V

= 13.5 V

typ

8.5 V

+8.5 V

max

Match

typ

= 0 V, I

= 10 mA

max

LEAKAGE CURRENTS

= +16.5 V, V

= 16.5 V

Source OFF Leakage I

(OFF)

0.01

nA typ

15.5 V, V

= 15.5 V;

0.5

nA max

Test Circuit 2

Drain OFF Leakage I

(OFF)

0.01

nA typ

15.5 V, V

= 15.5 V;

0.5

nA max

Test Circuit 2

Channel ON Leakage I

, I

(ON)

0.08

nA typ

= V

15.5 V;

0.5

nA max

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V

INH

2.4

V min

Input Low Voltage, V

INL

0.8

V max

Input Current

INL

or I

INH

0.00001

A typ

= V

INL

or V

INH

0.5

A max

DYNAMIC CHARACTERISTICS

ns typ

= 1 k

, C

= 35 pF;

110

170

110

170

ns max

10 V; Test Circuit 4

OFF

ns typ

= 1 k

, C

= 35 pF;

ns max

10 V; Test Circuit 4

OPEN

ns typ

= 1 k

, C

= 35 pF;

Charge Injection

pC typ

= 0 V, R

= 0

, C

= 1 nF;

pC max

= +15 V, V

= 15 V;

Test Circuit 5

OFF Isolation

dB typ

= 50

, C

= 5 pF;

f = 1 MHz; Test Circuit 6

Channel-to-Channel Crosstalk

100

dB typ

= 50

, C

= 5 pF;

f = 1 MHz; Test Circuit 7

(OFF)

pF typ

f = 1 MHz

(OFF)

pF typ

f = 1 MHz

, C

(ON)

pF typ

f = 1 MHz

POWER REQUIREMENTS

= +16.5 V, V

= 16.5 V

Digital Inputs = 0 V or 5 V

ADG441/ADG442

A max

ADG444

0.001

A typ

2.5

A max

0.0001

A typ

2.5

A max

(ADG444 Only)

0.001

A typ

= +5.5 V

2.5

A max

NOTES

Temperature ranges are as follows: B Versions: 40

C to +85

C; T Versions: 55

C to +125

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

ADG441/ADG442/ADG444SPECIFICATIONS

Dual Supply

= +15 V

10%, V

= 15 V

10%, V

= +5 V

10% (ADG444), GND = 0 V, unless otherwise noted)

ORDERING GUIDE

Model

Temperature Range

Package Option

ADG441BN

C to +85

N-16

ADG441BR

C to +85

R-16A

ADG441TQ

C to +125

Q-16

ADG442BN

C to +85

N-16

ADG442BR

C to +85

R-16A

ADG444BN

C to +85

N-16

ADG444BR

C to +85

R-16A

OTES

To order MIL-STD-883, Class B processed parts, add /883B to T grade part

numbers.

N = Plastic DIP, R = 0.15" Small Outline IC (SOIC), Q = Cerdip.

REV. 0

ADG441/ADG442/ADG444

Table I. Truth Table

ADG441/ADG444

ADG442

Switch

Condition

OFF

B Version

T Version

40

C to

55

C to

Parameter

+25

+85

+25

+125

Units

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 to V

typ

= +3 V, +8 V, I

= 10 mA;

110

130

110

130

max

= +10.8 V

typ

+3 V

+8 V

max

Match

typ

= 6 V, I

= 10 mA

max

LEAKAGE CURRENT

= +13.2 V

Source OFF Leakage I

(OFF)

0.01

nA typ

= 12.2 V/1 V, V

= 1 V/12.2 V;

0.5

nA max

Test Circuit 2

Drain OFF Leakage I

(OFF)

0.01

nA typ

= 12.2 V/1 V, V

= 1 V/12.2 V;

0.5

nA max

Test Circuit 2

Channel ON Leakage I

, I

(ON)

0.08

nA typ

= V

= 12.2 V/1 V;

0.5

nA max

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V

INH

2.4

V min

Input Low Voltage, V

INL

0.8

V max

Input Current

INL

or I

INH

0.00001

A typ

= V

INL

or V

INH

0.5

A max

DYNAMIC CHARACTERISTICS

105

ns typ

= 1 k

, C

= 35 pF;

150

220

150

220

ns max

= +8 V; Test Circuit 4

OFF

ns typ

= 1 k

, C

= 35 pF;

100

ns max

= +8 V; Test Circuit 4

OPEN

ns typ

= 1 k

, C

= 35 pF;

Charge Injection

pC typ

= 6 V, R

= 0

, C

= 1 nF;

pC max

= +12 V, V

= 0 V;

Test Circuit 5

OFF Isolation

dB typ

= 50

, C

= 5 pF, f = 1 MHz;

Test Circuit 6

Channel-to-Channel Crosstalk

100

dB typ

= 50

, C

= 5 pF, f = 1 MHz;

Test Circuit 7

(OFF)

pF typ

f = 1 MHz

(OFF)

pF typ

f = 1 MHz

, C

(ON)

pF typ

f = 1 MHz

POWER REQUIREMENTS

= +13.2 V

Digital Inputs = 0 V or 5 V

ADG441/ADG442

A max

ADG444

0.001

A typ

2.5

A max

(ADG444 Only)

0.001

A typ

= +5.5 V

2.5

A max

NOTES

Temperature ranges are as follows: B Versions: 40

C to +85

C; T Versions: 55

C to +125

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

Single Supply

= +12 V

10%, V

= 0 V, V

= +5 V

10% (ADG444), GND = 0 V, unless otherwise noted)

ADG441/ADG442/ADG444

REV. 0

ABSOLUTE MAXIMUM RATINGS

= +25

C unless otherwise noted)

to V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to +25 V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to 25 V

to GND . . . . . . . . . . . . . . . . . . . . . . 0.3 V to V

+ 0.3 V

Analog, Digital Inputs

. . . . . . . . . . . . V

2 V to V

+ 2 V

or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle Max)

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . . . 40

C to +85

Extended (T Version) . . . . . . . . . . . . . . . . 55

C to +125

Storage Temperature Range . . . . . . . . . . . . . 65

C to +150

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150

Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . 76

C/W

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . +300

Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 177

C/W

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . +260

SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . 77

C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220

NOTES

Stresses above those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability. Only
one absolute maximum rating may be applied at any one time.

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.

ADG441/ADG442 PIN CONFIGURATION (DIP/SOIC)

NC = NO CONNECT

IN1

IN2

GND

IN4

IN3

TOP VIEW

(Not to Scale)

ADG441
ADG442

ADG444 PIN CONFIGURATION (DIP/SOIC)

TERMINOLOGY

Most Positive Power Supply Potential.

Most Negative Power Supply Potential in dual
supplies. In single supply applications, it may be
connected to ground.

Logic Power Supply (+5 V).

GND

Ground (0 V) Reference.

Source Terminal. May be an input or output.

Drain Terminal. May be an input or output.

Logic Control Input.

Ohmic resistance between D and S.

Match

Difference between the R

of any two channels.

(OFF)

Source leakage current with the switch "OFF."

(OFF)

Drain leakage current with the switch "OFF."

, I

(ON)

Channel leakage current with the switch "ON."

)

Analog voltage on terminals D, S.

(OFF)

"OFF" Switch Source Capacitance.

(OFF)

"OFF" Switch Drain Capacitance.

, C

(ON)

"ON" Switch Capacitance.

Delay between applying the digital control
input and the output switching on.

OFF

Delay between applying the digital control
input and the output switching off.

OPEN

Break-Before-Make Delay when switches are
configured as a multiplexer.

Crosstalk

A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.

Off Isolation

A measure of unwanted signal coupling through
an "OFF" switch.

Charge

A measure of the glitch impulse transferred from

Injection

the digital input to the analog output during
switching.

CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

IN1

IN2

GND

IN4

IN3

TOP VIEW

(Not to Scale)

ADG444

ADG441/ADG442/ADG444

REV. 0

TRENCH ISOLATION

In the ADG441, ADG442 and ADG444, an insulating oxide
layer (trench) is placed between the NMOS and the PMOS
transistors of each CMOS switch. Parasitic junctions, which oc-
cur between the transistors in junction isolated switches, are
eliminated, the result being a completely latch-up proof switch.

In junction isolation, the N and P wells of the PMOS and
NMOS transistors form a diode that is reverse-biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward biased. A silicon-controlled rectifier
(SCR) type circuit is formed by the two transistors causing a sig-
nificant amplification of the current which, in turn, leads to
latch up. With trench isolation, this diode is removed, the result
being a latch-up proof switch.

Trench isolation also leads to lower leakage currents. The
ADG441, ADG442 and ADG444 have a leakage current
of 0.5 nA as compared with a leakage current of several
nanoamperes in non-trench isolated switches. Leakage current is
an important parameter in sample-and-hold circuits, this current
being responsible for the discharge of the holding capacitor with
time causing droop. The ADG441/ADG442/ADG444's low
leakage current, along with its fast switching speeds, make it
suitable for fast and accurate sample-and-hold circuits.

Typical Performance Characteristics

NMOS

PMOS

P-WELL

N-WELL

BURIED OXIDE LAYER

SUBSTRATE (BACK GATE)

TRENCH

LOCOS

Figure 1. Trench Isolation

170

130

 Volts

= +25

150

110

= +5V

= 0V

= +10V

= 0V

= +12V

= 0V

= +15V

= 0V

100

10

15

 Volts

= +25

= +5V

= 5V

= +12V

= 12V

= +15V

= 15V

= +10V

= 10V

Figure 3. R

as a Function of V

): Single Supply

Figure 2. R

as a Function of V

): Dual Supply

ADG441/ADG442/ADG444

REV. 0

100

15

10

+125

+25

+85

= +15V

= 15V

) Volts

Figure 4. R

as a Function of V

) for Different

Temperatures

0.02

0.01

10

15

0.00

0.01

, V

 Volts

LEAKAGE CURRENT nA

= +15V

= 15V

= +25

(OFF)

(ON)

Figure 5. Leakage Currents as a Function of V

)

120

10M

110

100k

10k

FREQUENCY Hz

100

= +15V

= 15V

CROSSTALK

OFF ISOLATION

Figure 6. Crosstalk and Off Isolation vs. Frequency

120

) Volts

+25

100

= +12V

= 0V

+85

+125

Figure 7. R

as a Function of V

) for Different

Temperatures

0.010

0.005

0.000

0.005

, V

 Volts

LEAKAGE CURRENT nA

= +12V

= 0V

= +25

(ON)

(OFF)

Figure 8. Leakage Currents as a Function of V

)

20

10

15

 Volts

Q pC

12

= 1nF

= +15V

= 15V

= +12V

= 0V

Figure 9. Charge Injection vs. Source Voltage

ADG441/ADG442/ADG444

REV. 0

120

100

 ns

SUPPLY VOLTAGE

 Volts

= +8V

OFF

Figure 10. Switching Time vs. Bipolar Supply

160

100

140

SUPPLY VOLTAGE Volts

 ns

120

= +8V

OFF

Figure 11. Switching Time vs. Single Supply

Test Circuits

= V

Test Circuit 1. On Resistance

Test Circuit 3. On Leakage

Test Circuit 2. Off Leakage

(OFF)

(ON)

GND

0.1

15V

35pF

OUT

0.1

+15V

+5V

OFF

90%

50%

ADG442

ADG441/ADG444

OUT

Test Circuit 4. Switching Times

ADG441/ADG442/ADG444

REV. 0

PRINTED IN U.S.A.

C1890184/94

GND

15V

1nF

OUT

+15V

+5V

OUT

INJ

= C

OUT

Test Circuit 5. Charge Injection

GND

0.1

15V

OUT

0.1

+15V

+5V

Test Circuit 6. Off Isolation

GND

0.1

15V

0.1

+15V

+5V

IN1

IN2

OUT

CHANNEL-TO-CHANNEL CROSSTALK = 20

LOG

OUT

Test Circuit 7. Channel-to-Channel Crosstalk

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

Plastic DIP (N-16)

0.011

(0.28)

0.18
(4.57)
MAX

0.3 (7.62)

PIN 1

0.25

(6.35)

0.31

(7.87)

0.87 (22.1) MAX

0.125
(3.18)
MIN

0.035
(0.89)

0.18 (4.57)

SEATING
PLANE

0.018 (0.46)

0.033 (0.84)

0.1 (2.54)

BSC

Small Outline IC (R-16A)

0.2440 (6.20)

0.2284 (5.80)

0.1574 (4.00)

0.1497 (3.80)

PIN 1

0.0688 (1.75)

0.0532 (1.35)

0.3937 (10.00)

0.3859 (9.80)

0.0500 (1.27)

BSC

SEATING
PLANE

0.0098 (0.25)

0.0040 (0.10)

0.0192 (0.49)

0.0138 (0.35)

 8

0.0099 (0.25)

0.0075 (0.19)

0.0196 (0.50)

0.0099 (0.25)

0.0500 (1.27)

0.0160 (0.41)

Cerdip (Q-16)

0.015 (0.381)

0.008 (0.204)

0.320 (8.13)

0.290 (7.37)

PIN 1

0.310 (7.87)

0.220 (5.59)

0.840 (21.34) MAX

0.060 (1.52)

0.015 (0.38)

0.150
(3.81)
MIN

0.200
(5.08)

MAX

PLANE

SEATING

0.022 (0.558)

0.014 (0.356)

0.100 (2.54)

BSC

0.070 (1.78)

0.30 (0.76)

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: ADG442BN

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: ADG442BN