REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
ADG719
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 1998
CMOS
Low Voltage 4 SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
IN
ADG719
S2
S1
SWITCHES SHOWN FOR A LOGIC "1" INPUT
D
FEATURES
+1.8 V to +5.5 V Single Supply
4 (Max) On Resistance
0.75
(Typ) On-Resistance Flatness
3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead SOIC Package
Fast Switching Times
t
ON
20 ns
t
OFF
6 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance and
low leakage currents.
The ADG719 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices.
Each switch of the ADG719 conducts equally well in both di-
rections when on. The ADG719 exhibits break-before-make
switching action.
Because of the advanced submicron process, 3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719 is available in a 6-lead SOT-23 package and an
8-lead
SOIC package.
PRODUCT HIGHLIGHTS
1. +1.8 V to +5.5 V Single Supply Operation. The ADG719
offers high performance, including low on resistance and fast
switching times and is fully specified and guaranteed with
+3 V and +5 V supply rails.
2. Very Low R
ON
(4
max at 5 V, 10
max at 3 V). At 1.8 V
operation, R
ON
is typically 40
over the temperature range.
3. On-Resistance Flatness (R
FLAT(ON)
) (0.75
typ).
4. 3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
ON
/t
OFF.
7. Tiny 6-lead SOT-23 and 8-lead
SOIC packages.
2
REV. A
ADG719SPECIFICATIONS
1
B Version
40 C to
Parameter
+25 C
+85 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance (R
ON
)
4
5
max
V
S
= 0 V to V
DD
, I
S
= 10 mA
Test Circuit 1
On Resistance Match Between
Channels (
R
ON
)
0.1
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
0.4
max
On-Resistance Flatness (R
FLAT(ON)
)
0.75
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
1.2
max
LEAKAGE CURRENTS
V
DD
= +5.5 V
Source OFF Leakage I
S
(OFF)
0.01
nA typ
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
0.25
0.35
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.01
nA typ
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V
0.25
0.35
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4
V min
Input Low Voltage, V
INL
0.8
V max
Input Current
I
INL
or I
INH
0.005
A typ
V
IN
= V
INL
or V
INH
0.1
A max
DYNAMIC CHARACTERISTICS
2
t
ON
14
ns typ
R
L
= 300
, C
L
= 35 pF
20
ns max
V
S
= 3 V, Test Circuit 4
t
OFF
3
ns typ
R
L
= 300
, C
L
= 35 pF
6
ns max
V
S
= 3 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
8
ns typ
R
L
= 300
, C
L
= 35 pF,
1
ns min
V
S1
= V
S2
= 3 V, Test Circuit 5
Off Isolation
67
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
87
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
Channel-to-Channel Crosstalk
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Bandwidth 3 dB
200
MHz typ
R
L
= 50
, C
L
= 5 pF, Test Circuit 8
C
S
(OFF)
7
pF typ
C
D
, C
S
(ON)
27
pF typ
POWER REQUIREMENTS
V
DD
= +5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001
A typ
1.0
A max
NOTES
1
Temperature ranges are as follows: B Version, 40
C to +85
C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +5 V 10%, GND = 0 V. All specifications 40 C to +85 C,
unless otherwise
noted.)
3
REV. A
ADG719
B Version
40 C to
Parameter
+25 C
+85 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance (R
ON
)
6
7
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA,
10
max
Test Circuit 1
On Resistance Match Between
Channels (
R
ON
)
0.1
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
0.4
max
On-Resistance Flatness (R
FLAT(ON)
)
2.5
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
LEAKAGE CURRENTS
V
DD
= +3.3 V
Source OFF Leakage I
S
(OFF)
0.01
nA typ
V
S
= 3 V/1 V, V
D
= 1 V/3 V,
0.25
0.35
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.01
nA typ
V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V,
0.25
0.35
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.4
V max
Input Current
I
INL
or I
INH
0.005
A typ
V
IN
= V
INL
or V
INH
0.1
A max
DYNAMIC CHARACTERISTICS
2
t
ON
16
ns typ
R
L
= 300
, C
L
= 35 pF
24
ns max
V
S
= 2 V, Test Circuit 4
t
OFF
4
ns typ
R
L
= 300
, C
L
= 35 pF
7
ns max
V
S
= 2 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
8
ns typ
R
L
= 300
, C
L
= 35 pF
1
ns min
V
S1
= V
S2
= 2 V, Test Circuit 5
Off Isolation
67
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
87
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
Channel-to-Channel Crosstalk
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Bandwidth 3 dB
200
MHz typ
R
L
= 50
, C
L
= 5 pF, Test Circuit 8
C
S
(OFF)
7
pF typ
C
D
, C
S
(ON)
27
pF typ
POWER REQUIREMENTS
V
DD
= +3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001
A typ
1.0
A max
NOTES
1
Temperature ranges are as follows: B Version, 40
C to +85
C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +3 V 10%, GND = 0 V. All specifications 40 C to +85 C,
unless otherwise noted.)
SPECIFICATIONS
1
ADG719
4
REV. A
ORDERING GUIDE
Model
Temperature Range
Brand*
Package Description
Package Option
ADG719BRM
40
C to +85
C
S5B
SOIC (microSmall Outline IC)
RM-8
ADG719BRT
40
C to +85
C
S5B
SOT-23 (Plastic Surface Mount)
RT-6
*Brand = Due to package size limitations, these three characters represent the part number.
PIN CONFIGURATIONS
Table I. Truth Table
ADG719 IN
Switch S1
Switch S2
0
ON
OFF
1
OFF
ON
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG719 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25
C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . . 0.3 V to V
DD
+ 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . 40
C to +85
C
Storage Temperature Range . . . . . . . . . . . . . 65
C to +150
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206
C/W
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44
C/W
SOT-23 Package, Power Dissipation . . . . . . . . . . . . . . 282 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6
C/W
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220
C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
6-Lead SOT-23
(RT-6)
TOP VIEW
(Not to Scale)
6
5
4
1
2
3
IN
V
DD
GND
S2
D
S1
ADG719
8-Lead SOIC
(RM-8)
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
NC = NO CONNECT
D
S1
GND
S2
NC
IN
NC
V
DD
ADG719
TERMINOLOGY
V
DD
Most Positive Power Supply Potential.
GND
Ground (0 V) Reference.
S
Source Terminal. May be an input or output.
D
Drain Terminal. May be an input or output.
IN
Logic Control Input.
R
ON
Ohmic resistance between D and S.
R
ON
On resistance match between any two channels
i.e., R
ON
max R
ON
min.
R
FLAT(ON)
Flatness is defined as the difference between the
maximum and minimum value of on resistance as
measured over the specified analog signal range.
I
S
(OFF)
Source Leakage Current with the switch "OFF."
I
D
, I
S
(ON)
Channel Leakage Current with the switch "ON."
V
D
(V
S
)
Analog Voltage on Terminals D, S.
C
S
(OFF)
"OFF" Switch Source Capacitance.
C
D
(OFF)
"OFF" Switch Drain Capacitance.
C
D
, C
S
(ON) "ON" Switch Capacitance.
t
ON
Delay between applying the digital control input
and the output switching on.
t
OFF
Delay between applying the digital control input
and the output switching off.
t
D
"OFF" time or "ON" time measured between the
90% points of both switches, when switching
from one address state to another.
Crosstalk
A measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through
an "OFF" switch.
Bandwidth
The frequency at which the output is attenuated
by 3 dBs.
On Response The frequency reponse of the "ON" switch.
On Loss
The voltage drop across the "ON" switch seen on
the On Response vs. Frequency plot as how many
dBs the signal is away from 0 dB at very low
frequencies.
ADG719
5
REV. A
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE V
5.0
0
0
5.0
0.5
R
ON
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
4.5
4.0
3.5
3.0
2.5
2.0
V
DD
= 2.7V
V
DD
= 3.0V
V
DD
= 4.5V
V
DD
= 5.0V
1.5
1.0
0.5
T
A
= +25 C
6.0
5.5
Figure 1. On Resistance as a Function of V
D
(V
S
) Single
Supplies
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE V
5.0
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5.5
6.0
0
3.0
0.5
R
ON
1.0
1.5
2.0
2.5
V
DD
= +3V
+85 C
+25 C
40 C
Figure 2. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 3 V
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE V
0
0
5.0
0.5
R
ON
1.0
1.5
2.0
2.5
3.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
3.5
4.0
4.5
V
DD
= +5V
5.0
4.5
4.0
+85 C
40 C
+25 C
6.0
5.5
Figure 3. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 5 V
FREQUENCY Hz
1n
10
I
SUPPLY
A
100
1k
10k
100k
1M
10M
100M
10n
100n
1
10
100
1m
10m
1
V
DD
= +5V
Figure 4. Supply Current vs. Input Switching Frequency
FREQUENCY Hz
120
OFF ISOLATION dB
10k
100k
1M
10M
100M
110
100
90
130
80
70
60
50
40
30
V
DD
= +5V, +3V
Figure 5. Off Isolation vs. Frequency
FREQUENCY Hz
120
10k
100k
1M
10M
100M
110
100
90
130
80
70
60
50
40
30
V
DD
= +5V, +3V
CROSSTALK dB
Figure 6. Crosstalk vs. Frequency
Typical Performance Characteristics
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