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which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
ADG736
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 1998
CMOS
Low Voltage 4 Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
S1A
S1B
IN1
S2A
S2B
IN2
ADG736
D1
D2
SWITCHES
SHOWN
FOR
A
LOGIC
"1"
INPUT
FEATURES
+1.8 V to +5.5 V Single Supply
2.5 (Typ) On Resistance
Low On-Resistance Flatness
3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead SOIC Package
Fast Switching Times
t
ON
16 ns
t
OFF
8 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Audio and Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG736 is a monolithic device comprising two indepen-
dently selectable CMOS SPDT switches. These switches are
designed on a submicron process that provides low power dissi-
pation yet gives high switching speed, low on resistance, low
leakage currents and wide input signal bandwidth.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG736 can operate from a single +1.8 V to +5.5 V sup-
ply, making it ideally suited to portable and battery powered
instruments.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the power supplies.
The ADG736 exhibits break-before-make switching action.
The ADG736 is available in a 10-lead
SOIC package.
PRODUCT HIGHLIGHTS
1.
+1.8 V to +5.5 V Single Supply Operation.
The ADG736 offers high performance, including low on
resistance and fast switching times and is fully specified and
guaranteed with +3 V and +5 V supply rails.
2.
Very Low R
ON
(4.5
Max at 5 V, 8
Max at 3 V).
At supply voltage of +1.8 V, R
ON
is typically 35
over the
temperature range.
3.
Low On-Resistance Flatness.
4.
3 dB Bandwidth >200 MHz.
5.
Low Power Dissipation.
CMOS construction ensures low power dissipation.
6.
Fast t
ON
/t
OFF
.
7.
Break-Before-Make Switching Action.
8.
10-Lead
SOIC Package.
2
REV. 0
ADG736SPECIFICATIONS
1
(V
DD
= +5 V 10%, GND = 0 V. All Specifications 40 C to +85 C, unless otherwise
noted.)
B Version
40 C to
Parameter
+25 C
+85 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On-Resistance (R
ON
)
2.5
typ
V
S
= 0 V to V
DD
, I
DS
= 10 mA;
4
4.5
max
Test Circuit 1
On-Resistance Match Between
Channels (
R
ON
)
0.1
typ
V
S
= 0 V to V
DD
, I
DS
= 10 mA
0.4
max
On-Resistance Flatness (R
FLAT(ON)
)
0.5
typ
V
S
= 0 V to V
DD
, I
DS
= 10 mA
1.2
max
LEAKAGE CURRENTS
V
DD
= +5.5 V
Source OFF Leakage I
S
(OFF)
0.01
nA typ
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
0.1
0.3
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.01
nA typ
V
S
= V
D
= 1 V or 4.5 V;
0.1
0.3
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4
V min
Input Low Voltage, V
INL
0.8
V max
Input Current
I
INL
or I
INH
0.005
A typ
V
IN
= V
INL
or V
INH
0.1
A max
DYNAMIC CHARACTERISTICS
2
t
ON
12
ns typ
R
L
= 300
, C
L
= 35 pF
16
ns max
V
S
= 3 V, Test Circuit 4
t
OFF
5
ns typ
R
L
= 300
, C
L
= 35 pF
8
ns max
V
S
= 3 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
7
ns typ
R
L
= 300
, C
L
= 35 pF
1
ns min
V
S1
= V
S2
= 3 V, Test Circuit 5
Off Isolation
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz;
Test Circuit 6
Channel-to-Channel Crosstalk
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
Bandwidth 3 dB
200
MHz typ
R
L
= 50
, C
L
= 5 pF; Test Circuit 8
C
S
(OFF)
9
pF typ
C
D
, C
S
(ON)
32
pF typ
POWER REQUIREMENTS
V
DD
= +5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001
A typ
1.0
A max
NOTES
1
Temperature ranges are as follows: B Version: 40
C to +85
C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
3
REV. 0
ADG736
SPECIFICATIONS
1
B Version
40 C to
Parameter
+25 C
+85 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On-Resistance (R
ON
)
5
5.5
typ
V
S
= 0 V to V
DD
, I
DS
= 10 mA;
8
max
Test Circuit 1
On-Resistance Match Between
Channels (
R
ON
)
0.1
typ
V
S
= 0 V to V
DD
, I
DS
= 10 mA
0.4
max
On-Resistance Flatness (R
FLAT(ON)
)
2.5
typ
V
S
= 0 V to V
DD
, I
DS
= 10 mA
LEAKAGE CURRENTS
V
DD
= +3.3 V
Source OFF Leakage I
S
(OFF)
0.01
nA typ
V
S
= 3 V/1 V, V
D
= 1 V/3 V;
0.1
0.3
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.01
nA typ
V
S
= V
D
= 1 V or 3 V;
0.1
0.3
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.4
V max
Input Current
I
INL
or I
INH
0.005
A typ
V
IN
= V
INL
or V
INH
0.1
A max
DYNAMIC CHARACTERISTICS
2
t
ON
14
ns typ
R
L
= 300
, C
L
= 35 pF
20
ns max
V
S
= 2 V; Test Circuit 4
t
OFF
6
ns typ
R
L
= 300
, C
L
= 35 pF
10
ns max
V
S
= 2 V; Test Circuit 4
Break-Before-Make Time Delay, t
D
7
ns typ
R
L
= 300
, C
L
= 35 pF
1
ns min
V
S1
= V
S2
= 2 V; Test Circuit 5
Off Isolation
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz;
Test Circuit 6
Channel-to-Channel Crosstalk
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
Bandwidth 3 dB
200
MHz typ
R
L
= 50
, C
L
= 5 pF; Test Circuit 8
C
S
(OFF)
9
pF typ
C
D
, C
S
(ON)
32
pF typ
POWER REQUIREMENTS
V
DD
= +3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001
A typ
1.0
A max
NOTES
1
Temperature ranges are as follows: B Version: 40
C to +85
C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +3 V 10%, GND = 0 V. All Specifications 40 C to +85 C, unless otherwise noted.)
ADG736
4
REV. 0
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG736 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25
C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to +6 V
Analog, Digital Inputs
2
. . . . . . . . . . . . 0.3 V to V
DD
+0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . 40
C to +85
C
Storage Temperature Range . . . . . . . . . . . . . 65
C to +150
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 205
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220
C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE
Temperature
Package
Model
Range
Brand
1
Option
2
ADG736BRM
40
C to +85
C
SAB
RM-10
NOTES
1
Brand = Due to small package size, these three characters represent the part
number.
2
RM =
SOIC.
PIN CONFIGURATION
(10-Lead SOIC)
10
9
8
7
6
1
2
3
4
5
IN1
S1A
GND
S2A
IN2
D1
S1B
V
DD
S2B
D2
TOP VIEW
(Not to Scale)
ADG736
TERMINOLOGY
V
DD
Most positive power supply potential.
GND
Ground (0 V) reference.
S
Source terminal. May be an input or output.
D
Drain terminal. May be an input or output.
IN
Logic control input.
R
ON
Ohmic resistance between D and S.
R
ON
On resistance match between any two chan-
nels i.e., R
ON
maxR
ON
min.
R
FLAT(ON)
Flatness is defined as the difference between
the maximum and minimum value of on resis-
tance as measured over the specified analog
signal range.
I
S
(OFF)
Source leakage current with the switch "OFF."
I
D
, I
S
(ON)
Channel leakage current with the switch "ON."
V
D
(V
S
)
Analog voltage on terminals D, S.
C
S
(OFF)
"OFF" switch source capacitance.
C
D
, C
S
(ON)
"ON" switch capacitance.
t
ON
Delay between applying the digital control
input and the output switching on. See Test
Circuit 4.
t
OFF
Delay between applying the digital control
input and the output switching off.
t
D
"OFF" time or "ON" time measured between
the 90% points of both switches, when switch-
ing from one address state to another. See
Test Circuit 5.
Crosstalk
A measure of unwanted signal that is coupled
through from one channel to another as a
result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling
through an "OFF" switch.
Bandwidth
The frequency at which the output is attenu-
ated by 3 dBs.
On Response
The frequency response of the "ON" switch.
On Loss
The voltage drop across the "ON" switch,
seen on the On Response versus frequency
plot as how many dBs the signal is away from
0 dB at very low frequencies.
Table I. Truth Table
Logic
Switch A
Switch B
0
OFF
ON
1
ON
OFF
ADG736
5
REV. 0
Typical Performance Characteristics
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE Volts
6
R
ON
0
0
0.5
0.5
1
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DD
= +3V
V
DD
= +4.5V
V
DD
= +5V
V
DD
= +2.7V
T
A
= +25 C
Figure 1. On Resistance as a Function of V
D
(V
S
) Single
Supplies
V
D
OR V
S
SOURCE OR DRAIN VOLTAGE Volts
6
R
ON
0
0
+85 C
0.5
1
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
3
V
DD
= +3V
40 C
0.5
1.5
2
2.5
+25 C
Figure 2. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 3 V
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE Volts
6
R
ON
0
0
0.5
0.5
1
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
1.5
2
2.5
3
3.5
4
4.5
5
+85 C
40 C
+25 C
V
DD
= +5V
Figure 3. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 5 V
FREQUENCY Hz
10m
I
SUPPLY
A
1m
100
10
1
100n
10n
1n
100
1k
10k
100k
1M
10M
V
DD
= +5V
T
A
= +25 C
Figure 4. Supply Current vs. Input Switching Frequency
V
DD
=
+5V
T
A
=
+25 C
FREQUENCY
H
Z
0
10M
10k
4
2
100k
1M
100M
6
ON
RESPONSE
dB
Figure 5. On Response vs. Frequency
FREQUENCY Hz
120
OFF ISOLATION dB
10k
100k
1M
10M
100M
110
100
90
130
80
70
60
50
40
30
V
DD
=
+5V,
+3V
T
A
=
+25 C
Figure 6. Off Isolation vs. Frequency
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