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REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
ADG779
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 2001
CMOS 1.8 V to 5.5 V, 2.5
SPDT Switch/2:1 Mux In Tiny SC70 Package
FUNCTIONAL BLOCK DIAGRAM
IN
ADG779
S2
S1
D
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
FEATURES
1.8 V to 5.5 V Single Supply
2.5 On Resistance
0.75
On-Resistance Flatness
3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times
t
ON
20 ns
t
OFF
6 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS-Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submi-
cron process that provides low power dissipation yet gives
high switching speed, low on resistance and low leakage
currents.
The ADG779 operates from a single supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, 3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1. Tiny 6-Lead SC70 Package.
2. 1.8 V to 5.5 V Single Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
3. Very Low R
ON
(5
max at 5 V, 10 max at 3 V). At 1.8 V
operation, R
ON
is typically 40
over the temperature range.
4. On-Resistance Flatness (R
FLAT(ON)
) (0.75
typ).
5. 3 dB Bandwidth >200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. 14 ns Switching Times.
2
REV. 0
ADG779SPECIFICATIONS
1
B Version
40 C to
Parameter
25 C
+85 C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance (R
ON
)
2 .5
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA,
5
6
max
Test Circuit 1
On Resistance Match Between
Channels (
R
ON
)
0.1
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
0.8
max
On-Resistance Flatness (R
FLAT(ON)
)
0.75
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
1.2
max
LEAKAGE CURRENTS
2
V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF)
0.01
0.05
nA typ
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V,
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.01
0.05
nA typ
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V,
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4
V min
Input Low Voltage, V
INL
0.8
V max
Input Current
I
INL
or I
INH
0.005
A typ
V
IN
= V
INL
or V
INH
0.1
A max
DYNAMIC CHARACTERISTICS
2
t
ON
14
ns typ
R
L
= 300
, C
L
= 35 pF
20
ns max
V
S
= 3 V, Test Circuit 4
t
OFF
3
ns typ
R
L
= 300
, C
L
= 35 pF
6
ns max
V
S
= 3 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
8
ns typ
R
L
= 300
, C
L
= 35 pF,
1
ns min
V
S1
= V
S2
= 3 V, Test Circuit 5
Off Isolation
67
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
87
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
Channel-to-Channel Crosstalk
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Bandwidth 3 dB
200
MHz typ
R
L
= 50
, C
L
= 5 pF, Test Circuit 8
C
S
(OFF)
7
pF typ
f = 1 MHz
C
D
, C
S
(ON)
2 7
pF typ
f = 1 MHz
POWER REQUIREMENTS
V
DD
= 5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001
A typ
1.0
A max
NOTES
1
Temperature ranges are as follows: B Version, 40
C to +85C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 5 V 10%, GND = 0 V)
3
REV. 0
ADG779
B Version
40 C to
Parameter
25 C
+85 C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance (R
ON
)
6
7
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA,
10
max
Test Circuit 1
On Resistance Match Between
Channels (
R
ON
)
0.1
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
0.8
max
On-Resistance Flatness (R
FLAT(ON)
)
2.5
typ
V
S
= 0 V to V
DD
, I
S
= 10 mA
LEAKAGE CURRENTS
2
V
DD
= 3.3 V
Source OFF Leakage I
S
(OFF)
0.01
0.05
nA typ
V
S
= 3 V/1 V, V
D
= 1 V/3 V,
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.01
0.05
nA typ
V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V,
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.8
V max
Input Current
I
INL
or I
INH
0.005
A typ
V
IN
= V
INL
or V
INH
0.1
A max
DYNAMIC CHARACTERISTICS
2
t
ON
16
ns typ
R
L
= 300
, C
L
= 35 pF
24
ns max
V
S
= 2 V, Test Circuit 4
t
OFF
4
ns typ
R
L
= 300
, C
L
= 35 pF
7
ns max
V
S
= 2 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
8
ns typ
R
L
= 300
, C
L
= 35 pF
1
ns min
V
S1
= V
S2
= 2 V, Test Circuit 5
Off Isolation
67
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
87
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
Channel-to-Channel Crosstalk
62
dB typ
R
L
= 50
, C
L
= 5 pF, f = 10 MHz
82
dB typ
R
L
= 50
, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Bandwidth 3 dB
200
MHz typ
R
L
= 50
, C
L
= 5 pF, Test Circuit 8
C
S
(OFF)
7
pF typ
f = 1 MHz
C
D
, C
S
(ON)
27
pF typ
f = 1 MHz
POWER REQUIREMENTS
V
DD
= 3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001
A typ
1.0
A max
NOTES
1
Temperature ranges are as follows: B Version, 40
C to +85C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 3 V 10%, GND = 0 V)
SPECIFICATIONS
1
ADG779
4
REV. 0
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
Branding Information
*
ADG779BKS
40
C to +85C
SC70 (Plastic Surface Mount)
KS-6
SKB
*Brand = Brand on these packages is limited to three characters due to space constraints.
PIN CONFIGURATION
6-Lead SC70
TOP VIEW
(Not to Scale)
6
5
4
1
2
3
IN
V
DD
GND
S2
D
S1
ADG779
Table I. Truth Table
ADG779 IN
Switch S1
Switch S2
0
ON
OFF
1
OFF
ON
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG779 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . 0.3 V to V
DD
+ 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . 40
C to +85C
Storage Temperature Range . . . . . . . . . . . . . 65
C to +150C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
C
SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332
C/W
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
V
DD
Most Positive Power Supply Potential.
GND
Ground (0 V) Reference.
S
Source Terminal. May be an input or output.
D
Drain Terminal. May be an input or output.
IN
Logic Control Input.
R
ON
Ohmic resistance between D and S.
R
ON
On resistance match between any two channels
i.e., R
ON
max R
ON
min.
R
FLAT(ON)
Flatness is defined as the difference between the
maximum and minimum value of on resistance as
measured over the specified analog signal range.
I
S
(OFF)
Source Leakage Current with the switch "OFF."
I
D
, I
S
(ON)
Channel Leakage Current with the switch "ON."
V
D
(V
S
)
Analog Voltage on Terminals D, S.
C
S
(OFF)
"OFF" Switch Source Capacitance.
C
D
, C
S
(ON) "ON" Switch Capacitance.
t
ON
Delay between applying the digital control input
and the output switching on.
t
OFF
Delay between applying the digital control input
and the output switching off.
t
D
"OFF" time or "ON" time measured between the
90% points of both switches, when switching
from one address state to another.
Crosstalk
A measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through
an "OFF" switch.
On Response The frequency response of the "ON" switch.
On Loss
The loss due to the "ON" resistance of the switch.
ADG779
5
REV. 0
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE V
5.0
0
0
5.0
0.5
R
ON
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
4.5
4.0
3.5
3.0
2.5
2.0
V
DD
= 2.7V
V
DD
= 3.0V
V
DD
= 4.5V
V
DD
= 5.0V
1.5
1.0
0.5
T
A
= 25 C
6.0
5.5
TPC 1. On Resistance as a Function of V
D
(V
S
) Single
Supplies
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE V
5.0
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5.5
6.0
0
3.0
0.5
R
ON
1.0
1.5
2.0
2.5
V
DD
= 3V
+85 C
+25 C
40 C
TPC 2. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 3 V
V
D
OR V
S
DRAIN OR SOURCE VOLTAGE V
0
0
5.0
0.5
R
ON
1.0
1.5
2.0
2.5
3.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
3.5
4.0
4.5
V
DD
= 5V
5.0
4.5
4.0
+85 C
40 C
+25 C
6.0
5.5
TPC 3. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 5 V
Typical Performance Characteristics
TEMPERATURE C
0.15
0.10
0.05
0
90
10
CURRENT
nA
20
30
40
50
60
70
80
0.05
0
I
D
, I
S
(ON)
I
S
(OFF)
V
DD
= 5V
V
D
= 4.5V/1V
V
S
= 1V/4.5V
TPC 4. Leakage Currents as a Function of Temperature
TEMPERATURE C
0.15
0.10
0.05
0
90
10
CURRENT
nA
20
30
40
50
60
70
80
0.05
0
I
D
, I
S
(ON)
I
S
(OFF)
V
DD
= 3V
V
D
= 3V/1V
V
S
= 1V/3V
TPC 5. Leakage Currents as a Function of Temperature
FREQUENCY Hz
1n
10
I
SUPPLY
A
100
1k
10k
100k
1M
10M
100M
10n
100n
1
10
100
1m
10m
1
V
DD
= 5V
TPC 6. Supply Current vs. Input Switching Frequency
ADG779
6
REV. 0
FREQUENCY Hz
120
OFF ISOLATION
dB
10k
100k
1M
10M
100M
110
100
90
130
80
70
60
50
40
30
V
DD
= 5V, 3V
0
TPC 7. Off Isolation vs. Frequency
FREQUENCY Hz
30
10k
CROSSTALK
dB
40
50
60
70
80
90
100
110
120
130
100k
1M
10M
100M
0
V
DD
= 5V, 3V
TPC 8. Crosstalk vs. Frequency
V
DD
= 5V
FREQUENCY Hz
0
10M
10k
ON RESPONSE
dB
4
2
100k
1M
100M
6
TPC 9. On Response vs. Frequency
ADG779
7
REV. 0
V
S
V
OUT
R
L
50
50
NETWORK
ANALYZER
IN
GND
V
IN
S
D
50
OFF ISOLATION = 20 LOG
V
OUT
V
S
V
DD
0.1 F
V
DD
Test Circuit 6. Off Isolation
CHANNEL-TO-CHANNEL
CROSSTALK = 20
LOG
V
OUT
V
S
GND
V
DD
0.1 F
V
DD
S1
D
R
50
S2
IN
V
S
50
V
OUT
R
L
50
NETWORK
ANALYZER
Test Circuit 7. Channel-to-Channel Crosstalk
V
S
V
OUT
50
R
L
50
NETWORK
ANALYZER
IN
GND
V
IN
S
D
INSERTION LOSS = 20 LOG
V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
V
DD
0.1 F
V
DD
Test Circuit 8. Bandwidth
I
DS
V1
S
D
V
S
R
ON
= V1/I
DS
Test Circuit 1. On Resistance
Test Circuits
S
D
V
S
A
A
V
D
I
S
(OFF)
I
D
(OFF)
Test Circuit 2. Off Leakage
S
D
V
S
A
V
D
I
D
(ON)
Test Circuit 3. On Leakage
0.1 F
V
DD
V
S
IN
S
D
V
DD
GND
R
L
300
C
L
35pF
V
OUT
50%
50%
90%
90%
V
IN
V
OUT
t
ON
t
OFF
Test Circuit 4. Switching Times
0.1 F
V
DD
V
S1
IN
S1
D
V
DD
GND
R
L2
300
C
L2
35pF
V
OUT
S2
V
S2
D2
V
IN
50%
50%
V
IN
V
OUT
t
D
t
D
50%
50%
0V
0V
Test Circuit 5. Break-Before-Make Time Delay, t
D
C02491
1.5
7/01(0)
PRINTED IN U.S.A.
8
6-Lead Plastic Surface Mount Package (SC70)
(KS-6)
0.007 (0.18)
0.004 (0.10)
0.012 (0.30)
0.004 (0.10)
8
0
0.012 (0.30)
0.006 (0.15)
0.004 (0.10)
0.000 (0.00)
0.039 (1.00)
0.031 (0.80)
SEATING
PLANE
0.043 (1.10)
0.031 (0.80)
3
5
4
2
6
1
0.087 (2.20)
0.071 (1.80)
PIN 1
0.094 (2.40)
0.071 (1.80)
0.026 (0.65) BSC
0.053 (1.35)
0.045 (1.15)
0.051 (1.30)
BSC
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
REV. 0
ADG779
Document Outline
- Specifications
- Pinout
- Package drawings
- Ordering Guide
- Features
- Applications
- Product Description
- Absolute Maximum Ratings
- Functional Block Diagram
- Typical Characteristics
- CAUTION
- DIAGRAMS
- Test Circuit 1. On Resistance
- Test Circuit 2. Off Leakage
- Test Circuit 3. On Leakage
- Test Circuit 4. Switching Times
- Test Circuit 5. Break-Before-Make Time Delay, tD
- Test Circuit 6. Off Isolation
- Test Circuit 7. Channel-to-Channel Crosstalk
- Test Circuit 8. Bandwidth
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