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Электронный компонент: ADR431AR

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Ultralow Noise XFET
Voltage References
with Current Sink and Source Capability
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
2004 Analog Devices, Inc. All rights reserved.
FEATURES
Low noise (0.1 Hz to 10 Hz): 3.5 V p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
A Grade: 10 ppm/C max
B Grade: 3 ppm/C max
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
ADR439: 6.5 V to 18 V
High output current: +30 mA/-20 mA
Wide temperature range:
-40C to +125C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments
PIN CONFIGURATIONS
NC = NO CONNECT
ADR43x
TOP VIEW
(Not to Scale)
TP
1
V
IN
2
NC
3
GND
4
TP
NC
V
OUT
TRIM
8
7
6
5
04500-0-001
Figure 1. 8-Lead MSOP
(RM Suffix)
NC = NO CONNECT
ADR43x
TOP VIEW
(Not to Scale)
TP
1
V
IN
2
NC
3
GND
4
TP
NC
V
OUT
TRIM
8
7
6
5
04500-0-041
Figure 2. 8-Lead SOIC
(R Suffix)
GENERAL DESCRIPTION
The ADR43x series is a family of XFET voltage references
featuring low noise, high accuracy, and low temperature drift
performance. Using ADI's patented temperature drift curvature
correction and XFET (eXtra implanted junction FET) technology,
the ADR43x's voltage change versus temperature nonlinearity is
minimized.
The XFET references operate at lower current (800 A) and
supply headroom (2 V) than buried-Zener references. Buried-
Zener references require more than 5 V headroom for operations.
The ADR43x XFET references are the only low noise solutions
for 5 V systems.
The ADR43x series has the capability to source up to 30 mA
and sink up to 20 mA of output current. It also comes with a
TRIM terminal to adjust the output voltage over a 0.5% range
without compromising performance. The ADR43x is available
in the 8-lead mini SOIC and 8-lead SOIC packages.
All versions are specified over the extended industrial tempera-
ture range (-40C to +125C).
Table 1. Selection Guide
Model
V
OUT
(V)
Accuracy
(mV)
Temperature Coefficient
(ppm/C)
ADR430B
2.048
1
3
ADR430A
2.048
3
10
ADR431B
2.500
1
3
ADR431A
2.500
3
10
ADR433B
3.000
1.4
3
ADR433A
3.000
4
10
ADR434B
4.096
1.5
3
ADR434A
4.096
5
10
ADR435B
5.000
2
3
ADR435A
5.000
6
10
ADR439B
4.500
2
3
ADR439A
4.500
5.4
10
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. B | Page 2 of 24
TABLE OF CONTENTS
Specifications..................................................................................... 3
ADR430 Electrical Characteristics............................................. 3
ADR431 Electrical Characteristics............................................. 4
ADR433 Electrical Characteristics............................................. 5
ADR434 Electrical Characteristics............................................. 6
ADR435 Electrical Characteristics............................................. 7
ADR439 Electrical Characteristics............................................. 8
Absolute Maximum Ratings............................................................ 9
Package Type ................................................................................. 9
ESD Caution.................................................................................. 9
Typical Performance Characteristics ........................................... 10
Theory of Operation ...................................................................... 15
Basic Voltage Reference Connections...................................... 15
Noise Performance ..................................................................... 15
Turn-On Time ............................................................................ 15
Applications..................................................................................... 16
Output Adjustment .................................................................... 16
Reference for Converters in Optical Network Control
Circuits......................................................................................... 16
Negative Precision Reference without Precision Resistors ... 16
High Voltage Floating Current Source .................................... 17
Kelvin Connections.................................................................... 17
Dual Polarity References ........................................................... 17
Programmable Current Source ................................................ 18
Programmable DAC Reference Voltage .................................. 18
Precision Voltage Reference for Data Converters.................. 19
Precision Boosted Output Regulator ....................................... 19
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 21
REVISION HISTORY
9/04--Data Sheet Changed from Rev. A to Rev. B
Added New Grade ..............................................................Universal
Changes to Specifications ................................................................ 3
Replaced Figure 3, Figure 4, Figure 5........................................... 10
Updated Ordering Guide............................................................... 21
6/04--Data Sheet Changed from Rev. 0 to Rev. A
Changes to Format .............................................................Universal
Changes to the Ordering Guide.................................................... 20
12/03--Revision 0: Initial Version
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. B | Page 3 of 24
SPECIFICATIONS
ADR430 ELECTRICAL CHARACTERISTICS
V
IN
= 4.1 V to 18 V, I
LOAD
= 0 mA, T
A
= 25C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output
Voltage
B Grade
V
O
2.047 2.048 2.049 V
A Grade
V
O
2.045 2.048 2.051 V
Initial
Accuracy
B Grade
V
OERR
1
mV
B Grade
V
OERR
0.05
%
A Grade
V
OERR
3
mV
A Grade
V
OERR
0.15
%
Temperature
Coefficient
SOIC-8 (B Grade)
TCV
O
-40C < T
A
< +125C
1
3
ppm/C
SOIC-8 (A Grade)
TCV
O
-40C < T
A
< +125C
2
10
MSOP-8 TCV
O
-40C < T
A
< +125C
2
10
ppm/C
Line Regulation
V
O
/V
IN
V
IN
= 4.1 V to 18 V
-40C < T
A
< +125C
5
20
ppm/V
Load Regulation
V
O
/I
LOAD
I
LOAD
= 0 mA to 10 mA, V
IN
= 5.0 V
-40C < T
A
< +125C
15
ppm/mA
I
LOAD
= -10 mA to 0 mA, V
IN
= 5.0 V
-40C < T
A
< +125C
15
ppm/mA
Quiescent Current
I
IN
No load, -40C < T
A
< +125C
560
800
A
Voltage Noise
e
N
p-p
0.1 Hz to 10.0 Hz
3.5
V p-p
Voltage Noise Density
e
N
1 kHz
60
nVHz
Turn-On Settling Time
t
R
C
IN
= 0
10
s
Long-Term Stability
1
V
O
1,000
h
40
ppm
Output Voltage Hysteresis
V
O_HYS
20
ppm
Ripple Rejection Ratio
RRR
f
IN
= 10 kHz
70
dB
Short Circuit to GND
I
SC
40
mA
Supply Voltage Operating Range
V
IN
4.1
18
V
Supply Voltage Headroom
V
IN
- V
O
2
V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. B | Page 4 of 24
ADR431 ELECTRICAL CHARACTERISTICS
V
IN
= 4.5 V to 18 V, I
LOAD
= 0 mA, T
A
= 25C, unless otherwise noted.
Table 3.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output
Voltage
B Grade
V
O
2.499 2.500 2.501 V
A Grade
V
O
2.497 2.500 2.503 V
Initial Accuracy
B Grade
V
OERR
1
mV
B Grade
V
OERR
0.04
%
A Grade
V
OERR
3
mV
A Grade
V
OERR
0.13
%
Temperature Coefficient
SOIC-8 (B Grade)
TCV
O
-40C < T
A
< +125C
1
3
ppm/C
SOIC-8 (A Grade)
TCV
O
-40C < T
A
< +125C
2
10
ppm/C
MSOP-8 TCV
O
-40C < T
A
< +125C
2
10
ppm/C
Line Regulation
V
O
/V
IN
V
IN
= 4.5 V to 18 V
-40C < T
A
< +125C
5
20
ppm/V
Load Regulation
V
O
/I
LOAD
I
LOAD
= 0 mA to 10 mA, V
IN
= 5.0 V
-40C < T
A
< +125C
15
ppm/mA
I
LOAD
= -10 mA to 0 mA, V
IN
= 5.0 V
-40C < T
A
< +125C
15
ppm/mA
Quiescent Current
I
IN
No load, -40C < T
A
< +125C
580
800
A
Voltage Noise
e
N
p-p
0.1 Hz to 10.0 Hz
3.5
V p-p
Voltage Noise Density
e
N
1 kHz
80
nVHz
Turn-On Settling Time
t
R
C
IN
= 0
10
s
Long-Term Stability
1
V
O
1,000 h
40
ppm
Output Voltage Hysteresis
V
O_HYS
20
ppm
Ripple Rejection Ratio
RRR
f
IN
= 10 kHz
-70
dB
Short Circuit to GND
I
SC
40
mA
Supply Voltage Operating Range
V
IN
4.5
18
V
Supply Voltage Headroom
V
IN
V
O
2
V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. B | Page 5 of 24
ADR433 ELECTRICAL CHARACTERISTICS
V
IN
= 5 V to 18 V, I
LOAD
= 0 mA , T
A
= 25C, unless otherwise noted.
Table 4.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output
Voltage
B Grade
V
O
2.9985 3.000 3.0015 V
A Grade
V
O
2.996 3.000
3.004 V
Initial Accuracy
B Grade
V
OERR
1.5
mV
B Grade
V
OERR
0.05
%
A Grade
V
OERR
4
mV
A Grade
V
OERR
0.13
%
Temperature Coefficient
TCV
O
SOIC-8 (B Grade)
-40C < T
A
< +125C
1
3
ppm/C
SOIC-8 (A Grade)
-40C < T
A
< +125C
2
10
ppm/C
MSOP-8
-40C < T
A
< +125C
2
10
ppm/C
Line Regulation
V
O
/V
IN
V
IN
= 5 V to 18 V
-40C < T
A
< +125C
5
20
ppm/V
Load Regulation
V
O
/I
LOAD
I
LOAD
= 0 mA to 10 mA, V
IN
= 6 V
-40C < T
A
< +125C
15
ppm/mA
I
LOAD
= -10 mA to 0 mA, V
IN
= 6 V
-40C < T
A
< +125C
15
ppm/mA
Quiescent Current
I
IN
No load, -40C < T
A
< +125C
590
800
A
Voltage Noise
e
N
p-p
0.1 Hz to 10.0 Hz
3.75
V p-p
Voltage Noise Density
e
N
1 kHz
90
nVHz
Turn-On Settling Time
t
R
C
IN
= 0
10
s
Long-Term Stability
1
V
O
1,000 h
40
ppm
Output Voltage Hysteresis
V
O_HYS
20
ppm
Ripple Rejection Ratio
RRR
f
IN
= 10 kHz
-70
dB
Short Circuit to GND
I
SC
40
mA
Supply Voltage Operating Range
V
IN
5
18
V
Supply Voltage Headroom
V
IN
- V
O
2
V
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.