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Электронный компонент: AT-31011

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4-33
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Description
Hewlett-Packard's AT-31011 and
AT-31033 are high performance
NPN bipolar transistors that have
been optimized for operation at
low voltages, making them ideal
for use in battery powered
applications in wireless markets.
The AT-31033 uses the 3 lead
SOT-23, while the AT-31011 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standards
compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a mul-
tiplicity of tasks. The 10 emitter
finger interdigitated geometry
yields an extremely fast transistor
with low operating currents and
reasonable impedances.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.9 GHz, and 2.4 GHz
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB G
A
AT-31033: 0.9 dB NF, 11 dB G
A
Characterized for End-Of-
Life Battery Use (2.7 V)
SOT-143 SMT Plastic
Package
Tape-And-Reel Packaging
Option Available
[1]
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Applications
include cellular and PCS handsets
as well as Industrial-Scientific-
Medical systems. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 11 dB or more
associated gain at a 2.7 V, 1 mA
bias. Moderate output power
capability (+9 dBm P
1dB
) coupled
with an excellent noise figure
yields high dynamic range for a
microcurrent device. High gain
capability at 1 V, 1 mA makes these
devices a good fit for 900 MHz
pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard's
10 GHz f
T
, 30 GHz f
max
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
AT-31011
AT-31033
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
310
310
SOT-23 (AT-31033)
SOT-143 (AT-31011)
Outline Drawing
Note:
1. Refer to "Tape-and-Reel Packaging for
Semiconductor Devices"
5965-8919E
4-34
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum
[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
11
V
CEO
Collector-Emitter Voltage
V
5.5
I
C
Collector Current
mA
16
P
T
Power Dissipation
[2,3]
mW
150
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
Mounting Surface
= 25
C.
3. Derate at 1.82 mW/
C for T
C
> 67.5
C.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
Electrical Specifications, T
A
= 25
C
AT-31011
AT-31033
Symbol
Parameters and Test Conditions
Units
Min
Typ
Max
Min
Typ
Max
NF
Noise Figure
V
CE
= 2.7 V, I
C
= 1 mA
f = 0.9 GHz
dB
0.9
[1]
1.2
[1]
0.9
[2]
1.2
[2]
G
A
Associated Gain
V
CE
= 2.7 V, I
C
= 1 mA
f = 0.9 GHz
dB
11
[1]
13
[1]
9
[2]
11
[2]
h
FE
Forward Current
V
CE
= 2.7 V
-
70
300
70
300
Transfer Ratio
I
C
= 1 mA
I
CBO
Collector Cutoff Current
V
CB
= 3 V
A
0.05
0.2
0.05
0.2
I
EBO
Emitter Cutoff Current
V
EB
= 1 V
A
0.1
1.5
0.1
1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
1000 pF
V
BB
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
W = 30 L = 100
W = 10 L = 1860
1000 pF
V
CC
25
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
= 4.8)
DIMENSIONS IN MILS
Thermal Resistance
[2]
:
jc
= 550
C/W
4-35
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0
1.5
10
4
2
0.5
2.5
6
2.0
8
10 mA
5 mA
2 mA
2 mA
5 mA
10 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
10 mA
1 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
10 mA
Characterization Information, T
A
= 25
AT-31011 AT-31033
Symbol
Parameters and Test Conditions
Units
Typ
Typ
P
1dB
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA
f = 0.9 GHz
dBm
9
9
G
1dB
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA
f = 0.9 GHz
dB
15
13
IP
3
Output Third Order Intercept Point,
V
CE
= 2.7 V, I
C
= 10 mA (opt tuning)
f = 0.9 GHz
dBm
20
20
|S
21
|
E
2
Gain in 50
System; V
CE
= 2.7 V, I
C
= 1 mA
f = 0.9 GHz
dB
10
9
C
CB
Collector-Base Capacitance
V
CB
= 3V, f = 1 MHz
pF
0.04
0.04
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 2.7 V.
Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier
NF
[1]
vs. Frequency and Current at
V
CE
= 2.7 V.
C
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1
1.5
2.5
1
0.5
0.5
2.5
1.5
2
2
1 mA
10 mA
AMPLIFIER NF
NF MIN.
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
10 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
16
4
0.5
2.5
8
2.0
12
2 mA
5 mA
10 mA
4-36
AT-31011, AT-31033 Typical Performance
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0
1.5
15
6
3
0.5
2.5
9
2.0
12
10 mA
2 mA
5 mA
2 mA
5 mA
10 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
10 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
10 mA
Figure 8. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 5 V.
Figure 9. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
Figure 10. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
P 1dB (dBm)
0
-4
FREQUENCY (GHz)
1.0
1.5
4
-2
0.5
2.5
0
2.0
2
5 mA
2 mA
Figure 13. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
Figure 12. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
Figure 11. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 1 V.
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
Figure 14. AT-31011 Noise Figure and
Associated Gain at V
CE
= 2.7 V,
I
C
= 1 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
Figure 16. AT-31011 and AT-31033
Intermodulation Products vs. Output
Power at V
CE
= 2.7 V, I
C
= 10 mA,
900 MHz with Optimal Tuning.
Figure 15. AT-31033 Noise Figure and
Associated Gain at V
CE
= 2.7 V,
I
C
= 1 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
Ga (dBm)
-50
0
TEMPERATURE (C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
Ga (dBm)
-50
0
TEMPERATURE (C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
IM3 (dBc)
-9
-80
POWER PER TONE (dBm)
-3
0
0
-60
-6
6
-40
3
-20
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
4-37
AT-31033 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 1 V, I
C
= 1 mA
OPT
Freq
F
min
[1]
R
n
GHz
dB
Mag
Ang
0.5
[2]
0.5
0.90
12
0.70
0.9
0.6
0.82
28
0.60
1.8
1.1
0.57
68
0.38
2.4
1.6
0.41
100
0.22
Notes:
1. Matching constraints may make F
min
values associated with high |
OPT
| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31011 Typical Scattering Parameters,
V
CE
= 1 V, I
C
= 1 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.95
-8
11.12
3.60
174
-37.91
0.01
85
0.999
-3
0.5
0.92
-34
10.58
3.38
150
-24.67
0.06
68
0.94
-15
0.9
0.81
-60
9.74
3.07
130
-20.67
0.09
53
0.89
-25
1.0
0.79
-66
9.33
2.93
125
-20.03
0.10
50
0.88
-27
1.5
0.66
-94
8.02
2.52
104
-18.34
0.12
36
0.80
-36
1.8
0.60
-110
7.18
2.28
93
-17.95
0.13
30
0.76
-40
2.0
0.57
-119
6.76
2.18
87
-17.73
0.13
27
0.74
-42
2.4
0.51
-139
5.56
1.90
74
-17.69
0.13
22
0.71
-46
3.0
0.45
-167
4.22
1.63
57
-17.95
0.13
19
0.67
-51
4.0
0.45
153
2.30
1.30
36
-18.33
0.12
22
0.64
-62
5.0
0.49
120
0.73
1.09
17
-17.33
0.14
32
0.62
-72
AT-31011 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 1 V, I
C
= 1 mA
OPT
Freq
F
min
[1]
R
n
GHz
dB
Mag
Ang
0.5
[2]
0.5
0.90
13
0.85
0.9
0.6
0.85
29
0.73
1.8
1.1
0.68
67
0.46
2.4
1.6
0.55
98
0.28
Notes:
1. Matching constraints may make F
min
values associated with high |
OPT
| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters,
V
CE
= 1 V, I
C
= 1 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.94
-7
11.16
3.61
173
-35.95
0.02
85
0.999
-3
0.5
0.87
-34
10.37
3.30
144
-22.84
0.07
68
0.92
-17
0.9
0.70
-58
9.17
2.87
121
-19.06
0.11
56
0.85
-27
1.0
0.66
-64
8.69
2.72
115
-18.49
0.12
53
0.83
-29
1.5
0.46
-90
7.11
2.27
92
-16.94
0.14
45
0.74
-37
1.8
0.36
-106
6.16
2.03
81
-16.40
0.15
43
0.70
-40
2.0
0.31
-117
5.66
1.92
74
-16.06
0.16
42
0.68
-42
2.4
0.22
-143
4.48
1.67
62
-15.50
0.17
42
0.66
-45
3.0
0.16
166
3.19
1.44
46
-14.34
0.19
44
0.63
-50
4.0
0.23
101
1.39
1.17
25
-11.85
0.26
46
0.60
-62
5.0
0.33
67
0.05
1.01
9
-9.11
0.35
41
0.56
-77
GAIN (dB)
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
Figure 17. AT-31011 Gains vs.
Frequency at V
CE
= 1 V, I
C
= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
MSG
Figure 18. AT-31033 Gains vs.
Frequency at V
CE
= 1 V, I
C
= 1 mA.