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Электронный компонент: AT-32011

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4-53
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB G
A
AT-32033: 1 dB NF, 12.5 dB G
A
Characterized for End-Of-
Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT
Plastic Packages
Tape-And-Reel Packaging
Option Available
[1]
Description
Hewlett Packard's AT-32011 and
AT-32033 are high performance
NPN bipolar transistors that have
been optimized for maximum f
t
at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-32033 uses the
3 lead SOT-23, while the AT-320 11
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20 emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett Packard's
10 GHz f
t
, 30 GHz f
MAX
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
AT-32011
AT-32033
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
320
320
SOT-23 (AT-32033)
SOT-143 (AT-32011)
Note:
1. Refer to "Tape-and-Reel Packaging for Semiconductor Devices."
Outline Drawing
5965-8920E
4-54
Electrical Specifications, T
A
= 25
C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
NF
Noise Figure
V
CE
= 2.7 V, I
C
= 2 mA
f = 0.9 GHz
dB
1.0
[1]
1.3
[1]
1.0
[2]
1.3
[2]
G
A
Associated Gain
V
CE
= 2.7 V, I
C
= 2 mA
f = 0.9 GHz
dB
12.5
[1]
14
[1]
11
[2]
12.5
[2]
h
FE
Forward Current Transfer Ratio
V
CE
= 2.7 V, I
C
= 2 mA
70
300
70
300
I
CBO
Collector Cutoff Current
V
CB
= 3 V
A
0.2
0.2
I
EBO
Emitter Cutoff Current
V
EB
= 1 V
A
1.5
1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
AT-32011, AT-32033 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
11
V
CEO
Collector-Emitter Voltage
V
5.5
I
C
Collector Current
mA
32
P
T
Power Dissipation
[2, 3]
mW
200
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
Thermal Resistance
[2]
:
jc
= 550
C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T
Mounting Surface
= 25
C.
3. Derate at 1.82 mW/
C for T
C
> 40
C.
1000 pF
VBB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
W = 10 L = 1870
1000 pF
VCC
W = 10
CKT A: L = 105
CKT B: L = 850
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
= 4.8)
RF IN
W = 30
L = 60
CKT A: 25
CKT B: 5
RF OUT
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
4-55
Characterization Information, T
A
= 25
C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units
Typ.
Typ.
P
1dB
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dBm
13
13
G
1dB
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dB
16.5
15
IP
3
Output Third Order Intercept Point (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dBm
24
24
|S
21
|
E
2
Gain in 50
System
V
CE
= 2.7 V, I
C
= 2 mA
f = 0.9 GHz
dB
13
11.5
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1
1.5
2
1
0.5
0.5
2.5
1.5
2
1 mA
2 mA
5 mA
10 mA
20 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 2.7 V.
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
4-56
Ga (dBm)
-50
0
TEMPERATURE (C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
Ga (dBm)
-50
0
TEMPERATURE (C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
IP3 (dBm)
0
0
FREQUENCY (MHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
2 mA
5 mA
10 mA
20 mA
Figure 14. AT-32011 Noise Figure and
Associated Gain at V
CE
= 2 .7 V,
I
C
= 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 15. AT-32033 Noise Figure and
Associated Gain at V
CE
= 2 .7 V,
I
C
= 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at V
CE
= 2 .7 V, with Optimal
Tuning.
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0
1.5
10
0
-2.5
0.5
2.5
2.5
2.0
7.5
2 mA
5 mA
5
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 1 V.
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 5 V.
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011, AT-32033 Typical Performance
4-57
AT-32011 Typical Scattering Parameters,
Common Emitter, Zo = 50
V
CE
= 1 V, I
C
= 1 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.97
-11
11.09
3.59
172
-33.55
0.021
83
0.99
-5
0.5
0.88
-52
10.13
3.21
141
-20.85
0.091
59
0.92
-21
0.9
0.78
-86
8.67
2.71
117
-17.62
0.132
41
0.82
-32
1.0
0.75
-94
8.35
2.62
112
-17.27
0.137
37
0.79
-35
1.5
0.67
-127
6.35
2.08
89
-16.30
0.153
23
0.71
-45
1.8
0.63
-144
5.25
1.83
77
-16.28
0.154
16
0.67
-50
2.0
0.61
-155
4.75
1.73
70
-16.42
0.151
13
0.65
-53
2.4
0.59
-175
3.48
1.49
57
-16.86
0.144
9
0.62
-59
3.0
0.59
157
1.77
1.23
40
-17.89
0.128
8
0.61
-68
4.0
0.63
120
-0.39
0.96
18
-18.40
0.120
23
0.59
-84
5.0
0.69
94
-2.39
0.76
0
-15.60
0.166
35
0.59
-104
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50
, 1 V, I
C
= 1 mA
Freq.
F
min
R
n
GHz
dB
Mag
Ang
0.5
[1]
0.42
0.87
25
0.48
0.9
0.71
0.73
55
0.34
1.8
1.37
0.42
143
0.11
2.4
1.80
0.50
-162
0.07
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
opt
AT-32033 Typical Scattering Parameters,
Common Emitter, Zo = 50
V
CE
= 1 V, I
C
= 1 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.97
-11
11.09
3.58
170
-32.75
0.023
83
0.99
-5
0.5
0.81
-52
9.88
3.12
134
-20.30
0.097
60
0.90
-22
0.9
0.61
-87
8.07
2.53
107
-17.57
0.132
46
0.78
-33
1.0
0.56
-95
7.65
2.41
101
-17.24
0.137
44
0.76
-35
1.5
0.41
-136
5.43
1.87
77
-16.61
0.148
39
0.68
-42
1.8
0.36
-160
4.30
1.64
66
-16.36
0.152
41
0.65
-46
2.0
0.34
-177
3.74
1.54
59
-16.05
0.158
44
0.63
-49
2.4
0.34
154
2.49
1.33
47
-15.10
0.176
49
0.61
-55
3.0
0.38
119
0.96
1.12
32
-12.77
0.230
55
0.59
-65
4.0
0.46
81
-0.84
0.91
15
-8.68
0.368
50
0.56
-87
5.0
0.51
56
-1.90
0.80
5
-5.68
0.520
37
0.51
-114
GAIN (dB)
0
-5
FREQUENCY (GHz)
2
3
25
1
5
5
4
15
MSG
MAG
S21
MSG
Figure 18. AT-32033 Gains vs.
Frequency at V
CE
= 1 V, I
C
= 1 mA.
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50
, 1 V, I
C
= 1 mA
Freq.
F
min
R
n
GHz
dB
Mag
Ang
0.5
[1]
0.42
0.79
26
0.44
0.9
0.71
0.70
54
0.35
1.8
1.37
0.53
119
0.18
2.4
1.80
0.55
158
0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
opt
GAIN (dB)
0
-5
FREQUENCY (GHz)
2
3
25
1
5
5
4
15
MSG
MAG
S21
Figure 17. AT-32011 Gains vs.
Frequency at V
CE
= 1 V, I
C
= 1 mA.