Document Outline
- List of Figures
- 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain
- 2. Minimum Noise Figure vs. Frequency and Current at VCE = 2.7 V
- 3. Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V
- 4. Power at 1 dB Gain Compression vs. Frequency at VCE=2.7V and IC = 20 mA
- 5. 1 dB Compressed Gain vs. Frequency at VCE = 2.7 V and IC=20mA
- 6. Third Order Intercept vs. Frequency and Bias at VCE = 2.7 V, with Optimal Tuning
- 7. Gain vs. Frequency at VCE=1V, IC = 1mA
- 8. Gain vs. Frequency at VCE=2.7 V, IC = 2mA
- 9. Gain vs. Frequency at VCE=2.7 V, IC = 5mA
- 10. Gain vs. Frequency at VCE=2.7 V, IC = 20mA
- 11. Gain vs. Frequency at VCE =5 V, IC = 2mA
- 12. Gain vs. Frequency at VCE=5 V, IC = 20mA
- Features
- Surface Mount Package SOT-363 (SC-70)
- Pin Connections and Package Marking
- Description
- AT-32063 Absolute Maximum Ratings [1]
- Electrical Specifications, TA = 25C
- AT-32063 Characterization Information, TA = 25C
- Typical Performance, TA = 25C
- AT-32063 Typical Scattering Parameters
- AT-32063 Typical Noise Parameters
- AT-32063 Typical Scattering Parameters
- AT-32063 Typical Noise Parameters
- AT-32063 Typical Scattering Parameters
- AT-32063 Typical Noise Parameters
- AT-32063 Typical Scattering Parameters
- AT-32063 Typical Noise Parameters
- AT-32063 Typical Scattering Parameters
- AT-32063 Typical Noise Parameters
- AT-32063 Typical Scattering Parameters
- AT-32063 Typical Noise Parameters
- Package Dimensions
- Part Number Ordering Information
- Device Orientation
- Tape Dimensions
4-63
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
1.1 dB NF, 14.5 dB G
A
Characterized for End-of-
Life Battery Use (2.7 V)
SOT-363 (SC-70) Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-32063
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
B
1
1
E
1
2
C
2
3
C
1
6
E
2
5
B
2
4
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard's
10 GHz f
t
, 30 GHz f
max
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metallization in the fabrication of
these devices.
I I
5965-8921E
4-64
AT-32063 Absolute Maximum Ratings
[1]
Absolute
Symbol
Parameter
Units
Maximum
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
11
V
CEO
Collector-Emitter Voltage
V
5.5
I
C
Collector Current
mA
40
P
T
Power Dissipation
[2,3]
mW
150
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
Thermal Resistance
[2]
:
jc
= 370
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
= 25
C.
3. Derate at 2.7 mW/
C for T
C
> 94.5
C.
4. 150 mW per device.
Electrical Specifications, T
A
= 25
C
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
NF
Noise Figure; V
CE
= 2.7 V, I
C
= 5 mA
f = 0.9 GHz
dB
1.1
[2]
1.4
[2]
G
A
Associated Gain; V
CE
= 2.7 V, I
C
= 5 mA
f = 0.9 GHz
dB
12.5
[2]
14.5
[2]
h
FE
Forward Current Transfer Ratio; V
CE
= 2.7 V, I
C
= 5 mA
--
50
270
I
CBO
Collector Cutoff Current; V
CB
= 3 V
A
0.2
I
EBO
Noise Figure; V
EB
= 1 V
A
1.5
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB;
output loss = 0.3 dB.
W = 20
L = 60
W = 10
L = 450
W = 10
L = 100
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (
= 4.3)
DIMENSIONS IN MILS
NOT TO SCALE
50
50
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
4-65
AT-32063 Characterization Information, T
A
= 25
C
Symbol
Parameters and Test Conditions
Units
Typ.
P
1 dB
Power at 1 dB Gain Compression (opt tuning); V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dBm
12
G
1 dB
Gain at 1 dB Gain Compression (opt tuning); V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dB
16
IP
3
Output Third Order Intercept Point (opt tuning); V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
dBm
24
Typical Performance, T
A
= 25
C
0
0.50
1.00
2.00
1.50
0.9
1.8
2.4
NOISE FIGURE
(dB)
FREQUENCY (GHz)
Figure 2. Minimum Noise Figure vs.
Frequency and Current at V
CE
= 2.7 V.
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
0
5.0
10.0
20.0
15.0
0.9
1.8
2.4
Ga
(dB)
FREQUENCY (GHz)
Figure 3. Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
10
11
12
15
13
14
0.9
1.8
2.4
P
1
dB
(dBm)
FREQUENCY (GHz)
Figure 4. Power at 1 dB Gain
Compression vs. Frequency at
V
CE
=2.7V and I
C
= 20 mA.
0
5
10
15
25
20
0
0.5
1.0
1.5
2.0
2.5
IP
3
(dBm)
FREQUENCY (GHz)
Figure 6. Third Order Intercept vs.
Frequency and Bias at V
CE
= 2.7 V, with
Optimal Tuning.
2 mA
5 mA
10 mA
20 mA
0
3
6
18
15
9
12
0.9
1.8
2.4
G1 dB
(dBm)
FREQUENCY (GHz)
Figure 5. 1 dB Compressed Gain vs.
Frequency at V
CE
= 2.7 V and
I
C
=20mA.
4-66
AT-32063 Typical Noise Parameters
Common Emitter, Z
o
= 50
, V
CE
= 1 V, I
C
= 1 mA
Freq.
Fmin
G
A
G
opt
R
n
GHz
dB
dB
Mag.
Ang.
--
0.9
0.71
10.4
0.76
50
0.44
1.8
1.37
8.3
0.60
112
0.24
2.4
1.80
7.2
0.50
155
0.10
-5
0
S21
5
10
15
25
20
0.1
1.1
2.1
3.1
4.1
5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency at
V
CE
=1V, I
C
= 1mA.
MSG
MSG
MAG
0
5
S21
10
15
20
30
25
0.1
1.1
2.1
3.1
4.1
5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency at
V
CE
=2.7 V, I
C
= 2mA.
MSG
MSG
MAG
AT-32063 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, V
CE
= 2.7 V, I
C
= 2 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.96
-12
16.46
6.66
169
-37.32
0.014
82
0.98
-5
0.5
0.77
-55
14.73
5.45
132
-25.13
0.055
59
0.87
-21
0.9
0.59
-87
12.37
4.15
107
-22.42
0.076
48
0.76
-29
1.0
0.55
-93
11.74
3.86
103
-22.07
0.079
47
0.74
-30
1.5
0.42
-121
9.26
2.90
83
-20.79
0.091
44
0.69
-36
1.8
0.37
-135
8.01
2.52
73
-20.13
0.099
45
0.67
-39
2.0
0.34
-145
7.35
2.33
67
-19.67
0.104
46
0.66
-41
2.4
0.29
-164
6.05
2.01
56
-18.68
0.116
48
0.65
-46
3.0
0.26
167
4.54
1.69
41
-16.95
0.142
50
0.64
-53
4.0
0.28
124
2.73
1.37
20
-13.75
0.205
48
0.61
-68
5.0
0.33
94
1.36
1.17
1
-10.70
0.292
41
0.57
-89
AT-32063 Typical Noise Parameters
Common Emitter, Z
o
= 50
, V
CE
= 2.7 V, I
C
= 2 mA
Freq.
Fmin
G
A
G
opt
R
n
GHz
dB
dB
Mag.
Ang.
--
0.9
0.78
14.3
0.65
50
0.31
1.8
1.25
10.7
0.45
105
0.20
2.4
1.57
9.1
0.35
145
0.13
AT-32063 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, V
CE
= 1 V, I
C
= 1 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.98
-11
11.36
3.7
171
-34.77
0.02
83
0.99
-4
0.5
0.86
-50
10.14
3.21
138
-22.02
0.08
59
0.91
-20
0.9
0.72
-82
8.39
2.63
113
-18.97
0.11
43
0.82
-31
1.0
0.69
-88
7.87
2.48
108
-18.61
0.12
41
0.8
-32
1.5
0.58
-119
5.87
1.97
85
-17.8
0.13
31
0.73
-41
1.8
0.52
-134
4.83
1.74
74
-17.72
0.13
28
0.7
-45
2.0
0.49
-145
4.3
1.64
67
-17.69
0.13
28
0.68
-48
2.4
0.45
-165
3.16
1.44
55
-17.68
0.13
30
0.67
-54
3.0
0.41
166
1.84
1.24
39
-16.99
0.14
37
0.64
-63
4.0
0.42
124
0.17
1.02
16
-13.67
0.21
45
0.6
-81
5.0
0.47
93
-1.15
0.88
-2
-9.84
0.32
38
0.54
-107
4-67
AT-32063 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, V
CE
= 2.7 V, I
C
= 5 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.87
-19
23.36
14.72
162
-37.77
0.013
80
0.96
-9
0.5
0.52
-72
19.21
9.13
116
-27.03
0.045
60
0.72
-25
0.9
0.34
-101
15.40
5.89
94
-24.01
0.063
58
0.62
-28
1.0
0.31
-106
14.60
5.37
90
-23.41
0.067
58
0.61
-29
1.5
0.22
-129
11.54
3.77
74
-20.85
0.091
58
0.58
-33
1.8
0.19
-141
10.12
3.21
66
-19.52
0.106
58
0.57
-36
2.0
0.17
-150
9.33
2.93
61
-18.72
0.116
57
0.57
-38
2.4
0.14
-169
7.95
2.50
52
-17.22
0.138
56
0.57
-42
3.0
0.12
160
6.34
2.08
39
-15.25
0.173
52
0.56
-49
4.0
0.16
117
4.46
1.67
20
-12.40
0.240
44
0.53
-63
5.0
0.22
93
3.15
1.44
2
-10.03
0.315
33
0.48
-82
AT-32063 Typical Noise Parameters
Common Emitter, Z
o
= 50
, V
CE
= 2.7 V, I
C
= 5 mA
Freq.
Fmin
G
A
G
opt
R
n
GHz
dB
dB
Mag.
Ang.
--
0.9
0.98
16.4
0.45
51
0.23
1.8
1.50
11.6
0.29
100
0.16
2.4
1.77
10.1
0.33
153
0.11
AT-32063 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, V
CE
= 2.7 V, I
C
= 20 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.55
-41
30.48
33.40
143
-39.81
0.010
74
0.83
-15
0.5
0.20
-107
21.24
11.53
97
-29.18
0.035
72
0.56
-20
0.9
0.13
-137
16.48
6.66
82
-24.63
0.059
72
0.53
-22
1.0
0.13
-141
15.60
6.02
79
-23.79
0.065
71
0.53
-22
1.5
0.10
-164
12.26
4.10
67
-20.43
0.095
68
0.52
-27
1.8
0.09
-178
10.78
3.46
60
-18.88
0.114
66
0.53
-31
2.0
0.09
172
9.93
3.14
56
-17.98
0.126
64
0.53
-34
2.4
0.08
152
8.52
2.67
48
-16.39
0.151
60
0.53
-39
3.0
0.10
127
6.85
2.20
36
-14.4
0.191
54
0.52
-47
4.0
0.15
101
4.92
1.76
18
-11.68
0.261
43
0.48
-61
5.0
0.21
86
3.59
1.51
0
-9.52
0.334
31
0.44
-79
AT-32063 Typical Noise Parameters
Common Emitter, Z
o
= 50
, V
CE
= 2.7 V, I
C
= 20 mA
Freq.
Fmin
G
A
G
opt
R
n
GHz
dB
dB
Mag.
Ang.
--
0.9
1.51
17.9
0.13
88
0.20
1.8
1.78
12.7
0.20
178
0.13
2.4
1.96
10.6
0.28
235
0.08
0
5
S21
10
15
20
25
30
35
0.1
1.1
2.1
3.1
4.1
5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at
V
CE
=2.7 V, I
C
= 5mA.
MSG
MSG
MAG
0
5
S21
10
15
20
40
25
30
35
0.1
1.1
2.1
3.1
4.1
5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 10. Gain vs. Frequency at
V
CE
=2.7 V, I
C
= 20mA.
MSG
MSG
MAG
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