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Электронный компонент: AT-41400

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4-99
Up to 6 GHz Low Noise Silicon
Bipolar Transistor Chip
Technical Data
Features
Low Noise Figure:
1.6 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.5 dB Typical at 2.0 GHz
10.5 dB Typical at 4.0 GHz
High Gain-Bandwidth
Product:
9.0 GHz Typical f
T
AT-41400
Chip Outline
Description
Hewlett-Packard's AT-41400 is a
general purpose NPN bipolar
transistor chip that offers excel-
lent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigitated
geometry yields an intermediate
sized transistor with impedances
that are easy to match for low
noise and moderate power appli-
cations. This device is designed for
use in low noise, wideband
amplifier, mixer and oscillator
applications in the VHF, UHF, and
microwave frequencies. An
optimum noise match near 50
at
1 GHz , makes this device easy to
use as a low noise amplifier.
The AT-41400 bipolar transistor is
fabricated using Hewlett-Packard's
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8922E
4-100
AT-41400 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
20
V
CEO
Collector-Emitter Voltage
V
12
I
C
Collector Current
mA
60
P
T
Power Dissipation
[2,3]
mW
500
T
j
Junction Temperature
C
200
T
STG
Storage Temperature
C
-65 to 200
Thermal Resistance
[2,4]
:
jc
= 95
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
MOUNTING
SURFACE
= 25
C.
3. Derate at 10.5 mW/
C for
T
MOUNTING
SURFACE
> 153
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section
"Thermal Resistance" for more
information.
Part Number Ordering Information
Part Number
Devices Per Tray
AT-41400-GP4
100
Note:
For more information, see "Tape and Reel Packaging for Semiconductor Devices".
Electrical Specifications, T
A
= 25
C
Symbol
Parameters and Test Conditions
[1]
Units Min.
Typ. Max.
|S
21E
|
2
Insertion Power Gain; V
CE
= 8 V, I
C
= 25 mA
f = 2.0 GHz
dB
12.0
f = 4.0 GHz
6.5
P
1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
19.0
V
CE
= 8 V, I
C
= 25 mA
f= 4.0 GHz
18.5
G
1 dB
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 25 mA
f = 2.0 GHz
dB
15.0
f = 4.0 GHz
10.5
NF
O
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
f = 1.0 GHz
dB
1.3
f = 2.0 GHz
1.6
f = 4.0 GHz
3.0
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
f = 1.0 GHz
dB
18.5
f = 2.0 GHz
14.5
f = 4.0 GHz
10.5
f
T
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 25 mA
GHz
9.0
h
FE
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 10 mA
--
30
150
300
I
CBO
Collector Cutoff Current; V
CB
= 8 V
A
0.2
I
EBO
Emitter Cutoff Current; V
EB
= 1 V
A
1.0
C
CB
Collector Base Capacitance
[2]
: V
CB
= 8 V, f = 1 MHz
pF
0.17
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
4-101
AT-41400 Typical Performance, T
A
= 25
C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10mA.
GAIN (dB)
I
C
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN (dB)
0
10
20
30
40
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V
CE
= 8 V.
10 V
10 V
4 V
4 V
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 25 mA.
G
A
(dB)
0.1
0.5
0.3
1.0
3.0
6.0
I
C
(mA)
GAIN (dB)
I
C
(mA)
Figure 4. Output Power and 1 dB
Compressed Gain vs. Collector
Current. V
CE
= 8 V.
24
20
16
12
8
4
G
1 dB
(dB)
P
1 dB
(dBm)
0
10
20
30
40
P1dB
G1dB
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF (dB)
4
3
2
1
NF
O
(dB)
0.5
2.0
1.0
3.0
4.0 5.0
16
15
14
13
12
GA
GA
NFO
NFO
GA
NFO
NF50
6 V
6 V
0
10
20
30
40
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
6
4
2
0
NF
O
(dB)
16
14
12
10
8
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
I
C
(mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
11
8
4
0
|S
21E
|
2
GAIN (dB)
0
10
20
30
40
1.0 GHz
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|
2
4-102
AT-41400 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
CE
= 8 V, I
C
= 10 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.73
-39
28.3
25.84
159
-39.2
.011
75
.94
-12
0.5
.60
-121
22.2
12.91
113
-30.2
.031
48
.61
-28
1.0
.57
-156
17.2
7.27
94
-28.0
.040
51
.50
-25
1.5
.56
-172
13.7
4.84
84
-26.4
.048
59
.47
-25
2.0
.57
176
11.4
3.71
77
-24.9
.057
66
.46
-24
2.5
.57
170
9.5
2.97
71
-23.6
.066
69
.46
-26
3.0
.60
164
8.0
2.52
64
-22.3
.077
72
.45
-28
3.5
.60
157
6.8
2.18
61
-20.9
.090
77
.47
-29
4.0
.61
152
5.5
1.89
55
-20.1
.099
79
.47
-30
4.5
.63
147
4.7
1.72
51
-18.7
.116
81
.47
-36
5.0
.63
144
3.7
1.53
46
-17.8
.129
80
.48
-40
5.5
.65
139
3.1
1.42
42
-17.0
.141
82
.49
-44
6.0
66
136
2.1
1.28
38
-16.1
.156
83
.50
-47
AT-41400 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
CE
= 8 V, I
C
= 25 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.56
-60
31.8
39.07
152
-40.9
.009
69
.87
-18
0.5
.54
-145
23.5
15.00
104
-32.8
.023
56
.49
-28
1.0
.54
-170
18.1
8.03
90
-29.6
.033
65
.42
-23
1.5
.55
179
14.5
5.30
82
-26.9
.045
72
.41
-22
2.0
.56
170
12.1
4.04
76
-24.7
.058
75
.41
-23
2.5
.56
165
10.2
3.24
72
-23.1
.070
78
.40
-23
3.0
.58
159
8.8
2.75
65
-21.6
.083
79
.40
-25
3.5
.59
154
7.5
2.37
62
-20.4
.096
82
.41
-26
4.0
.60
149
6.3
2.06
57
-19.3
.108
83
.42
-28
4.5
.61
145
5.4
1.87
53
-18.1
.124
84
.42
-33
5.0
.62
142
4.5
1.67
49
-17.3
.136
83
.43
-36
5.5
.64
137
3.8
1.54
44
-16.5
.150
85
.42
-40
6.0
.65
134
2.9
1.40
41
-15.7
.165
84
.44
-45
A model for this device is available in the DEVICE MODELS section.
AT-41400 Noise Parameters:
V
CE
= 8 V, I
C
= 10 mA
Freq.
NF
O
opt
GHz
dB
Mag
Ang
R
N
/50
0.1
1.2
.12
3
0.17
0.5
1.2
.10
15
0.17
1.0
1.3
.06
27
0.16
2.0
1.6
.24
163
0.16
4.0
3.0
.52
-153
0.18
4-103
AT-41400 Chip Dimensions
250
m
9.8 mil
30
m
1.18 mil
250
m
9.8 mil
Emitter Pad
Base Pad
DIA
90
m
3.54 mil
Note: Die thickness is 5 to 6 mil.