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Электронный компонент: AT41486

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4-129
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
High Associated Gain:
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
High Gain-Bandwidth
Product: 8.0 GHz Typical f
T
Surface Mount Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-41486
86 Plastic Package
Note:
1. Refer to "Tape-and-Reel Packaging for
Semiconductor Devices".
Description
Hewlett-Packard's AT-41486 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is
fabricated using Hewlett-Packard's
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
Pin Connections
5965-8928E
414
4-130
AT-41486 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
20
V
CEO
Collector-Emitter Voltage
V
12
I
C
Collector Current
mA
60
P
T
Power Dissipation
[2,3]
mW
500
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
Thermal Resistance
[2,4]
:
jc
= 165
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 6 mW/
C for
T
C
> 68
C.
4. See MEASUREMENTS section
"Thermal Resistance" for more
information.
Part Number Ordering Information
Part Number
Increment
Comments
AT-41486-TR1
1000
Reel
AT-41486-BLK
100
Bulk
Note:
For more information, see "Tape and Reel Packaging for Semiconductor Devices".
Electrical Specifications, T
A
= 25
C
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
|S
21E
|
2
Insertion Power Gain; V
CE
= 8 V, I
C
= 25 mA
f = 2.0 GHz
dB
17.5
f = 4.0 GHz
11.5
P
1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
18.0
V
CE
= 8 V, I
C
= 25 mA
G
1 dB
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 25 mA
f = 2.0 GHz
dB
13.5
NF
O
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
f = 1.0 GHz
dB
1.4
1.8
f = 2.0 GHz
1.7
f = 4.0 GHz
3.0
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
f = 1.0 GHz
dB
17.0
18.0
f = 2.0 GHz
13.0
f = 4.0 GHz
9.0
f
T
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 25 mA
GHz
8.0
h
FE
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 10 mA
--
30
150
270
I
CBO
Collector Cutoff Current; V
CB
= 8 V
A
0.2
I
EBO
Emitter Cutoff Current; V
EB
= 1 V
A
1.0
C
CB
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
pF
0.25
Note:
1. For this test, the emitter is grounded.
4-131
AT-41486 Typical Performance, T
A
= 25
C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10mA.
GAIN (dB)
I
C
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN (dB)
0
10
20
30
40
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V
CE
= 8 V.
10 V
4 V
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 25 mA.
GAIN (dB)
0.1
0.5
0.3
1.0
3.0
6.0
I
C
(mA)
GAIN (dB)
I
C
(mA)
Figure 4. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V,
f = 2.0 GHz.
24
20
16
12
8
4
G
1 dB
(dB)
P
1 dB
(dBm)
0
10
20
30
40
P1dB
G1dB
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF (dB)
4
3
2
1
NF
O
(dB)
0.5
2.0
1.0
3.0
4.0 5.0
15
14
13
12
11
GA
GA
NFO
NFO
GA
NFO
NF50
6 V
0
10
20
30
40
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
6
4
2
0
NF
O
(dB)
16
14
12
10
8
I
C
(mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0
10
20
30
40
1.0 GHz
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|
2
10 V
4 V
6 V
4-132
AT-41486 Typical Scattering Parameters,
Common Emitter,
Z
O
= 50
, T
A
= 25
C, V
CE
= 8 V, I
C
= 10 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.74
-38
28.1
25.46
157
-39.6
.011
68
.94
-12
0.5
.59
-127
22.0
12.63
107
-30.2
.031
47
.60
-29
1.0
.56
-168
16.8
6.92
84
-27.7
.041
46
.49
-29
1.5
.57
169
13.5
4.72
69
-26.2
.049
49
.45
-32
2.0
.62
152
11.1
3.61
56
-24.8
.058
43
.42
-39
2.5
.63
142
9.3
2.91
47
-23.4
.068
52
.40
-42
3.0
.64
130
7.6
2.41
37
-22.2
.078
52
.39
-50
3.5
.68
122
6.3
2.06
26
-20.6
.093
51
.37
-60
4.0
.71
113
5.1
1.80
16
-19.5
.106
48
.35
-70
4.5
.74
105
4.0
1.59
7
-18.0
.125
48
.35
-84
5.0
.77
99
3.1
1.42
-4
-17.2
.139
43
.35
-98
5.5
.79
93
2.0
1.27
-13
-16.3
.153
38
.35
-114
6.0
.81
87
1.1
1.13
-22
-15.4
.170
34
.35
-131
AT-41486 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
CE
= 8 V, I
C
= 25 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.50
-75
32.0
40.01
142
-41.3
.009
54
.85
-17
0.5
.55
-158
23.2
14.38
97
-34.1
.020
48
.51
-24
1.0
.57
177
17.5
7.50
78
-29.9
.032
61
.46
-24
1.5
.57
161
14.1
5.07
65
-27.3
.043
62
.44
-28
2.0
.59
148
11.5
3.75
53
-24.8
.058
59
.43
-35
2.5
.61
139
9.6
3.02
45
-22.9
.072
58
.40
-41
3.0
.65
128
8.0
2.52
34
-21.6
.083
57
.38
-49
3.5
.70
121
6.7
2.17
24
-20.1
.099
56
.36
-59
4.0
.74
113
5.7
1.92
14
-18.8
.115
52
.34
-72
4.5
.78
107
4.7
1.72
3
-17.6
.132
47
.32
-87
5.0
.78
102
3.7
1.53
-8
-16.6
.149
42
.31
-106
5.5
.78
96
2.7
1.36
-19
-15.4
.169
36
.31
-125
6.0
.76
91
1.6
1.21
-29
-14.5
.188
31
.33
-144
A model for this device is available in the DEVICE MODELS section.
AT-41486 Noise Parameters:
V
CE
= 8 V, I
C
= 10 mA
Freq.
NF
O
opt
GHz
dB
Mag
Ang
R
N
/50
0.1
1.3
.12
3
0.17
0.5
1.3
.10
16
0.17
1.0
1.4
.04
43
0.16
2.0
1.7
.12
-145
0.16
4.0
3.0
.44
-99
0.40
4-133
86 Plastic Package Dimensions
4
0.51
0.13
(0.020
0.005)
2.34
0.38
(0.092
0.015)
2.67
0.38
(0.105
0.15)
1
3
2
2.16
0.13
(0.085
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52
0.25
(0.060
0.010)
0.66
0.013
(0.026
0.005)
0.203
0.051
(0.006
0.002)
0.30 MIN
(0.012 MIN)
C
L
45
5
TYP.
8
MAX
0
MIN