ChipFind - документация

Электронный компонент: AT-42000

Скачать:  PDF   ZIP

Document Outline

4-149
Up to 6 GHz Medium Power
Silicon Bipolar Transistor Chip
Technical Data
Features
High Output Power:
21.0 dBm Typical P
1 dB
at 2.0 GHz
20.5 dBm Typical P
1 dB
at 4.0 GHz
High Gain at 1 dB
Compression:
15.0 dB Typical G
1 dB
at 2.0 GHz
10.0 dB Typical G
1 dB
at 4.0 GHz
Low Noise Figure: 1.9 dB
Typical NF
O
at 2.0 GHz
High Gain-Bandwidth
Product: 9.0 GHz Typical f
T
AT-42000
Chip Outline
Description
Hewlett-Packard's AT-42000 is a
general purpose NPN bipolar
transistor chip that offers excel-
lent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated
geometry yields a medium sized
transistor with impedances that
are easy to match for low noise
and medium power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50
up to 1 GHz ,
makes this device easy to use as a
low noise amplifier.
The AT-42000 bipolar transistor is
fabricated using Hewlett-Packard's
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
The recommended assembly
procedure is gold-eutectic die
attach at 400
o
C and either wedge
or ball bonding using 0.7 mil gold
wire. See APPLICATIONS section,
"Chip Use".
5965-8909E
4-150
AT-42000 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
20
V
CEO
Collector-Emitter Voltage
V
12
I
C
Collector Current
mA
80
P
T
Power Dissipation
[2,3]
mW
600
T
j
Junction Temperature
C
200
T
STG
Storage Temperature
C
-65 to 200
Thermal Resistance
[2,4]
:
jc
= 70
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
= 25
C.
3. Derate at 14.3 mW/
C for
T
Mounting Surface
> 158
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section
"Thermal Resistance" for more
information.
Part Number Ordering Information
Part Number
Devices Per Tray
AT-42000-GP4
100
Electrical Specifications, T
A
= 25
C
Symbol
Parameters and Test Conditions
[1]
Units Min.
Typ. Max.
|S
21E
|
2
Insertion Power Gain; V
CE
= 8 V, I
C
= 35 mA
f = 2.0 GHz
dB
11.5
f = 4.0 GHz
5.5
P
1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
21.0
V
CE
= 8 V, I
C
= 35 mA
f= 4.0 GHz
20.5
G
1 dB
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 35 mA
f = 2.0 GHz
dB
15.0
f = 4.0 GHz
10.0
NF
O
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
f = 2.0 GHz
dB
1.9
f = 4.0 GHz
3.0
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
10.5
f
T
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 35 mA
GHz
9.0
h
FE
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 35 mA
--
30
150
270
I
CBO
Collector Cutoff Current; V
CB
= 8 V
A
0.2
I
EBO
Emitter Cutoff Current; V
EB
= 1 V
A
2.0
C
CB
Collector Base Capacitance
[2]
: V
CB
= 8 V, f = 1 MHz
pF
0.23
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
4-151
AT-42000 Typical Performance, T
A
= 25
C
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 35 mA.
GAIN (dB)
0.1
0.5
0.3
1.0
3.0
6.0
I
C
(mA)
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V.
24
20
16
12
8
4
G
1 dB
(dB)
P
1 dB
(dBm)
0
10
20
30
40
50
P
1dB
G
1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|
2
I
C
(mA)
Figure 3. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0
10
20
30
40
50
1.0 GHz
2.0 GHz
4.0 GHz
I
C
(mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
10 V
4 V
6 V
4 V
10 V
6 V
24
20
16
12
16
14
12
10
G
1 dB
(dB)
P
1 dB
(dBm)
0
10
20
30
40
50
P
1dB
G
1dB
FREQUENCY (GHz)
Figure 6. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10mA.
GAIN (dB)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NF
O
(dB)
0.5
2.0
1.0
3.0 4.0 5.0
G
A
NF
O
I
C
(mA)
Figure 4. Insertion Power Gain vs.
Collector Current and Voltage.
f = 2.0 GHz.
13
12
11
10
9
8
7
|S
21E
|
2
GAIN (dB)
0
10
20
30
40
50
10 V
6 V
4 V
4-152
AT-42000 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
CE
= 8 V, I
C
= 10 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.70
-50
28.0
25.19
155
-37.7
.013
71
.92
-14
0.5
.67
-136
20.9
11.04
108
-30.5
.030
43
.57
-27
1.0
.66
-166
15.7
6.08
90
-28.9
.036
47
.50
-24
1.5
.66
-173
12.1
4.02
86
-28.2
.039
52
.48
-23
2.0
.66
179
9.8
3.09
82
-27.5
.042
57
.47
-23
2.5
.67
170
7.8
2.46
74
-26.0
.050
66
.47
-23
3.0
.67
165
6.3
2.08
68
-24.7
.058
72
.47
-26
3.5
.70
157
5.1
1.80
61
-23.4
.068
77
.47
-28
4.0
.70
151
3.9
1.56
57
-21.8
.081
82
.48
-30
4.5
.71
145
2.9
1.40
51
-20.7
.092
86
.50
-34
5.0
.73
138
1.9
1.24
41
-19.3
.109
87
.51
-38
5.5
.74
132
1.2
1.15
36
-17.2
.138
88
.51
-50
6.0
.76
129
0.2
1.02
32
-16.3
.154
87
.53
-56
AT-42000 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
CE
= 8 V, I
C
= 35 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.49
-96
33.0
44.61
143
-40.9
.009
65
.79
-24
0.5
.62
-163
22.8
13.87
98
-34.4
.019
58
.42
-26
1.0
.63
179
17.2
7.25
86
-30.5
.030
70
.38
-22
1.5
.63
171
13.5
4.74
78
-27.7
.041
76
.38
-23
2.0
.65
163
11.2
3.62
72
-25.4
.054
79
.38
-25
2.5
.65
159
9.3
2.90
67
-23.6
.066
82
.38
-27
3.0
.68
154
7.8
2.44
60
-22.1
.079
82
.38
-29
3.5
.67
148
6.5
2.12
57
-20.6
.093
84
.39
-32
4.0
.69
144
5.3
1.83
51
-19.7
.104
86
.40
-34
4.5
.70
139
4.4
1.65
47
-18.3
.121
86
.41
-40
5.0
.70
137
3.3
1.46
43
-17.5
.133
85
.42
-44
5.5
.72
131
2.7
1.36
38
-16.5
.149
86
.41
-48
6.0
.74
128
1.7
1.22
34
-15.7
.164
85
.44
-55
A model for this device is available in the DEVICE MODELS section.
AT-42000 Noise Parameters:
V
CE
= 8 V, I
C
= 10 mA
Freq.
NF
O
opt
GHz
dB
Mag
Ang
R
N
/50
0.1
1.0
.04
13
0.13
0.5
1.1
.05
69
0.13
1.0
1.5
.09
127
0.12
2.0
1.9
.23
171
0.11
4.0
3.0
.47
-154
0.14
4-153
AT-42000 Chip Dimensions
305
m
12 mil
30
m
1.18 mil
305
m
12 mil
Emitter Pad
Base Pad
DIA
90
m
3.54 mil
Note: Die thickness is 5 to 6 mil.