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Электронный компонент: ATF-13736-STR

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5-39
216 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
36 micro-X Package
Features
Low Noise Figure:
1.8 dB Typical at 12 GHz
High Associated Gain:
9.0 dB Typical at 12 GHz
High Output Power:
17.5 dB Typical at 12 GHz
Cost Effective Ceramic
Microstrip Package
Tape-and-Reel Packaging
Option Available
[1]
Electrical Specifications, T
A
= 25
C
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
NF
O
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA
f = 8.0 GHz
dB
1.5
f = 12.0 GHz
dB
1.8
2.2
f = 14.0 GHz
dB
2.1
G
A
Gain @ NF
O
: V
DS
= 2.5 V, I
DS
= 20 mA
f = 8.0 GHz
dB
11.5
f = 12.0 GHz
dB
8.0
9.0
f = 14.0 GHz
dB
7.0
P
1 dB
Power Output @ 1 dB Gain Compression:
f =12.0 GHz
dBm
17.5
V
DS
= 4 V, I
DS
= 40 mA
G
1 dB
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 40 mA
f = 12.0 GHz
dB
8.5
g
m
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V
mmho
25
55
I
DSS
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V
mA
40
50
90
V
P
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 1 mA
V
-4.0
-1.5
-0.5
Note:
1. Refer to PACKAGING section "Tape-and-Reel Packaging for Surface Mount Semiconductors".
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
5965-8722E
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5-40
ATF-13736 Typical Performance, T
A
= 25
C
ATF-13736 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
DS
Drain-Source Voltage
V
+5
V
GS
Gate-Source Voltage
V
-4
V
GD
Gate-Drain Voltage
V
-6
I
DS
Drain Current
mA
I
DSS
P
T
Power Dissipation
[2,3]
mW
225
T
CH
Channel Temperature
C
175
T
STG
Storage Temperature
[4]
C
-65 to +175
Thermal Resistance :
jc
= 400
C/W; T
CH
= 150
C
Liquid Crystal Measurement:
1
m Spot Size
[5]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25
C.
3. Derate at 2.5 mW/
C for
T
CASE
> 85
C.
4. Storage above +150
C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175
C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-13736-TR1
1000
7"
ATF-13736-STR
10
strip
FREQUENCY (GHz)
NF
O
(dB)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2.5 V, I
DS
= 20 mA.
FREQUENCY (GHz)
GAIN (dB)
2.0
1.5
1.0
0.5
0
16
14
12
10
8
6
G
A
(dB)
6.0
10.0
8.0
12.0 14.0 16.0
G
A
NF
O
|S
21
|
2
MSG
MSG
MAG
2.0
4.0
6.0
8.0 10.0 12.0 16.0
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2.5V, I
DS
= 20 mA, T
A
= 25
C.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2.5 V, I
DS
= 20 mA.
FREQUENCY (GHz)
GAIN (dB)
|S
21
|
2
MSG
MAG
2.0
4.0
6.0
8.0 10.0 12.0 16.0
25
20
15
10
5
0
ATF-13736 Noise Parameters:
V
DS
= 2.5 V, I
DS
= 20 mA
Freq.
NF
O
opt
GHz
dB
Mag
Ang
R
N
/50
4.0
1.1
.71
102
.10
6.0
1.3
.55
147
.07
8.0
1.5
.46
-144
.19
12.0
1.8
.50
-40
.88
14.0
2.1
.52
-2
1.17
5-41
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
DS
= 2.5 V, I
DS
= 20 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
2.0
.94
-46
11.0
3.56
128
-26.4
.048
55
.59
-36
3.0
.86
-70
10.2
3.23
109
-25.2
.055
40
.57
-47
4.0
.84
-90
9.8
3.08
91
-23.1
.070
31
.56
-55
5.0
.77
-110
9.6
3.02
69
-20.9
.090
18
.52
-63
6.0
.68
-135
9.9
3.14
51
-19.3
.109
7
.47
-75
7.0
.59
-170
9.9
3.13
24
-18.0
.126
-12
.39
-92
8.0
.54
149
9.5
2.99
-1
-17.6
.132
-27
.30
-112
9.0
.56
112
8.8
2.75
-22
-16.9
.143
-43
.19
-121
10.0
.58
86
8.1
2.53
-43
-16.4
.152
-58
.11
-140
11.0
.60
63
7.6
2.41
-66
-16.5
.149
-73
.09
92
12.0
.64
39
7.0
2.24
-90
-17.1
.140
-81
.15
47
13.0
.68
20
6.4
2.08
-106
-17.6
.132
-90
.19
21
14.0
.70
9
6.0
1.99
-130
-18.0
.126
-97
.19
-3
15.0
.72
-1
5.2
1.83
-145
-18.2
.123
-111
.15
-26
16.0
.74
-17
4.6
1.70
-177
-18.4
.120
-129
.11
-34
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
DS
= 4 V, I
DS
= 40 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
2.0
.88
-44
13.5
4.73
130
-26.4
.048
64
.67
-28
3.0
.76
-68
13.0
4.47
107
-24.9
.057
52
.61
-39
4.0
.68
-90
12.4
4.19
86
-22.5
.075
39
.57
-46
5.0
.56
-113
12.0
4.00
66
-21.0
.089
32
.52
-52
6.0
.42
-145
11.8
3.90
44
-19.8
.102
21
.44
-61
7.0
.37
161
11.5
3.74
20
-18.6
.117
9
.31
-75
8.0
.47
116
10.5
3.36
-3
-17.9
.128
-5
.17
-95
9.0
.57
90
9.4
2.96
-23
-17.2
.138
-19
.05
-143
10.0
.63
70
8.9
2.77
-41
-17.4
.135
-28
.06
128
11.0
.69
51
7.9
2.47
-63
-17.7
.131
-39
.17
100
12.0
.77
33
7.1
2.26
-82
-18.0
.126
-52
.26
75
13.0
.82
21
6.0
2.00
-101
-18.6
.118
-65
.35
62
14.0
.85
13
5.4
1.86
-117
-19.2
.110
-75
.39
54
15.0
.83
1
4.8
1.73
-134
-19.7
.104
-83
.41
49
16.0
.81
-17
4.4
1.65
-154
-19.8
.102
-103
.42
41
A model for this device is available in the DEVICE MODELS section.
5-42
36 micro-X Package Dimensions
1
3
4
2
SOURCE
SOURCE
DRAIN
GATE
2.15
(0.085)
2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57
0.25
0.180
0.010
0.15
0.05
(0.006
0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx =
0.005
mm .xx =
0.13
0.56
(0.022)
1.45
0.25
(0.057
0.010)
137