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Электронный компонент: ATF-35143

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1
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-35143
Features
Low Noise Figure
Excellent Uniformity in
Product Specifications
Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
0.4 dB Noise Figure
18 dB Associated Gain
11 dBm Output Power at
1 dB Gain Compression
21 dBm Output 3
rd
Order
Intercept
Applications
Low Noise Amplifier for
Cellular/PCS Handsets
LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent's ATF-35143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-35143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-33143. The typical specifica-
tions for these devices at 2 GHz
are shown in the table below:
Pin Connections and
Package Marking
Part No.
Gate Width
Bias Point
NF (dB) Ga (dB) OIP3 (dBm)
ATF-33143
1600
4 V, 80 mA
0.5
15.0
33.5
ATF-34143
800
4 V, 60 mA
0.5
17.5
31.5
ATF-35143
400
2 V, 15 mA
0.4
18.0
21.0
GATE
5Px
SOURCE
DRAIN
SOURCE
Note:
Top View. Package marking
provides orientation and identification.
"5P" = Device code
"x" = Date code character. A new
character is assigned for each month, year.
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ATF-35143 Absolute Maximum Ratings
[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain - Source Voltage
[2]
V
5.5
V
GS
Gate - Source Voltage
[2]
V
-5
V
GD
Gate Drain Voltage
[2]
V
-5
I
DS
Drain Current
[2]
mA
I
dss
[3]
P
diss
Total Power Dissipation
[4]
mW
300
P
in max
RF Input Power
dBm
14
T
CH
Channel Temperature
C
160
T
STG
Storage Temperature
C
-65 to 160
jc
Thermal Resistance
[5]
C/W
310
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. V
GS
= 0 V
4. Source lead temperature is 25
C.
Derate 3.2 mW/
C for T
L
> 67
C.
5. Thermal resistance measured using
150
C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts
[7, 8]
Notes:
6. Under large signal conditions, V
GS
may
swing positive and the drain current may
exceed I
dss
. These conditions are
acceptable as long as the maximum P
diss
and P
in max
ratings are not exceeded.
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8.
Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
V
DS
(V)
Figure 1. Typical Pulsed I-V Curves
[6]
.
(V
GS
= -0.2 V per step)
I
DS
(mA)
0
2
4
6
8
120
100
80
60
40
20
0
+0.6 V
0 V
0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
19
21
20
23
22
24
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 1.73
Std = 0.35
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
0.2
0.4
0.3
0.6
0.5
0.7
200
160
120
80
40
0
-3 Std
+3 Std
Cpk = 3.7
Std = 0.03
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
16
17
18
19
20
160
120
80
40
0
-3 Std
+3 Std
Cpk = 2.75
Std = 0.17
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Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
1dB
, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
_mag = 0.66
_ang = 5
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
ATF-35143 Electrical Specifications
T
A
= 25
C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
[2]
Max.
I
dss
[1]
Saturated Drain Current
V
DS
= 1.5 V, V
GS
= 0 V
mA
40
65
80
V
P
[1]
Pinchoff Voltage
V
DS
= 1.5 V, I
DS
= 10% of I
dss
V
-0.65
-0.5
- 0.35
I
d
Quiescent Bias Current
V
GS
= 0.45 V, V
DS
= 2 V
mA
--
15
--
g
m
[1]
Transconductance
V
DS
= 1.5 V, g
m
= I
dss
/V
P
mmho
90
120
--
I
GDO
Gate to Drain Leakage Current
V
GD
= 5 V
A
250
I
gss
Gate Leakage Current
V
GD
= V
GS
= -4 V
A
--
10
150
f = 2 GHz
V
DS
= 2 V, I
DS
= 15 mA
dB
0.4
0.7
NF
Noise Figure
[3]
V
DS
= 2 V, I
DS
= 5 mA
0.5
0.9
f = 900 MHz
V
DS
= 2 V, I
DS
= 15 mA
dB
0.3
V
DS
= 2 V, I
DS
= 5 mA
0.4
f = 2 GHz
V
DS
= 2 V, I
DS
= 15 mA
dB
16.5
18
19.5
G
a
Associated Gain
[3]
V
DS
= 2 V, I
DS
= 5 mA
14
16
18
f = 900 MHz
V
DS
= 2 V, I
DS
= 15 mA
dB
20
V
DS
= 2 V, I
DS
= 5 mA
18
Output 3
rd
Order
f = 2 GHz
V
DS
= 2 V, I
DS
= 15 mA
dBm
19
21
OIP3
Intercept Point
[4, 5]
V
DS
= 2 V, I
DS
= 5 mA
14
f = 900 MHz
V
DS
= 2 V, I
DS
= 15 mA
dBm
19
V
DS
= 2 V, I
DS
= 5 mA
14
1 dB Compressed
f = 2 GHz V
DS
= 2 V, I
DSQ
= 15 mA
dBm
10
P
1dB
Intercept Point
[4]
V
DS
= 2 V, I
DSQ
= 5 mA
8
f = 900 MHz V
DS
= 2 V, I
DSQ
= 15 mA
dBm
9
V
DS
= 2 V, I
DSQ
= 5 mA
9
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2 V 5 mA min/max data guaranteed via the 2 V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. P
out
= -10 dBm per tone
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ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P
1dB
measurements are performed with passive biasing. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the device
is running closer to class B as power output approaches P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
DS
= 4 V and I
DSQ
= 5 mA, I
d
increases to 30 mA as a P
1dB
of +15 dBm is approached.
I
DSQ
(mA)
Figure 6. OIP3 and P
1dB
vs. Bias at
2GHz.
[1,2]
OIP3,
P
1dB
(dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
I
DSQ
(mA)
Figure 7. OIP3 and P
1dB
vs. Bias at
900MHz.
[1,2]
OIP3,
P
1dB
(dBm)
0
60
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
30
25
20
15
10
5
I
DSQ
(mA)
Figure 8. NF and G
a
vs. Bias at 2GHz.
[1]
G
a
(dB)
0
60
20
10
40
50
30
2 V
3 V
4 V
G
a
NF
20
19
18
17
16
15
NF (dB)
2.5
2
1.5
1
0.5
0
I
DSQ
(mA)
Figure 9. NF and G
a
vs. Bias at
900MHz.
[1]
G
a
(dB)
0
60
20
10
40
50
30
2 V
3 V
4 V
G
a
NF
24
22
20
18
16
14
NF (dB)
2.5
2
1.5
1
0.5
0
I
DS
(mA)
Figure 10. P
1dB
vs. Bias (Active Bias)
[1]
P
1dB
(dBm)
0
80
25
20
15
10
5
0
-5
20
40
60
2 V
3 V
4 V
I
DS
(mA)
Figure 11. P
1dB
vs. Bias (Active Bias)
P
1dB
(dBm)
0
80
20
40
60
2 V
3 V
4 V
20
15
10
5
0
-5
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ATF-35143 Typical Performance Curves,
continued
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P
1dB
measurements are performed with passive biasing. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
dsq
the device is
running closer to class B as power output approaches P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
DS
= 4 V
and I
DSQ
= 5 mA, I
d
increases to 30 mA as a P
1dB
of +15 dBm is approached.
FREQUENCY (GHz)
Figure 12. F
min
vs. Frequency and
Current at 2 V.
F
min
(dB)
0
10
1.50
1.25
1.00
0.75
0.50
0.25
0
4
2
8
6
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2 V.
F
min
(dB)
0
10
25
20
15
10
5
4
2
8
6
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 14. F
min
and
G
a
vs. Frequency
and Temperature, V
DS
= 2 V, I
DS
= 15 mA.
G
a
(dB)
0
8
2
4
6
25
C
-40
C
85
C
22
20
18
16
14
12
I
DS
(mA)
Figure 16. OIP3, P
1dB
, NF and
Gain
vs.
Bias
[1]
(Active Bias, 2 V, 3.9 GHz).
OIP3,
P
1dB
(dBm),
Gain (dB)
0
80
20
40
60
P
1dB
OIP3
Gain
NF
25
20
15
10
5
0
NF (dB)
2.5
2
1.5
1
0.5
0
NF (dB)
1.0
0.8
0.6
0.4
0.2
0
I
DS
(mA)
Figure 17. OIP3, P
1dB
, NF and
Gain
vs.
Bias
[1]
(Active Bias, 2 V, 5.8 GHz).
OIP3,
P
1dB
(dBm),
Gain (dB)
0
80
20
40
60
P
1dB
OIP3
Gain
NF
25
20
15
10
5
0
-5
NF (dB)
3
2.5
2
1.5
1
0.5
0
FREQUENCY (GHz)
Figure 15. OIP3 and
P
1dB
vs. Frequency
and Temperature
[1,2]
, V
DS
= 2 V, I
DS
= 15mA.
OIP3,
P
1dB
(dBm)
0
8
2
4
6
25
C
-40
C
85
C
25
20
15
10
5
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