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Электронный компонент: ATF38143

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1
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-38143
Features
Low Noise Figure
Excellent Uniformity in
Product Specifications
Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 2 V, 10 mA (Typ.)
0.4 dB Noise Figure
16 dB Associated Gain
12.0 dBm Output Power at
1 dB Gain Compression
22.0 dBm Output 3
rd
Order
Intercept
Applications
Low Noise Amplifier for
Cellular/PCS Handsets
LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent Technologies's ATF-38143
is a high dynamic range, low
noise, PHEMT housed in a 4-lead
SC-70 (SOT-343) surface mount
plastic package.
Based on its featured perfor-
mance, ATF-38143 is suitable for
applications in cellular and PCS
handsets, LEO systems, MMDS,
and other systems requiring super
low noise figure with good
intercept in the 450 MHz to
10 GHz frequency range.
Pin Connections and
Package Marking
GATE
8Px
SOURCE
DRAIN
SOURCE
Note:
Top View. Package marking
provides orientation and identification.
"8P" = Device code
"x" = Date code character. A new
character is assigned for each month, year.
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ATF-38143 Absolute Maximum Ratings
[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain - Source Voltage
[2]
V
4.5
V
GS
Gate - Source Voltage
V
-4
V
GD
Gate Drain Voltage
V
-4
I
DS
Drain Current
mA
I
dss
P
diss
Total Power Dissipation
[2]
mW
580
P
in max
RF Input Power
dBm
17
T
CH
Channel Temperature
C
160
T
STG
Storage Temperature
C
-65 to 160
jc
Thermal Resistance
[3]
C/W
165
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Source lead temperature is 25
C.
Derate 6 mW/
C for T
L
> 64
C.
3. Thermal resistance measured using
150
C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts
Note:
Distribution data sample size is 450
samples taken from 6 different wafers.
Future wafers allocated to this product
may have nominal values anywhere within
the upper and lower spec limits.
Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
OIP3 (dB)
Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.
LSL=18.5, Nominal=21.99, USL=26.0
18
26
Cpk = 1.59062
Stdev = 0.73 dBm
6 Wafers
Sample Size = 450
300
250
200
150
100
50
0
22
20
24
+3 Std
-3 Std
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 10 mA.
LSL=0, Nominal=0.44, USL=0.85
0.1
0.3
0.2
0.6
0.4
0.5
0.9
0.7 0.8
-3 Std
+3 Std
Cpk = 4.08938
Stdev = 0.03 dB
6 Wafers
Sample Size = 450
180
150
120
90
60
30
0
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 10 mA.
LSL=15.0, Nominal=16.06, USL= 18.0
15
15.5
16
16.5
17
17.5
18
-3 Std
+3 Std
160
120
80
40
0
Cpk = 2.58097
Stdev = 0.14 dB
6 Wafers
Sample Size = 450
V
DS
(V)
Figure 1. Typical I-V Curves.
(V
GS
= -0.2 V per step)
I
DS
(mA)
0
1
2
3
4
5
250
200
150
100
50
0
0 V
0.6 V
+0.6 V
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Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
1dB
, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission Line
(0.5 dB loss)
50 Ohm
Transmission Line
(0.5 dB loss)
Input
Matching Circuit
mag = 0.380
ang = 58.2
(0.46 dB loss)
DUT
Output
Matching Circuit
mag = 0.336
ang = 34.5
(0.46 dB loss)
Output
ATF-38143 Electrical Specifications
T
A
= 25
C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units Min. Typ.
[2]
Max.
I
dss
[1]
Saturated Drain Current
V
DS
= 1.5 V, V
GS
= 0 V
mA
90
118
145
V
P
[1]
Pinchoff Voltage
V
DS
= 1.5 V, I
DS
= 10% of I
dss
V
-0.65
-0.5
- 0.35
I
d
Quiescent Bias Current
V
GS
= -0.54 V, V
DS
= 2 V
mA
--
10
--
g
m
[1]
Transconductance
V
DS
= 1.5 V, g
m
= I
dss
/V
P
mmho 180
230
--
I
GDO
Gate to Drain Leakage Current
V
GD
= -5 V
A
500
I
gss
Gate Leakage Current
V
GD
= V
GS
= -4 V
A
--
30
300
f = 2 GHz
V
DS
= 2 V, I
DS
= 5 mA
dB
0.6
V
DS
= 2 V, I
DS
= 10 mA
0.4
0.85
NF
Noise Figure
V
DS
= 2 V, I
DS
= 20 mA
0.3
f = 900 MHz
V
DS
= 2 V, I
DS
= 5 mA
dB
0.6
V
DS
= 2 V, I
DS
= 10 mA
0.4
V
DS
= 2 V, I
DS
= 20 mA
0.3
f = 2 GHz
V
DS
= 2 V, I
DS
= 5 mA
dB
15.3
V
DS
= 2 V, I
DS
= 10 mA
15
16.0
18
G
a
Associated Gain
[3]
V
DS
= 2 V, I
DS
= 20 mA
17.0
f = 900 MHz
V
DS
= 2 V, I
DS
= 5 mA
dB
17.0
V
DS
= 2 V, I
DS
= 10 mA
19.0
V
DS
= 2 V, I
DS
= 20 mA
20.5
Output 3
rd
Order
f = 2 GHz
V
DS
= 2 V, I
DS
= 10 mA
dBm
18.5
22.0
OIP3
Intercept Point
[3]
f = 900 MHz
V
DS
= 2 V, I
DS
= 10 mA
dBm
22.0
Input 3
rd
Order
f = 2 GHz
V
DS
= 2 V, I
DS
= 10 mA
dBm
6.0
IIP3
Intercept Point
[3]
f = 900 MHz
V
DS
= 2 V, I
DS
= 10 mA
dBm
3.0
1 dB Compressed
f = 2 GHz
V
DS
= 2 V, I
DS
= 10 mA
dBm
12.0
P
1dB
Compressed Power
[3]
f = 900 MHz
V
DS
= 2 V, I
DS
= 10 mA
dBm
12.0
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 6 wafers.
3. Measurements obtained using production test board described in Figure 5.
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ATF-38143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
10 mA bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P
1dB
measurements are performed with passive biasing. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the device
is running closer to class B as power output approaches P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing.
CURRENT, I
DS
(mA)
Figure 6. OIP3 and P
1dB
vs. I
d
at 2 V,
2 GHz.
OIP3,
P
1dB
(dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
OIP3
P1dB
CURRENT, I
DS
(mA)
Figure 7. OIP3 and P
1dB
vs. I
d
at 2 V,
900 MHz.
OIP3,
P
1dB
(dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
CURRENT, I
DS
(mA)
Figure 8. Noise Figure vs. I
d
at 2 V,
2 GHz.
NOISE FIGURE (dB)
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
60
20
10
40
50
30
0
CURRENT, I
DS
(mA)
Figure 9. Noise Figure vs. I
d
at 2 V,
900 MHz.
NOISE FIGURE (dB)
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
60
20
10
40
50
30
0
CURRENT, I
DS
(mA)
Figure 10. Associated Gain vs. I
d
at 2 V,
2 GHz.
ASSOCIA
T
ED GAIN (dB)
0
22
21
20
19
18
17
16
60
20
10
40
50
30
15
OIP3
P1dB
CURRENT, I
DS
(mA)
Figure 11. Associated Gain vs. I
d
at 2 V,
900 MHz.
ASSOCIA
T
ED GAIN (dB)
0
22
21
20
19
18
17
16
60
20
10
40
50
30
15
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ATF-38143 Typical Performance Curves,
continued
Notes:
1. P
1dB
measurements are performed with passive biasing. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the device
is running closer to class B as power output approaches P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing.
FREQUENCY (GHz)
Figure 12. F
min
vs. Frequency and
Current at 2 V.
F
min
(dB)
0
8
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
4
2
6
FREQUENCY (GHz)
Figure 13. F
min
and G
a
vs. Frequency
and Temperature at 2 V, 10 mA.
G
a
(dB)
0
30
25
20
15
10
5
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
7
2
1
4
5
6
3
40
C
+25
C
+85
C
G
a
F
min
FREQUENCY (GHz)
Figure 14. Associated Gain vs.
Frequency and Current at 2 V.
G
a
(dB)
0
12
30
25
20
15
10
5
0
4
2
8
10
6
5 mA
10 mA
20 mA
FREQUENCY (MHz)
Figure 15. P
1dB
and OIP3 vs. Frequency
and Temperature at 2 V, 10 mA.
P
1dB,
OIP3
(dBm)
0
8000
26
24
22
20
18
16
14
12
4000
2000
6000
10
40
C
+25
C
+85
C
CURRENT, I
DS
(mA)
Figure 16. NF, Gain, P
1dB
and OIP3 vs.
I
DS
at 2 V, 3.9 GHz.
GAIN (dB),
P
1dB
and OIP3 (dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
NF (dB)
P
1dB
OIP3
Gain
NF
CURRENT, I
DS
(mA)
Figure 17. NF, Gain, P
1dB
and OIP3 vs.
I
DS
at 2 V, 5.8 GHz.
GAIN (dB),
P
1dB
and OIP3 (dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
NF (dB)
P
1dB
OIP3
Gain
NF
5 mA
10 mA
20 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
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