Agilent HCPL-354
AC Input Phototransistor
Optocoupler
SMD Mini-Flat Type
Data Sheet
Description
The HCPL-354 contains a
phototransistor, optically coupled to
two light emitting diodes connected
inverse parallel. It can operate
directly by AC input current. It is
packaged in a 4-pin mini-flat SMD
package with a 2.0 mm profile. The
small dimension of this product
allows significant space saving. The
package volume is 30% smaller than
that of conventional DIP type. Input-
output isolation voltage is 3750 V
rms
.
Response time, t
r
, is typically 4
s
and minimum CTR is 20% at input
current of
1 mA.
Functional Diagram
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Features
AC input response
Current transfer ratio
(CTR: min. 20% at I
F
=
1 mA,
V
CE
= 5 V)
Isolation voltage between input
and output (V
iso
= 3,750 V
rms
)
Subminiature type
(The volume is smaller than that of
conventional DIP type by as far as
30%)
Mini-flat package
2.0 mm profile
UL approved
CSA approved
IEC/EN/DIN EN 60747-5-2
approved
Options available:
IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
Detecting or monitoring AC signals
Programmable controllers
AC/DC-input modules
AC line/digital logic isolation
4
1. ANODE, CATHODE
2. CATHODE, ANODE
3. EMITTER
4. COLLECTOR
3
1
2
Ordering Information
Specify Part Number followed by
Option Number (if desired).
HCPL-354-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
00A = Rank Mark A
2
Package Outline Drawing
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
30 seconds
60 ~ 150 sec
90 sec
60 sec
60 sec
25
C
150
C
200
C
250
C
260
C (Peak Temperature)
217
C
Time (sec)
Temperature (
C)
HCPL-354-000E
HCPL-354-060E
DIMENSIONS IN MILLIMETERS.
4.40
0.2
3.60
0.3
2.00
0.2
5.30
0.3
0.2
0.05
7.00
0.40
0.1
0.10
0.1
354
Y W W
2.54
0.25
DATE CODE *1
RANK *2
LEAD
FREE
+ 0.2
0.7
DIMENSIONS IN MILLIMETERS.
4.40
0.2
3.60
0.3
2.00
0.2
5.30
0.3
0.2
0.05
7.00
0.40
0.1
0.10
0.1
354 V
Y W W
2.54
0.25
DATE CODE *1
RANK *2
LEAD
FREE
+ 0.2
0.7
3
Absolute Maximum Ratings
Parameters
Symbol
Min.
Max.
Units
Storage Temperature
T
S
55
150
C
Ambient Operating Temperature
T
A
55
100
C
Lead Solder Temperature for 10s
T
sol
260
C
(1.6 mm below seating plane)
Average Forward Current
I
F
50
mA
Input Power Dissipation
P
I
70
mW
Collector Current
I
C
50
mA
Collector-Emitter Voltage
V
CEO
35
V
Emitter-Collector Voltage
V
ECO
6
V
Collector Power Dissipation
P
C
150
mW
Total Power Dissipation
P
tot
170
mW
Isolation Voltage
V
iso
3750
V
rms
(AC for 1 minute, R.H. = 40 ~ 60%)
[1]
Rank Mark
CTR (%)
Conditions
A
50 ~ 150
I
F
=
1 mA,
No Mark
20 ~ 400
V
CE
= 5 V,
T
A
= 25C
Electrical Specifications (T
A
= 25C)
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Forward Voltage
V
F
1.2
1.4
V
I
F
=
20 mA
Terminal Capacitance
C
t
30
250
pF
V = 0, f = 1 kHz
Collector Dark Current
I
CEO
100
nA
V
CE
= 20 V, I
F
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
35
V
I
C
= 0.1 mA, I
F
= 0
Emitter-Collector Breakdown Voltage
BV
ECO
6
V
I
E
= 10
A, I
F
= 0
Collector Current
I
C
0.2
4
mA
I
F
=
1 mA,
Current Transfer Ratio
[2]
CTR
20
400
%
V
CE
= 5 V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.1
0.2
V
I
F
=
20 mA, I
C
= 1 mA
Isolation Resistance
R
iso
5 x 10
10
1 x 10
11
DC 500 V
40 ~ 60% R.H.
Floating Capacitance
C
f
0.6
1
pF
V = 0, f = 1 MHz
Response Time (Rise)
t
r
4
18
s
V
CE
= 2 V, I
C
= 2 mA,
Response Time (Fall)
t
f
3
18
s
R
L
= 100
Notes:
1. Isolation voltage shall be measured using the following method:
(a) Short between anode and cathode on the primary side and between collector and emitter
on the secondary side.
(b) The isolation voltage tester with zero-cross circuit shall be used.
(c) The waveform of applied voltage shall be a sine wave.
2.
CTR = x 100%
I
C
I
F
4
I F
FORWARD CURRENT
mA
1
VF FORWARD VOLTAGE V
2.0
3.0
10
5
500
1.0
0
TA = 75C
0.5
1.5
2.5
2
20
50
100
200
TA = 50C
TA = 25C
TA = 0C
TA = -25C
Figure 1. Forward current vs. ambient
temperature.
Figure 2. Collector power dissipation vs.
ambient temperature.
Figure 3. Collector-emitter saturation voltage
vs. forward current.
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
Figure 7. Relative current transfer ratio vs.
ambient temperature.
Figure 8. Collector-emitter saturation
voltage vs. ambient temperature.
Figure 9. Collector dark current vs. ambient
temperature.
I F
FORWARD CURRENT
mA
0
TA AMBIENT TEMPERATURE C
75
125
50
25
10
40
0
50
100
-55
60
30
20
P
C
COLLECTOR POWER DISSIPATION
mW
0
TA AMBIENT TEMPERATURE C
100
50
200
150
75
125
25
0
50
100
-55
0
IF FORWARD CURRENT mA
10
100
40
0.2
0.1
20
60
120
140
CTR
CURRENT TRANSFER RATIO
%
80
100
0.5
20
1
50
5
2
VCE = 5 V
TA = 25C
I C
COLLECTOR CURRENT
mA
0
VCE COLLECTOR-EMITTER VOLTAGE V
6
10
40
20
50
3
0
PC (MAX.)
TA = 25C
I
F
= 30 mA
I
F
= 20 mA
I
F
= 5 mA
30
10
1
2
4
5
7
8
9
I
F
= 1 mA
I
F
= 10 mA
RELATIVE CURRENT TRANSFER RATIO
%
0
100
50
150
VCE = 5 V
IF = 1 mA
TA AMBIENT TEMPERATURE C
80
40
60
100
20
V
CE(SAT.)
COLLECTOR-EMITTER
SATURATION VOLTAGE
V
0
0.10
0.02
IC = 1 mA
IF = 20 mA
TA AMBIENT TEMPERATURE C
80
40
20
60
100
0.04
0.06
0.08
I CEO
COLLECTOR DARK CURRENT
nA
TA AMBIENT TEMPERATURE C
1
80
40
60
100
20
VCE = 20 V
10
100
1000
10000
0
IF FORWARD CURRENT mA
10.0
15.0
2
5.0
0
1
3
4
5
6
V
CE(SAT.)
COLLECTOR-EMITTER
SATURATION VOLTAGE
V
TA = 25C
IC = 0.5 mA
IC = 1 mA
IC = 3 mA
IC = 5 mA
IC = 7 mA
2.5
7.5
12.5
5
Figure 10. Response time vs. load resistance.
Figure 11. Frequency response.
Figure 12. Test circuit for response time.
Figure 13. Test circuit for frequency response.
RD
VCC
RL
OUTPUT
;;
;
VCC
RD
INPUT
RL
OUTPUT
INPUT
OUTPUT
10%
90%
t
d
;;
t
r
t
s
t
f
RESPONSE TIME
s
0.1
RL LOAD RESISTANCE k
0.1
5
1
0.5
0.2
0.5
0.2
2
10
2
1
5
10
20
50
100
VCE = 2 V
IC = 2 mA
TA = 25C
tf
tr
ts
td
VOLTAGE GAIN AV
dB
f FREQUENCY kHz
0.5
10
2
-20
-10
1
5
0.2
0
100
RL = 10 k
RL = 1 k
RL = 100
1000
VCE = 2 V
IC = 2 mA
TA = 25C
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