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Электронный компонент: HMMC-5040

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6-58
20 40 GHz Amplifier
Technical Data
Features
Large Bandwidth:
20 - 44 GHz Typical
21 - 40 GHz Specified
High Gain: 22 dB Typical
Saturated Output Power:
21 dBm Typical
Supply Bias:
4.5 volts @
300 mA
Description
The HMMC-5040 is a high-gain
broadband MMIC amplifier
designed for both military appli-
cations and commercial commu-
nication systems. This four stage
amplifier has input and output
matching circuitry for use in
50 ohm environments. It is
fabricated using a PHEMT
integrated circuit structure that
provides exceptional broadband
performance. The backside of the
chip is both RF and DC ground.
This helps simplify the assembly
process and reduces assembly
related performance variations
and costs. This MMIC is a cost
effective alternative to hybrid
(discrete-FET) amplifiers that
require complex tuning and
assembly processes.
HMMC-5040
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
V
D1, 2-3-4
Drain Supply Voltages
V
5
V
G1, 2-3-4
Gate Supply Voltages
V
-3.0
0.5
I
DD
Total Drain Current
mA
400
P
in
RF Input Power
dBm
21
T
ch
Channel Temperature
[2]
C
+160
T
A
Backside Ambient Temp.
C
-55
+75
T
STG
Storage Temperature
C
-65
+165
T
max
Maximum Assembl
y Temp.
C
+300
Note:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
2. Refer to DC Specifications/Physical Properties table for derating information.
Chip Size:
1720 x 760
m (67.7 x 29.9 mils)
Chip Size Tolerance:
10
m (
0.4 mils)
Chip Thickness:
127
15
m (5.0
0.6 mils)
Pad Dimensions:
80 x 80
m (3.1 x 3.1 mils)
5965-5444E
6-59
HMMC-5040 DC Specifications/Physical Properties
[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
V
D1, 2-3-4
Drain Supply Operating Voltages
V
2
4.5
5
I
D1
First Stage Drain Supply Current
mA
55
(V
DD
= 4.5 V, V
G1
= -0.6 V)
I
D2-3-4
Total Drain Supply Current for Stages 2, 3, and 4
mA
24.5
(V
DD
= 4.5 V, V
GG
= -0.6 V)
V
G1, 2, 3-4
Gate Supply Operating Voltages (I
DD
= 300 mA)
V
-0.6
V
p
Pinch-off Voltage (V
DD
= 4.5 V, I
DD
10 mA)
V
-2
-1.2
-0.8
ch-bs
Thermal Resistance
[2]
C/W
62
(Channel-to-Backside @ T
ch
= 160
C)
T
ch
Channel Temperature
[3]
(T
A
= 125
C, MTTF > 10
6
hrs,
C
160
V
DD
= 4.5 V, I
DD
= 300 mA)
Notes:
1. Backside ambient operating temperature T
A
= 25
C unless otherwise noted.
2. Thermal resistance (
C/Watt) at a channel temperature T (
C) can be estimated using the equation:
(T)
62 x [T(
C)+ 273] / [160
C + 273].
3. Derate MTTF by a factor of two for every 8
C above T
ch
.
HMMC-5040 RF Specifications,
T
A
= 25
C, V
DD
= 4.5 V, I
DD
= 300 mA, Z
o
= 50
Broadband
Narrow Band
Symbol
Parameters/Conditions
Specifications
Performance
Units
Min.
Typ.
Max.
Typical
BW
Operating Bandwidth
GHz
21
2044
40
2124
2729
3740
S
21
Small Signal Gain
dB
20
22
25
23
22
S
21
Small Signal Gain Flatness
dB
1.5
1
0.75
0.3
(RL
in
)
MIN
Minimum Input Return Loss
dB
8
10
9
10
14
(RL
out
)
MIN
Minimum Output Return Loss
dB
8
10
10
11
12
S
12
Reverse Isolation
dB
54
54
54
54
P
-1dB
Output Power
dBm
18
18
18
18
(@ 1dB Gain Compression)
P
sat
Saturated Output Power
dBm
20
21
21
21
21
@ 3 dB Gain Compression
6-60
HMMC-5040 Applications
The HMMC-5040 broadband
amplifier is designed for both
military (35 GHz) applications
and wireless communication
systems that operate at 23, 28,
and 38 GHz. It is also suitable for
use as a frequency multiplier due
to excellent below-band input
return loss and high gain.
Biasing and Operation
The recommended DC bias
condition is with all drains
connected to single 4.5 volt (or
less) supply and all gates con-
nected to an adjustable negative
voltage supply as shown in Figure
12a. The gate voltage is adjusted
for a total drain supply current of
typically up to 300 mA. Figures 4,
5, 8, and 9 can be used to help
estimate the minimum drain
voltage and current necessary for
a given RF gain and output
power.
The second, third, and fourth
stage DC drain bias lines are
connected internally (Figure 1)
and therefore require only a
single bond wire. An additional
bond wire is needed for the first
stage DC drain bias, V
D1
.
Only the third and fourth stage
DC gate bias lines are connected
internally. A total of three DC
gate bond wires are required: one
for V
G1
, one for V
G2
, and one for
the V
G3
-to-V
G4
connection.
The RF input has matching
circuitry that creates a 50 ohm
DC and RF path to ground. A DC
blocking capacitor should be
used in the RF input transmission
line. Any DC voltage applied to
the RF input must be maintained
below 1 volt. The RF output is
AC-coupled.
No ground wires are needed since
ground connections are made
with plated through-holes to the
backside of the device.
The HMMC-5040 can also be used
to double, triple, or quadruple the
frequency of input signals. Many
bias schemes may be used to
generate and amplify desired
harmonics within the device. The
information given here is
intended to be used by the
customer as a starting point for
such applications. Optimum
conversion efficiency is obtained
with approximately 14 dBm input
drive level.
As a doubler, the device can
multiply an input signal in the
10-20 GHz frequency range up to
20-40 GHz with conversion gain
for output frequencies exceeding
30 GHz. Similarly, 5-10 GHz
signals can be quadrupled to
20-40 GHz with some conversion
loss. Frequency doubling or
quadrupling is accomplished by
operating the first gain stage at
pinch-off (V
G1
= V
P
-1.2 volts).
Stages 2, 3, and 4 are biased for
normal amplification. The assem-
bly diagram shown in Figure 12b
can be used.
To operate the device as a
frequency tripler the drain
voltage can be reduced to
approximately 2.5 volts and the
gate voltage can be set at about
-0.4 volts or adjusted to minimize
second harmonics if needed.
Either of Figures 12a or Figure
12b can be used.
Contact your local HP sales
representative for additional
information concerning multiplier
performance and operating
conditions.
Assembly Techniques
Solder die attach using a fluxless
gold-tin (AuSn) solder preform is
the recommended assembly
method. A conductive epoxy such
as ABLEBOND
71-1LM1 or
ABLEBOND
36-2 may also be
used for die attaching provided
the Absolute Maximum Ratings
are not exceeded. The device
should be attached to an electri-
cally conductive surface to
complete the DC and RF ground
paths. The backside metallization
on the device is gold.
It is recommended that the RF
input and output connections be
made using either 500 lines/inch
(or equivalent) gold wire mesh.
The RF connections should be
kept as short as possible to
minimize inductance. The DC
bias supply wires can be 0.7 mil
diameter gold.
Thermosonic wedge is the
preferred method for wire
bonding to the gold bond pads.
Mesh wires can be attached using
a 2 mil round tacking tool and a
tool force of approximately
22 grams with an ultrasonic
power of roughly 55 dB for a
duration of 76
8 msec. A guided-
wedge at an ultrasonic power
level of 64 dB can be used for the
0.7 mil wire. The recommended
wire bond stage temperature is
150
2
C.
For more detailed information
see HP application note #999
"GaAs MMIC Assembly and
Handling Guidelines."
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
6-61
Figure 1. HMMC-5040 Simplified Schematic Diagram.
IN
V
G1
50
OUT
V
G3
V
G4
MATCHING
MATCHING
MATCHING
MATCHING
MATCHING
V
D1
V
G2
V
D2
V
D3
V
D4
HMMC-5040 Typical Performance
20
24
28
32
36
40
FREQUENCY (GHz)
V
DD
= 4.5 V, I
DD
= 300 mA
Figure 2. Typical Gain and Isolation
vs. Frequency.
[1]
30
26
22
18
14
10
0
10
20
30
40
50
60
70
SMALL-SIGNAL GAIN (dB)
REVERSE ISOLATION (dB)
Gain
Isolation
20
24
28
32
36
40
FREQUENCY (GHz)
V
DD
= 4.5 V, I
DD
= 300 mA
Figure 3. Typical Input and Output
Return Loss vs. Frequency.
[1]
0
5
10
15
20
25
0
5
10
15
20
25
INPUT RETURN LOSS (dB)
OUTPUT RETURN LOSS (dB)
Input
Output
Figure 4. Broadband Gain as a
Function of Drain Current vs.
Frequency with V
DD
= 4.5 V.
[1]
30
24
18
12
6
0
SMALL-SIGNAL GAIN (dB)
10
18
26
34
42
50
FREQUENCY
(GHz)
V
DD
= 4.5 V
Spec Range
21 40 GHz
300 mA
250 mA
200 mA
150 mA
100 mA
Figure 5. Broadband Gain as a
Function of Drain Current vs
Frequency with V
DD
= 3 V.
[1]
30
24
18
12
6
0
SMALL-SIGNAL GAIN (dB)
10
18
26
34
42
50
FREQUENCY
(GHz)
V
DD
= 3 V
Spec Range
21 40 GHz
300 mA
250 mA
200 mA
150 mA
100 mA
Note:
1. Wafer-probed measurements
6-62
HMMC-5040 Typical Performance,
continued
60
30
0
30
60
90
OPERATING TEMPERATURE (
C)
V
DD
= 4.5 V, I
DD
= 300 mA @ T
A
= 25
C
Figure 6. Small-Signal Gain
[3]
and
Compressed Power
[1]
vs. Temperature.
35
30
25
20
15
10
40
35
30
25
20
15
SMALL-SIGNAL GAIN (dB)
COMPRESSED OUTPUT POWER (dBm)
Gain
Power
22 GHz
28 GHz
38 GHz
25 GHz
30 GHz
35 GHz
40 GHz
20
24
28
32
36
40
FREQUENCY (GHz)
Figure 7. Noise Figure vs. Frequency.
20
16
12
8
4
0
NOISE FIGURE (dB)
V
DD
= 4.5 V
I
DD
= 300 mA
V
DD
= 2.0 V
I
DD
= 170 mA
V
DD
= 3.0 V
I
DD
= 130 mA
Notes:
1. Output power into 50
with 2 dBm input power. Wafer-probed measurements.
2. Wafer-probed measurements.
3. Measurements taken on a device mounted in a connectorized package calibrated at the connector terminals.
0.06 dB/
C
100
300
200
TOTAL DRAIN CURRENT, I
DD
(mA)
V
DD
= 4.5 V
Figure 8. Output Power
[1]
and
Efficiency vs. Drain Current with
V
DD
= 4.5 V.
23
21
19
17
15
13
25
21
17
13
9
5
OUTPUT POWER, P
SAT
(dBm)
POWER-ADDED EFFECIENCY @ P
SAT
(%)
Efficiency
Power
23 GHz
28 GHz
38 GHz
42 GHz
100
300
200
TOTAL DRAIN CURRENT, I
DD
(mA)
V
DD
= 3 V
Figure 9. Output Power
[1]
and
Efficiency vs. Drain Current with
V
DD
= 3 V.
23
21
19
17
15
13
25
21
17
13
9
5
OUTPUT POWER, P
SAT
(dBm)
POWER-ADDED EFFECIENCY @ P
SAT
(%)
Power
23 GHz
28 GHz
38 GHz
42 GHz
6
10
14
18
22
26
OUTPUT POWER (dBm)
V
DD
= 4.5 V, I
DD
= 300 mA, f = 40GHz
Figure 10. Gain Compression and
Efficiency Characteristics.
[2]
30
26
22
18
14
10
20
25
10
5
0
GAIN (dB)
POWER-ADDED EFFICIENCY (%)
Gain
added
20
24
28
32
36
40
FREQUENCY (GHz)
V
DD
= 4.5 V, I
DD
= 300 mA
Figure 11. Output Power and Gain vs.
Frequency Characteristics.
[2]
30
26
22
18
14
10
30
26
22
18
14
10
OUTPUT POWER, P
1dB
AND P
SAT
(dBm)
SMALL-SIGNAL GAIN (dB)
P
SAT
Gain
P
1dB
Efficiency