Surface Mount RF Schottky
Barrier Diodes
Technical Data
HSMS-282x Series
Features
Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
Low FIT (Failure in Time)
Rate*
Six-sigma Quality Level
Single, Dual and Quad
Versions
Unique Configurations in
Surface Mount SOT-363
Package
increase flexibility
save board space
reduce cost
HSMS-282K Grounded
Center Leads Provide up to
10 dB Higher Isolation
Matched Diodes for
Consistent Performance
Better Thermal Conductivity
for Higher Power Dissipation
Lead-free Option Available
*
For more information see the
Surface Mount Schottky
Reliability Data Sheet.
Description/Applications
These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. Typical
applications of these Schottky
diodes are mixing, detecting,
switching, sampling, clamping,
Package Lead Code Identification, SOT-23/SOT-143
(Top View)
COMMON
CATHODE
#4
UNCONNECTED
PAIR
#5
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
1
2
3
1
2
3
4
RING
QUAD
#7
1
2
3
4
BRIDGE
QUAD
#8
1
2
3
4
CROSS-OVER
QUAD
#9
1
2
3
4
1
2
3
1
2
3
1
2
3
Package Lead Code Iden-
tification, SOT-323
(Top View)
Package Lead Code Iden-
tification, SOT-363
(Top View)
COMMON
CATHODE
F
COMMON
ANODE
E
SERIES
C
SINGLE
B
COMMON
CATHODE QUAD
M
UNCONNECTED
TRIO
L
BRIDGE
QUAD
P
COMMON
ANODE QUAD
N
RING
QUAD
R
1
2
3
6
5
4
HIGH ISOLATION
UNCONNECTED PAIR
K
1
2
3
6
5
4
1
2
3
6
5
4
1
2
3
6
5
4
1
2
3
6
5
4
1
2
3
6
5
4
and wave shaping. The
HSMS-282x series of diodes is the
best all-around choice for most
applications, featuring low series
resistance, low forward voltage at
all current levels and good RF
characteristics.
Note that Agilent's manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
2
Electrical Specifications T
C
= 25
C, Single Diode
[4]
Maximum
Maximum
Minimum
Maximum
Forward
Reverse
Typical
Part
Package
Breakdown
Forward
Voltage
Leakage
Maximum
Dynamic
Number
Marking
Lead
Voltage
Voltage
V
F
(V) @
I
R
(nA) @ Capacitance Resistance
HSMS
[5]
Code
Code
Configuration
V
BR
(V)
V
F
(mV)
I
F
(mA)
V
R
(V)
C
T
(pF)
R
D
(
)
[6]
2820
C0
[3]
0
Single
15
340
0.5
10
100
1
1.0
12
2822
C2
[3]
2
Series
2823
C3
[3]
3
Common Anode
2824
C4
[3]
4
Common Cathode
2825
C5
[3]
5
Unconnected Pair
2827
C7
[3]
7
Ring Quad
[5]
2828
C8
[3]
8
Bridge Quad
[5]
2829
C9
[3]
9
Cross-over Quad
282B
C0
[7]
B
Single
282C
C2
[7]
C
Series
282E
C3
[7]
E
Common Anode
282F
C4
[7]
F
Common Cathode
282K
CK
[7]
K
High Isolation
Unconnected Pair
282L
CL
[7]
L
Unconnected Trio
282M
HH
[7]
M
Common Cathode Quad
282N
NN
[7]
N
Common Anode Quad
282P
CP
[7]
P
Bridge Quad
282R
OO
[7]
R
Ring Quad
Test Conditions
I
R
= 100
A I
F
= 1 mA
[1]
V
F
= 0 V
I
F
= 5 mA
f = 1 MHz
[2]
Notes:
1.
V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (
) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled "Quad Capacitance."
6. R
D
= R
S
+ 5.2
at 25C and I
f
= 5 mA.
7. Package marking code is laser marked.
Absolute Maximum Ratings
[1]
T
C
= 25
C
Symbol
Parameter
Unit
SOT-23 /SOT-143 SOT-323 /SOT-363
I
f
Forward Current (1
s Pulse) Amp
1
1
P
IV
Peak Inverse Voltage
V
15
15
T
j
Junction Temperature
C
150
150
T
stg
Storage Temperature
C
-65 to 150
-65 to 150
jc
Thermal Resistance
[2]
C/W
500
150
Notes:
1.
Operation in excess of any one of these conditions may result in permanent damage to
the device.
2.
T
C
= +25
C, where T
C
is defined to be the temperature at the package pins where
contact is made to the circuit board.
Notes:
1.
Package marking provides
orientation and identification.
2.
See "Electrical Specifications" for
appropriate package marking.
Pin Connections and
Package Marking
GUx
1
2
3
6
5
4
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as "CM", and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent capaci-
tances can then be calculated by
the formulas given below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
1
1
+ +
C
2
C
3
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter
Units
HSMS-282x
B
V
V
15
C
J0
pF
0.7
E
G
eV
0.69
I
BV
A
1E - 4
I
S
A
2.2E - 8
N
1.08
R
S
6.0
P
B
V
0.65
P
T
2
M
0.5
C
j
R
j
R
S
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature,
K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit Model
Diode Chip
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
4
Typical Performance, T
C
= 25
C (unless otherwise noted), Single Diode
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
0
0.10
0.20
0.30
0.50
0.40
I
F
FORWARD CURRENT (mA)
V
F
FORWARD VOLTAGE (V)
0.01
10
1
0.1
100
T
A
= +125
C
T
A
= +75
C
T
A
= +25
C
T
A
= 25
C
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
0
5
15
I
R
REVERSE CURRENT (nA)
V
R
REVERSE VOLTAGE (V)
10
1
1000
100
10
100,000
10,000
T
A
= +125
C
T
A
= +75
C
T
A
= +25
C
Figure 3. Total Capacitance vs.
Reverse Voltage.
0
2
8
6
C
T
CAPACITANCE (pF)
V
R
REVERSE VOLTAGE (V)
4
0
0.6
0.4
0.2
1
0.8
Figure 4. Dynamic Resistance vs.
Forward Current.
0.1
1
100
R
D
DYNAMIC RESISTANCE (
)
I
F
FORWARD CURRENT (mA)
10
1
10
1000
100
V
F
- FORWARD VOLTAGE (V)
Figure 5. Typical V
f
Match, Series Pairs
and Quads at Mixer Bias Levels.
30
10
1
0.3
30
10
1
0.3
I
F
- FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
F
(Left Scale)
V
F
(Right Scale)
V
F
- FORWARD VOLTAGE (V)
Figure 6. Typical V
f
Match, Series Pairs
at Detector Bias Levels.
100
10
1
1.0
0.1
I
F
- FORWARD CURRENT (
A)
V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
0.10
0.15
0.20
0.25
I
F
(Left Scale)
V
F
(Right Scale)
Figure 7. Typical Output Voltage vs.
Input Power, Small Signal Detector
Operating at 850 MHz.
-40
-30
18 nH
RF in
3.3 nH
100 pF
100 K
HSMS-282B Vo
0
V
O
OUTPUT VOLTAGE (V)
P
in
INPUT POWER (dBm)
-10
-20
0.001
0.01
1
0.1
-25
C
+25
C
+75
C
DC bias = 3
A
Figure 8. Typical Output Voltage vs.
Input Power, Large Signal Detector
Operating at 915 MHz.
-20
-10
RF in
100 pF
4.7 K
68
HSMS-282B
Vo
30
V
O
OUTPUT VOLTAGE (V)
P
in
INPUT POWER (dBm)
10
20
0
1E-005
0.0001
0.001
10
0.1
1
0.01
+25
C
LOCAL OSCILLATOR POWER (dBm)
Figure 9. Typical Conversion Loss vs.
L.O. Drive, 2.0 GHz (Ref AN997).
CONVERSION LOSS (dB)
12
10
9
8
7
6
2
0
6
8
10
4
5
Applications Information
Product Selection
Agilent's family of surface mount
Schottky diodes provide unique
solutions to many design prob-
lems. Each is optimized for
certain applications.
The first step in choosing the right
product is to select the diode type.
All of the products in the
HSMS-282x family use the same
diode chip they differ only in
package configuration. The same
is true of the HSMS-280x, -281x,
285x, -286x and -270x families.
Each family has a different set of
characteristics, which can be
compared most easily by consult-
ing the SPICE parameters given
on each data sheet.
The HSMS-282x family has been
optimized for use in RF applica-
tions, such as
DC biased small signal
detectors to 1.5 GHz.
Biased or unbiased large
signal detectors (AGC or
power monitors) to 4 GHz.
Mixers and frequency
multipliers to 6 GHz.
The other feature of the
HSMS-282x family is its
unit-to-unit and lot-to-lot consis-
tency. The silicon chip used in this
series has been designed to use
the fewest possible processing
steps to minimize variations in
diode characteristics. Statistical
data on the consistency of this
product, in terms of SPICE
parameters, is available from
Agilent.
For those applications requiring
very high breakdown voltage, use
the HSMS-280x family of diodes.
Turn to the HSMS-281x when you
need very low flicker noise. The
HSMS-285x is a family of zero bias
detector diodes for small signal
applications. For high frequency
detector or mixer applications,
use the HSMS-286x family. The
HSMS-270x is a series of specialty
diodes for ultra high speed
clipping and clamping in digital
circuits.
Schottky Barrier Diode Char-
acteristics
Stripped of its package, a
Schottky barrier diode chip
consists of a metal-semiconductor
barrier formed by deposition of a
metal layer on a semiconductor.
The most common of several
different types, the passivated
diode, is shown in Figure 10,
along with its equivalent circuit.
R
S
is the parasitic series resis-
tance of the diode, the sum of the
bondwire and leadframe resis-
tance, the resistance of the bulk
layer of silicon, etc. RF energy
coupled into R
S
is lost as heat--it
does not contribute to the recti-
fied output of the diode. C
J
is
parasitic junction capacitance of
the diode, controlled by the thick-
ness of the epitaxial layer and the
diameter of the Schottky contact.
R
j
is the junction resistance of the
diode, a function of the total
current flowing through it.
RS
Rj
Cj
;;
METAL
SCHOTTKY JUNCTION
PASSIVATION
PASSIVATION
N-TYPE OR P-TYPE EPI LAYER
N-TYPE OR P-TYPE SILICON SUBSTRATE
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
8.33 X 10
-5
n T
R
j
= = R
V
R
s
I
S
+ I
b
0.026
at 25C
I
S
+ I
b
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in
K
I
S
= saturation current (see
table of SPICE parameters)
I
b
= externally applied bias
current in amps
R
v
= sum of junction and series
resistance, the slope of the
V-I curve
I
S
is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5
A for very low
barrier diodes.
The Height of the Schottky
Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
V - IR
S
I = I
S
(e
1)
0.026
On a semi-log plot (as shown in
the Agilent catalog) the current
graph will be a straight line with
inverse slope 2.3 X 0.026 = 0.060
volts per cycle (until the effect of
Figure 10. Schottky Diode Chip.
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