Document Outline
- HSMS-286x Series
- Features
- Package Lead Code Identification (top view)
- Description
- Pin Connections and Package Marking
- DC Electrical Specifications
- RF Electrical Specifications
- Absolute Maximum Ratings
- Equivalent Linear Circuit Model
- SPICE Parameters
- Typical Parameters
- Applications Information
- Introduction
- Schottky Barrier Diode Characteristics
- The Height of the Schottky Barrier
- Measuring Diode Linear Parameters
- Detector Circuits
- 915 MHz Detector Circuit
- 2.45 GHz Detector Circuit
- 5.8 GHz Detector Circuit
- Voltage Doublers
- The Virtual Battery
- Temperature Compensation
- Six Lead Circuits
- Thermal Considerations
- Diode Burnout
- Assembly Instructions
- SOT-323 PCB Footprint
- SMT Assembly
- Package Dimensions
- Outline 23
- Outline 143
- Outline SOT-323
- Outline SOT-363
- Part Number Ordering Information
- Device Orientation
- Tape Dimensions and Product Orientation
Surface Mount Microwave
Schottky Detector Diodes
Technical Data
HSMS-286x Series
SOT-23/ SOT-143 Package
Lead Code Identification
(top view)
Description
Agilent's HSMS-286x family of DC
biased detector diodes have been
designed and optimized for use
from 915 MHz to 5.8 GHz. They
are ideal for RF/ID and RF Tag
applications as well as large
signal detection, modulation, RF
to DC conversion or voltage
doubling.
Available in various package
configurations, this family of
detector diodes provides low cost
solutions to a wide variety of
design problems. Agilent's
manufacturing techniques assure
that when two or more diodes are
mounted into a single surface
mount package, they are taken
from adjacent sites on the wafer,
assuring the highest possible
degree of match.
COMMON
CATHODE
#4
UNCONNECTED
PAIR
#5
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
1
2
3
1
2
3
4
1
2
3
1
2
3
1
2
3
SOT-323 Package Lead
Code Identification
(top view)
SERIES
C
SINGLE
B
1
2
3
1
2
3
COMMON
CATHODE
F
COMMON
ANODE
E
1
2
3
1
2
3
Features
Surface Mount SOT-23/
SOT-143 Packages
Miniature SOT-323 and
SOT-363 Packages
High Detection Sensitivity:
up to 50 mV/
W at 915 MHz
up to 35 mV/
W at 2.45 GHz
up to 25 mV/
W at 5.80 GHz
Low FIT (Failure in Time)
Rate*
Tape and Reel Options
Available
Unique Configurations in
Surface Mount SOT-363
Package
increase flexibility
save board space
reduce cost
HSMS-286K Grounded
Center Leads Provide up to
10 dB Higher Isolation
Matched Diodes for
Consistent Performance
Better Thermal
Conductivity for Higher
Power Dissipation
* For more information see the Surface
Mount Schottky Reliability Data Sheet.
2
SOT-23/SOT-143 DC Electrical Specifications, T
C
= +25
C, Single Diode
Part
Package
Typical
Number
Marking
Lead
Forward Voltage
Capacitance
HSMS-
Code
[1]
Code
Configuration
V
F
(mV)
C
T
(pF)
2860
T0
0
Single
250 Min.
350 Max.
0.30
2862
T2
2
Series Pair
[2,3]
2863
T3
3
Common Anode
[2,3]
2864
T4
4
Common Cathode
[2,3]
2865
T5
5
Unconnected Pair
[2,3]
Test Conditions
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
Notes:
1. Package marking code is in white.
2.
V
F
for diodes in pairs is 15.0 mV maximum at 1.0 mA.
3.
C
T
for diodes in pairs is 0.05 pF maximum at 0.5 V.
SOT-363 Package Lead
Code Identification
(top view)
BRIDGE
QUAD
P
UNCONNECTED
TRIO
L
RING
QUAD
R
1
2
3
6
5
4
1
2
3
6
5
4
1
2
3
6
5
4
HIGH ISOLATION
UNCONNECTED PAIR
K
1
2
3
6
5
4
Pin Connections and
Package Marking
PLx
1
2
3
6
5
4
Notes:
1. Package marking provides orienta-
tion and identification.
2. The first two characters are the
package marking code. The third
character is the date code.
SOT-323/SOT-363 DC Electrical Specifications, T
C
= +25
C, Single Diode
Part
Package
Typical
Number
Marking
Lead
Forward Voltage
Capacitance
HSMS-
Code
[1]
Code
Configuration
V
F
(mV)
C
T
(pF)
286B
T0
B
Single
250 Min.
350 Max.
0.25
286C
T2
C
Series Pair
[2,3]
286E
T3
E
Common Anode
[2,3]
286F
T4
F
Common Cathode
[2,3]
286K
TK
K
High Isolation
Unconnected Pair
286L
TL
L
Unconnected Trio
286P
TP
P
Bridge Quad
286R
ZZ
R
Ring Quad
Test Conditions
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
Notes:
1. Package marking code is laser marked.
2.
V
F
for diodes in trios and quads is 15.0 mV maximum at 1.0 mA.
3.
C
T
for diodes in trios and quads is 0.05 pF maximum at 0.5 V.
3
ESD WARNING:
Handling Precautions
Should Be Taken To Avoid
Static Discharge.
RF Electrical Specifications, T
C
= +25
C, Single Diode
Part
Typical Tangential Sensitivity
Typical Voltage Sensitivity
Typical Video
Number
TSS (dBm) @ f =
(mV/
W) @ f =
Resistance
HSMS-
915 MHz
2.45 GHz
5.8 GHz
915 MHz
2.45 GHz
5.8 GHz
RV (K
)
2860
57
56
55
50
35
25
5.0
2862
2863
2864
2865
286B
286C
286E
286F
286K
286L
286P
286R
Test
Video Bandwidth = 2 MHz
Power in = 40 dBm
I
b
= 5
A
Conditions
I
b
= 5
A
R
L
= 100 K
, I
b
= 5
A
Absolute Maximum Ratings, T
C
= +25
C, Single Diode
Symbol
Parameter
Unit
Absolute Maximum
[1]
SOT-23/143 SOT-323/363
P
IV
Peak Inverse Voltage
V
4.0
4.0
T
J
Junction Temperature
C
150
150
T
STG
Storage Temperature
C
-65 to 150
-65 to 150
T
OP
Operating Temperature
C
-65 to 150
-65 to 150
jc
Thermal Resistance
[2]
C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. T
C
= +25
C, where T
C
is defined to be the temperature at the package
pins where contact is made to the circuit board.
4
Equivalent Linear Circuit Model,
Diode chip
SPICE Parameters
Parameter
Units
Value
B
V
V
7.0
C
J0
pF
0.18
E
G
eV
0.69
I
BV
A
1 E - 5
I
S
A
5 E - 8
N
1.08
R
S
6.0
P
B
(VJ)
V
0.65
P
T
(XTI)
2
M
0.5
C
j
R
j
R
S
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature,
K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-286x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
5
Typical Parameters, Single Diode
1
10
100
1
10
FORWARD CURRENT
(
A)
FORWARD VOLTAGE DIFFERENCE
(mV)
VOLTAGE OUT (mV)
POWER IN (dBm)
0.05
0.15
0.20
0.10
0.25
FORWARD VOLTAGE (V)
Figure 2. Forward Voltage Match.
.01
.1
1
10
100
0.1 0.2 0.3 0.4
0.7
0.6
0.8 0.9
0.5
1.0
FORWARD CURRENT (mA)
FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperature.
1
10
100
1000
10,000
40
30
10
0
20
10
Figure 5. Dynamic Transfer
Characteristic as a Function of DC Bias.
Figure 3. +25
C Output Voltage vs.
Input Power, 3
A Bias.
Figure 4. +25
C Expanded Output
Voltage vs. Input Power. See Figure 3.
5
35
30
40
10
15
20
25
.1
1
10
100
OUTPUT VOLTAGE (mV)
BIAS CURRENT (
A)
Figure 6. Voltage Sensitivity as a
Function of DC Bias Current.
T
A
= 55
C
T
A
= +25
C
T
A
= +85
C
I
F
(left scale)
V
F
(right scale)
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R
L
= 100 K
20
A
5
A
10
A
Input Power =
30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R
L
= 100 K
VOLTAGE OUT (mV)
-50
0.1
POWER IN (dBm)
-30
-20
10000
10
1
-40
0
100
-10
1000
R
L
= 100 K
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
2.45 GHz
VOLTAGE OUT (mV)
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30
R
L
= 100 K
2.45 GHz
915 MHz
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
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