1-204
HSMD-TX00
HSME-TX00
HSMG-TX00
HSMH-TX00
HSMS-TX00
HSMY-TX00
Device Selection Guide
DH AS
High
High
AlGaAs
Efficiency
Performance
Emerald
Red
Red
Orange
Yellow
Green
Green
HSMH-
HSMS-
HSMD-
HSMY-
HSMG-
HSME-
Description
T400
T400
T400
T400
T400
T400
12 mm Tape, 7" Reel,
2000 Devices
T500
T500
T500
T500
T500
T500
12 mm Tape, 13" Reel,
8000 Devices
T600
T600
T600
T600
T600
T600
8 mm Tape, 7" Reel,
2000 Devices
T700
T700
T700
T700
T700
T700
8 mm Tape, 13" Reel,
8000 Devices
Surface Mount LED Indicator
Technical Data
Features
Compatible with Automatic
Placement Equipment
Compatible with Infrared
and Vapor Phase Reflow
Solder Processes
Packaged in 12 mm or 8 mm
tape on 7" or 13" Diameter
Reels
EIA Standard Package
Low Package Profile
Nondiffused Package
Excellent for Backlighting
and Coupling to Light Pipes
Description
These solid state surface mount
indicators are designed with a flat
top and sides to be easily handled
by automatic placement
equipment. A glue pad is provided
for adhesive mounting processes.
They are compatible with
convective IR and vapor phase
reflow soldering and conductive
epoxy attachment processes.
The package size and configura-
tion conform to the EIA-535
BAAC standard specification for
case size 3528 tantalum
capacitors. The folded leads
H
5964-9359E
permit dense placement and
provide an external solder joint
for ease of inspection.
These devices are nondiffused,
providing high intensity for
applications such as backlighting,
light pipe illumination, and front
panel indication.
1-205
Package Dimensions
hp
HEWLETT
PACKARD
CATHODE
PITCH: 4 mm (0.157 IN.)
USER FEED
DIRECTION
CARRIER TAPE WIDTH:
12 mm (0.472 IN.) OR 8 mm (0.315 IN.)
REEL DIAMETER:
178 mm (7 IN.) OR 330 mm (13 IN.)
Tape and Reel
Specifications
Hewlett Packard surface mount
LEDs are packaged tape and reel
in accordance with EIA-481A,
Taping of Surface Mount
Components for Automatic
Placement
. This packaging
system is compatible with tape-
fed automatic pick and place
systems. Each reel is sealed in a
vapor barrier bag for added
protection. Bulk packaging in
vapor barrier bags is available
upon special request.
NOM.
2.2
(0.087)
3.5
0.2
(0.138
0.008)
NOM.
3.1
(0.122)
NOM.
2.7
(0.106)
2.8
0.2
(0.110
0.008)
2.2
0.1
(0.087
0.004)
MIN.
0.7
(0.028)
1.9
0.2
(0.075
0.008)
0.8
0.3
(0.031
0.012)
(2 PLACES)
1.3
(0.050)
MIN.
0.1
(0.004)
NOM.
CATHODE NOTCH
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES).
2. THE LEADS ARE COPPER ALLOY, 85% Sn/15% Pb PLATING.
1-206
Absolute Maximum Ratings at T
A
= 25
C
DH AS
High
High
AlGaAs
Efficiency
Perf.
Emerald
Parameter
Red
Red
Orange
Yellow
Green
Green
Units
DC Forward
30
30
30
30
30
30
mA
Current
[1]
Peak Forward
300
90
90
60
90
90
mA
Current
[2]
Average
20
25
25
20
25
25
mA
Forward
Current
[2]
LED Junction
95
C
Temperature
Transient
Forward
Current
[3]
(10
s Pulse)
500
mA
Reverse Voltage
5
V
(I
R
= 100 mA)
Operating
-40 to +85
-20 to +85
C
Temperature
Range
Storage
-40 to +85
C
Temperature
Range
Reflow Soldering
Temperature
Convective IR
235
C Peak, above 185
C for 90 seconds.
Vapor Phase
215
C for 3 minutes.
Notes:
1. Derate dc current linearly from 50
C: For AlGaAs red, high efficiency red, and green devices at 0.67 mA/
C. For yellow devices at
0.44 mA/
C.
2. Refer to Figure 5 showing Maximum Tolerable Peak Current vs. Pulse duration to establish pulsed operating conditions.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
wire bond. The device should not be operated at peak currents above the Absolute Maximum Peak Forward Current.
1-207
DH AS AlGaAs Red HSMH-TX00
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Luminous Intensity
I
v
9.0
17.0
mcd
I
F
= 10 mA
Forward Voltage
V
F
1.8
2.2
V
I
F
= 10 mA
Reverse Breakdown Voltage
V
R
5.0
15.0
V
I
R
= 100
A
Included Angle Between
Half Intensity Points
[1]
2
1/2
120
deg.
Peak Wavelength
PEAK
645
nm
Dominant Wavelength
[2]
d
637
nm
Spectral Line Half Width
1/2
20
nm
Speed of Response
s
30
ns
Time Constant, e
-t/
Capacitance
C
30
pF
V
F
= 0, f = 1 MHz
Thermal Resistance
R
J-pin
180
C/W
Junction-to-Cathode
Luminous Efficacy
[3]
v
80
lm/W
High Efficiency Red HSMS-TX00
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Luminous Intensity
I
v
2.0
6.0
mcd
I
F
= 10 mA
Forward Voltage
V
F
1.9
2.5
V
I
F
= 10 mA
Reverse Breakdown Voltage
V
R
5.0
30.0
V
I
R
= 100
A
Included Angle Between
Half Intensity Points
[1]
2
1/2
120
deg.
Peak Wavelength
PEAK
635
nm
Dominant Wavelength
[2]
d
626
nm
Spectral Line Half Width
1/2
40
nm
Speed of Response
s
90
ns
Time Constant, e
-t/
Capacitance
C
11
pF
V
F
= 0, f = 1 MHz
Thermal Resistance
R
J-pin
160
C/W
Junction-to-Cathode
Luminous Efficacy
[3]
v
145
lm/W
Notes:
1.
1/2
is the off-axis angle where the luminous intensity is half the on-axis value.
2. The dominant wavelength,
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= I
v
/
v
, where I
v
is the luminous intensity in
candelas and
v
is luminous efficacy in lumens/watt.
Electrical/Optical Characteristics at T
A
= 25
C
s
s
1-208
Orange HSMD-TX00
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Luminous Intensity
I
v
1.5
5.0
mcd
I
F
= 10 mA
Forward Voltage
V
F
1.9
2.5
V
I
F
= 10 mA
Reverse Breakdown Voltage
V
R
5.0
30.0
V
I
R
= 100
A
Included Angle Between
Half Intensity Points
[1]
2
1
/
2
120
deg.
Peak Wavelength
PEAK
600
nm
Dominant Wavelength
[2]
d
602
nm
Spectral Line Half Width
1/2
40
nm
Speed of Response
s
260
ns
Time Constant, e
-t/
Capacitance
C
4
pF
V
F
= 0, f = 1 MHz
Thermal Resistance
R
J-pin
160
C/W
Junction-to-Cathode
Luminous Efficacy
[3]
v
380
lm/W
Yellow HSMY-TX00
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Luminous Intensity
I
v
2.0
5.0
mcd
I
F
= 10 mA
Forward Voltage
V
F
2.0
2.5
V
I
F
= 10 mA
Reverse Breakdown Voltage
V
R
5.0
50.0
V
I
R
= 100
A
Included Angle Between
Half Intensity Points
[1]
2
1
/
2
120
deg.
Peak Wavelength
PEAK
583
nm
Dominant Wavelength
[2]
d
585
nm
Spectral Line Half Width
1/2
36
nm
Speed of Response
s
90
ns
Time Constant, e
-t/
Capacitance
C
15
pF
V
F
= 0, f = 1 MHz
Thermal Resistance
R
J-pin
160
C/W
Junction-to-Cathode
Luminous Efficacy
[3]
v
500
lm/W
Notes:
1.
1
/
2
is the off-axis angle where the luminous intensity is half the on-axis value.
2. The dominant wavelength,
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= I
v
/
v
, where I
v
is the luminous intensity in
candelas and
v
is luminous efficacy in lumens/watt.
s
s
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