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Электронный компонент: INA-01170

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6-87
Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
Features
Cascadable 50
Gain Block
Low Noise Figure:
1.7 dB Typical at 100 MHz
High Gain:
32.5 dB Typical at 100 MHz
3 dB Bandwidth:
DC to 500 MHz
Unconditionally Stable
(k>1)
Hermetic Gold-Ceramic
Surface Mount Package
INA-01170
70 mil Package
Description
The INA-01170 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
Typical Biasing Configuration
C
block
C
block
R
bias
(Required)
V
CC
> 8 V
V
d
= 5.5 V
RFC (Optional)
RF IN
RF OUT
4
1
2
3
amplifier housed in a hermetic, high
reliability package. It is designed for
narrow or wide bandwidth indus-
trial and military applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP's 10 GHz f
T
,
25 GHz f
MAX
, ISOSATTM-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
5965-9562E
6-88
INA-01170 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
50 mA
Power Dissipation
[2,3]
400 mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
65 to 200
C
Thermal Resistance
[2,4]
:
jc
= 140
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 7.1 mW/
C for T
C
> 144
C.
4. See MEASUREMENTS section
"Thermal Resistance" for more
information.
G
P
Power Gain (|S
21
|
2
)
f = 100 MHz
dB
30
32.5
35
G
P
Gain Flatness
f = 10 to 250 MHz
dB
0.5
f
3 dB
3 dB Bandwidth
[2]
MHz
500
ISO
Reverse Isolation (|S
12
|
2
)
f = 10 to 250 MHz
dB
39
Input VSWR
f = 10 to 250 MHz
1.6:1
Output VSWR
f = 10 to 250 MHz
1.5:1
NF
50
Noise Figure
f = 100 MHz
dB
2.0
2.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 100 MHz
dBm
11
IP
3
Third Order Intercept Point
f = 100 MHz
dBm
23
t
D
Group Delay
f = 100 MHz
psec
200
V
d
Device Voltage
V
4.0
5.5
7.0
dV/dT
Device Voltage Temperature Coefficient
mV/
C
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (G
P
).
INA-01170 Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
INA-01170 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
C, I
d
= 35 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.01
.09
20
32.8
43.65
2
38.4
.012
5
.17
1
1.17
0.05
.10
39
32.8
43.51
9
38.3
.012
17
.18
0
1.17
0.10
.13
65
32.6
42.82
18
38.3
.012
4
.18
1
1.17
0.15
.17
83
32.4
41.71
26
38.4
.012
17
.19
2
1.18
0.20
.21
96
32.1
40.41
35
38.6
.012
12
.19
3
1.18
0.25
.25
107
31.8
38.93
43
39.0
.011
26
.19
4
1.26
0.30
.28
115
31.5
37.38
50
39.0
.011
3
.20
5
1.26
0.40
.33
130
30.7
34.19
65
39.3
.011
21
.21
3
1.31
0.50
.37
140
29.9
31.13
78
39.2
.011
11
.22
0
1.35
0.60
.40
150
29.0
28.30
90
38.9
.011
22
.23
5
1.43
0.80
.43
164
27.4
23.48 112
38.5
.012
30
.24
19
1.52
1.0
.44
176
25.8
19.45 132
36.5
.015
32
.23
32
1.49
1.5
.44
165
21.8
12.37 179
33.6
.020
42
.19
69
1.75
2.0
.44
154
17.9
7.88
146
33.0
.022
42
.13
106
2.42
2.5
.46
148
14.6
5.36
121
30.6
.029
36
.12
151
2.63
3.0
.48
139
11.4
3.71
96
30.0
.032
45
.10
159
3.31
S
11
S
21
S
12
S
22
6-89
INA-01170 Typical Performance, T
A
= 25
C
(unless otherwise noted)
0
10
20
30
40
50
I
d
(mA)
I
d
(mA)
I
d
(mA)
0
4
6
2
8
V
d
(V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
NF (dB)
15
20
25
30
35
1.0
.01
.02
.05
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
G
p
(dB)
NF (dB)
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
A
= 25
C, I
d
= 35 mA.
Gain Flat to DC
T
MS
= +125
C
T
MS
= +25
C
T
MS
= 55
C
15
20
25
30
35
.01
.05
0.2
1.0
Figure 3. Power Gain vs. Current.
0.1 GHz
1.0 GHz
0.5 GHz
0.5
2.0
1.5
2.5
1.0
30
31
32
33
7
9
11
13
55
25
+25
+85
+125
.02
.05
0.1
0.5
0.2
1.0
.02
.05
0.1
0.5
0.2
1.0
NF (dB)
0
9
6
15
12
3
1.0
2.5
2.0
3.0
1.5
P
1 dB
(dBm)
P
1 dB
(dBm)
G
p
(mA)
TEMPERATURE (
C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.1 GHz, I
d
= 35 mA.
G
p
P
1 dB
NF
I
d
= 40 mA
I
d
= 35 mA
I
d
= 30 mA
I
d
= 30 to 40 mA
70 mil Package Dimensions
1
3
4
2
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.020
.508
.070
1.70
.495
.030
12.57
.76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
0.005
mm .xx =
0.13
mm
.040
1.02
.035
.89
.004
.002
.10
.05