Document Outline
- List of Figures
- 1. Power Gain vs. Frequency and Voltage
- 2. Noise Figure vs. Frequency and Voltage
- 3. Output Power for 1 dB Gain Compression vs. Frequency and Voltage
- 4. Gain vs. Frequency and Temperature
- 5. Noise Figure vs. Frequency and Temperature
- 6. Output Power for 1 dB Gain Compression vs. Frequency and Temperature
- 7. Input and Output VSWR vs. Frequency
- 8. Supply Current vs. Voltage and Temperature
- 9. Reference Planes
- 10. Basic Amplifier Application
- 11. Application Example
- Features
- Applications
- Equivalent Circuit (Simplified)
- SOT-143 Surface Mount Package
- Pin Connections and Package Marking
- Description
- Absolute Maximum Ratings
- INA-50311 Electrical Specifications [3] , T C = 25C, Z O = 50 W, V CC = 5 V
- INA-50311 Typical Scattering Parameters [3] , T C = 25C, Z O = 50 W, V CC = 5 V
- INA-50311 Typical Performance
- INA-50311 Applications Information
- INA-50311 Part Number Ordering Information
- Package Dimensions
6-146
Description
Hewlett-Packard's INA-50311 is a
Silicon monolithic amplifier that
offers excellent gain and noise
figure for applications to 1.0 GHz.
Packaged in a miniature SOT-143
package, it requires very little
board space.
The INA-50311 uses a topology
which is internally biased,
eliminating the need for external
components and providing
decreased sensitivity to ground
inductance.
The INA-50311 is fabricated using
HP's 30 GHz f
MAX
ISOSAT
TM
Silicon bipolar process which
uses nitride self-alignment sub-
micrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
1 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-50311
Features
Internally Biased, Single 5 V
Supply (17 mA)
19 dB Gain
3.6 dB NF
Unconditionally Stable
Applications
Amplifier for Cellular,
Cordless, Special Mobile
Radio, PCS, ISM, Wireless
LAN, and TV Tuner
Applications
SOT-143 Surface Mount
Package
RF
INPUT
VCC
RF
OUTPUT
GROUND
Pin Connections and
Package Marking
Equivalent Circuit (Simplified)
GND
OUTPUT
INPUT
VCC
N50
5963-6680E
6-147
Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
CC
Device Voltage, to ground
V
12
P
in
CW RF Input Power
dBm
+13
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
INA-50311 Electrical Specifications
[3]
,
T
C
= 25
C, Z
O
= 50
, V
CC
= 5 V
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
G
p
Power Gain (|S
21
|
2
)
f = 900 MHz
dB
16.5
19
NF
Noise Figure
f = 900 MHz
dB
3.6
P
1dB
Output Power at 1 dB Gain Compression
f = 900 MHz
dBm
0
IP
3
Third Order Intercept Point
f = 900 MHz
dBm
+10
VSWR
Input VSWR
f = 900 MHz
1.5
Output VSWR
f = 900 MHz
1.2
I
cc
Device Current
mA
17
22
d
Group Delay
f = 900 MHz
ps
320
INA-50311 Typical Scattering Parameters
[3]
,
T
C
= 25
C, Z
O
= 50
, V
CC
= 5 V
Freq.
S
11
S
21
S
12
S
22
K
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
Factor
0.05
0.12
-2
22.2
12.82
-6
-31.9
0.025
5
0.08
-11
1.68
0.10
0.12
-5
22.2
12.81
-12
-31.7
0.026
9
0.07
-24
1.63
0.20
0.12
-10
22.1
12.80
-24
-31.4
0.027
16
0.07
-44
1.59
0.30
0.14
-16
22.1
12.68
-36
-31.1
0.028
23
0.08
-62
1.55
0.40
0.15
-25
21.9
12.45
-49
-30.6
0.030
30
0.09
-78
1.48
0.50
0.16
-32
21.7
12.12
-61
-30.0
0.032
36
0.09
-94
1.44
0.60
0.17
-45
21.3
11.65
-74
-29.3
0.034
42
0.10
-107
1.42
0.70
0.18
-57
20.9
11.04
-87
-28.5
0.038
47
0.11
-120
1.36
0.80
0.19
-71
20.3
10.35
-99
-27.7
0.041
51
0.11
-131
1.35
0.90
0.19
-84
19.6
9.57
-111
-26.9
0.045
54
0.11
-141
1.34
1.00
0.20
-98
18.9
8.78
-122
-26.0
0.050
56
0.11
-149
1.32
1.20
0.21
-122
17.2
7.28
-143
-24.3
0.061
59
0.11
-163
1.31
1.40
0.21
-143
15.5
5.97
-161
-22.8
0.072
60
0.11
-172
1.33
1.60
0.21
-162
13.8
4.92
-176
-21.5
0.084
60
0.10
-179
1.37
1.80
0.22
-177
12.2
4.08
169
-20.4
0.095
58
0.10
175
1.42
2.00
0.22
170
10.7
3.43
157
-19.5
0.106
55
0.10
172
1.49
2.20
0.21
158
9.3
2.92
145
18.5
0.119
54
0.10
166
1.55
2.40
0.20
149
8.1
2.53
134
-17.9
0.127
50
0.11
163
1.65
2.50
0.20
146
7.5
2.37
129
-17.7
0.131
49
0.12
160
1.69
Note:
3. Reference plane per Figure 9 in Applications Information section.
Thermal Resistance
[2]
:
jc
= 550
C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
C
= 25
C (T
C
is defined to be the
temperature at the package pins where
contact is made to the circuit board).
6-148
INA-50311 Typical Performance,
T
C
= 25
C, Z
O
= 50
, V
CC
= 5 V
Figure 7. Input and Output VSWR vs.
Frequency.
Figure 8. Supply Current vs. Voltage
and Temperature.
Figure 1. Power Gain vs. Frequency
and Voltage.
Figure 2. Noise Figure vs. Frequency
and Voltage.
Figure 3. Output Power for 1 dB Gain
Compression vs. Frequency and
Voltage.
Figure 4. Gain vs. Frequency and
Temperature.
Figure 5. Noise Figure vs. Frequency
and Temperature.
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and
Temperature.
GAIN (dB)
0.1
0
FREQUENCY (GHz)
0.7
25
10
5
1.5
20
1.1
0.3
0.5
0.9
1.3
4.5 V
5.0 V
5.5 V
15
NOISE FIGURE (dB)
0.1
0
FREQUENCY (GHz)
0.7
5
2
1
1.5
4
1.1
0.3
0.5
0.9
1.3
3
5.5 V
5.0 V
4.5 V
P 1 dB (dBm)
0.1
-6
FREQUENCY (GHz)
0.7
6
0
-4
1.5
2
1.1
0.3
0.5
0.9
1.3
-2
4
5.5 V
5.0 V
4.5 V
GAIN (dB)
0.1
0
FREQUENCY (GHz)
0.7
25
10
5
1.5
20
1.1
0.3
0.5
0.9
1.3
+85
+25
-40
15
NOISE FIGURE (dB)
0.1
0
FREQUENCY (GHz)
0.7
5
2
1
1.5
4
1.1
0.3
0.5
0.9
1.3
+85
+25
-40
3
P 1 dB (dBm)
0.1
-3
FREQUENCY (GHz)
0.7
3
0
-2
1.5
1
1.1
0.3
0.5
0.9
1.3
-1
2
+85
+25
-40
VSWR (N:1)
0.1
1.0
FREQUENCY (GHz)
0.7
3.0
2.0
1.5
1.5
2.5
1.1
0.3
0.5
0.9
1.3
OUTPUT
INPUT
I CC
(mA)
0
0
VCC (V)
3
40
20
10
7
30
5
1
2
4
6
+85
+25
-40
6-149
INA-50311 Applications
Information
Introduction
INA-50311 is a silicon RF
integrated circuit amplifier with a
50
input and output. The
INA-50311 uses resistive feedback
to provide flat gain for low noise
or multi-purpose gain block
applications up to 1000 MHz.
Phase Reference Planes
The positions of the reference
planes used to measure
S-Parameters are shown in
Figure 9. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
Biasing
The INA-50311 is a voltage biased
device and operates from a single
+5 volt power supply with a
current drain of only 17 mA. All
bias circuitry is fully integrated
into the IC eliminating the need
for external DC components. The
supply voltage for the INA-50311
is fed in through a separate V
CC
pin of the device and does not
require RF isolation from the
input or output signal
connections.
REFERENCE
PLANES
TEST CIRCUIT
Figure 9. Reference Planes.
Operating Details
The INA-50311 is very easy to use.
The basic application of the
INA-50311 is shown in Figure 10.
DC blocking capacitors are placed
in series with the RF Input and
RF Output to isolate adjacent
circuits from the internal bias
voltages that are present at these
terminals. The values of the
blocking capacitors are deter-
mined by the lowest operating
frequency. The values for the
blocking capacitors are chosen
such that their reactances are
small relative to 50
. As an
example, use of the INA-50311 for
an application covering the 902 to
928 MHz band would require
blocking capacitors of at least
70 p F.
The V
CC
connection to the
amplifier must be RF bypassed by
placing a capacitor to ground
directly at the bias pin of the
package. Like the DC blocking
capacitors, the value of the V
CC
bypass capacitor is determined by
the lowest operating frequency
for the amplifier. This value may
typically be the same as that of
the DC blocking capacitors. If
long bias lines are used to con-
nect the amplifier to the V
CC
RF
OUTPUT
RF
INPUT
VCC
Cbypass
Cbypass
Cblock
Cblock
supply, additional bypass capac-
itors may be needed to prevent
resonances that would otherwise
result in undesirable gain
responses. A well-bypassed V
CC
line is also desirable to prevent
possible oscillations that may
occur due to feedback through
the bias line from other stages in
a cascade.
Adequate grounding is needed to
obtain maximum performance.
The ground pin of the INA-50311
should be connected directly to
RF ground by using plated
through holes (vias) near the
package terminals.
FR-4 or G-10 PCB material is a
good choice for most low cost
wireless applications. Typical
board thickness is 0.025 or 0.031
inches. The width of 50
microstriplines in these PCB
thicknesses is also convenient for
mounting chip components such
as the series DC blocking
capacitors.
Circuit Example
The amplifier example in Figure
11 shows a typical implementa-
tion of the INA-50311. The input
and output connections are
through 50
microstriplines with
DC blocking capacitors.
The V
CC
supply connection is RF
bypassed very close to the lead of
the RFIC. Provision is also made
for an additional bypass capacitor
on the V
CC
line near the edge of
the PCB.
Figure 10. Basic Amplifier
Application.
6-150
Figure 11. Application Example.
INA-50311 Part Number Ordering Information
Part Number
Devices per Container
Container
INA-50311-TR1
3,000
7" reel
INA-50311-BLK
100
Antistatic bag
Package Dimensions
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.10 (0.004)
0.013 (0.0005)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.92 (0.036)
0.78 (0.031)
XXX
PACKAGE
MARKING
CODE
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
0.54 (0.021)
0.37 (0.015)
0.60 (0.024)
0.45 (0.018)
2.04 (0.080)
1.78 (0.070)
TOP VIEW
0.15 (0.006)
0.09 (0.003)
0.69 (0.027)
0.45 (0.018)
END VIEW
SIDE VIEW
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