Document Outline
- List of Figures
- 1. Gain vs. Frequency and Voltage
- 2. Noise Figure vs. Frequency and Voltage
- 3. Output Power for 1 dB Gain Compression vs. Frequency and Voltage
- 4. Gain vs. Frequency and Temperature
- 5. Noise Figure vs. Frequency and Temperature
- 6. Output Power for P1dB Gain Compression vs. Frequency and Temperature
- 7. Input and Output VSWR vs. Frequency
- 8. Supply Current vs. Voltage and Temperature
- 9. Basic Amplifier Application
- 10. RF Layout for 50 W Input and Output
- 11. Assembled 50 W Amplifier
- 12. Measured Gain of 50 W Example Amplifier
- 13. Measured Input and Output Return Loss for 50 W Example Amplifier
- 14. Phase Reference Planes
- 15. PCB Pad Layout for INA-54063
- 16. Normal Distribution
- 17. Surface Mount Assembly Profile
- Features
- Applications
- Equivalent Circuit
- Surface Mount Package SOT-363 (SC-70)
- Pin Connections and Package Marking
- Description
- INA-54063 Absolute Maximum Ratings
- Electrical Specifications
- INA-54063 Typical Performance
- INA-54063 Typical Scattering Parameters
- INA-54063 Applications Information
- Introduction
- Operating Details
- Example Layout for 50 W Amplifier
- PCB Materials
- Phase Reference Planes
- SOT-363 PCB Layout
- Statistical Parameters
- SMT Assembly
- Electrostatic Sensitivity
- INA-54063 Part Number Ordering Information
- Package Dimensions
- Device Orientation
- Tape Dimensions and Product Orientation
6-163
Description
Hewlett-Packard's INA-54063 is a
Silicon monolithic amplifier that
offers excellent gain and power
output for applications to
3.0 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of a
SOT-143 package.
With its wide bandwidth and high
linearity, the INA-54063 is an
excellent candidate for DBS IF
applications. It also features a
unique gain curve which in-
creases over the range from 1 to
2 GHz. This gain slope compen-
sates for the gain rolloff found in
typical receiver systems.
The INA-54063 is fabricated using
HP's 30 GHz f
MAX
ISOSATTM
Silicon bipolar process which
uses nitride self-alignment
submicrometer lithography,
trench isolation, ion implantation,
gold metalization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
3.0 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-54063
Features
Ultra-Miniature Package
Single 5 V Supply (29 mA)
21.5 dB Gain (1.9 GHz)
8.0 dBm P
1dB
(1.9 GHz)
Positive Gain Slope
Unconditionally Stable
Applications
IF Amplifier for DBS
Downconverter, Cellular,
Cordless, Special Mobile
Radio, PCS, ISM, and
Wireless LAN Applications
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
Note:
Package marking provides orientation
and identification.
OUTPUT
and V
d
GND
54
GND
GND
INPUT
1
2
3
6
5
4 V
CC
Equivalent Circuit
(Simplified)
RF
INPUT
GROUND
RF
OUTPUT
and V
d
V
d
5965-5364E
6-164
INA-54063 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
d
Supply Voltage, to Ground
V
12
P
in
CW RF Input Power
dBm
13
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
Thermal Resistance
[2]
:
j-c
= 165
C/W
Notes:
1. Operation of this device above any
one of these limits may cause
permanent damage.
2. T
C
= 25
C (T
C
is defined to be the
temperature at the package pins
where contact is made to the
circuit board).
Electrical Specifications,
T
C
= 25
C, Z
O
= 50
, V
d
= 5 V, unless noted
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Std.
Dev.
[1]
G
P
Power Gain (|S
21
|
2
)
f = 1900 MHz
dB
19
21.5
0.7
NF
Noise Figure
f = 1900 MHz
dB
5.0
0.4
P
1dB
Output Power at 1 dB Gain Compression
f = 1900 MHz
dBm
8.0
IP
3
Third Order Intercept Point
f = 1900 MHz
dBm
17
f = 2150 MHz
15.7
VSWR
in
Input VSWR
f = 1900 MHz
1.4
VSWR
out
Output VSWR
f = 1900 MHz
2.4
I
d
Device Current
mA
29
36
1.8
t
d
Group Delay
f = 1900 MHz
ps
272
Note:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
6-165
INA-54063 Typical Performance
T
C
= 25
C, Z
O
= 50
, V
d
= 5 V, unless noted
Figure 7. Input and Output VSWR vs.
Frequency.
0.3
0.9 1.2 1.5 1.8
0.6
2.1
2.7
2.4
3
0.3
0.9 1.2 1.5 1.8
0.6
2.1
2.7
2.4
3
0.3
0.9 1.2 1.5 1.8
0.6
2.1
2.7
2.4
3
0.3
0.9 1.2 1.5 1.8
0.6
2.1
2.7
2.4
3
FREQUENCY (GHz)
Figure 1. Gain vs. Frequency and
Voltage.
10
15
20
25
GAIN (dB)
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and
Temperature.
10
14
12
18
16
20
22
GAIN (dB)
FREQUENCY (GHz)
Figure 2. Noise Figure vs. Frequency
and Voltage.
3
5
4
6
8
7
NOISE FIGURE (dB)
FREQUENCY (GHz)
Figure 3. Output Power for 1 dB Gain
Compression vs. Frequency and
Voltage.
0
8
4
12
16
P
1 dB
(dBm)
T
A
= +85
C
T
A
= +25
C
T
A
= 40
C
Figure 5. Noise Figure vs. Frequency
and Temperature.
NOISE FIGURE (dB)
6 V
5 V
4 V
6 V
5 V
4 V
4 V
6 V
5 V
Figure 6. Output Power for P
1dB
Gain
Compression vs. Frequency and
Temperature.
0
4
2
8
6
10
14
12
P
1 dB
(dBm)
T
A
= +85
C
T
A
= +25
C
T
A
= 40
C
0.3
0.9 1.2 1.5 1.8
0.6
2.1
2.7
2.4
3
FREQUENCY (GHz)
0
1
0.5
2
1.5
2.5
3
VSWR
0.3
0.9 1.2 1.5 1.8
0.6
2.1
2.7
2.4
3
FREQUENCY (GHz)
0.3
0.9 1.2 1.5 1.8
0.6
2.1
2.7
2.4
3
FREQUENCY (GHz)
3
4
3.5
5
4.5
5.5
7.5
6
6.5
7
T
A
= +85
C
T
A
= +25
C
T
A
= 40
C
Figure 8. Supply Current vs. Voltage
and Temperature.
I d
(mA)
0
2
3
4
5
1
6
7
Vd (V)
0
10
5
20
15
25
45
30
35
40
T
A
= +85
C
T
A
= +25
C
T
A
= 40
C
VSWR out
VSWR in
6-166
INA-54063 Typical Scattering Parameters
[1]
,
T
C
= 25
C, Z
O
= 50
, V
d
= 5.0 V
Freq.
S
11
S
21
S
12
S
22
K
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Factor
0.10
0.11
91
16.9
7.02
19
-27.7
0.04
21
0.47
75
1.50
0.20
0.09
64
17.6
7.56
2
-27.1
0.04
7
0.35
34
1.47
0.30
0.08
51
17.7
7.71
-7
-27.0
0.04
0
0.32
10
1.46
0.40
0.09
42
17.9
7.81
-14
-27.1
0.04
-5
0.31
-7
1.46
0.50
0.08
46
18.1
8.00
-21
-27.3
0.04
-9
0.30
-23
1.47
0.60
0.09
39
18.2
8.11
-27
-27.5
0.04
-12
0.30
-36
1.47
0.70
0.09
32
18.3
8.24
-33
-27.8
0.04
-15
0.31
-47
1.48
0.80
0.09
22
18.5
8.41
-39
-28.1
0.04
-17
0.33
-56
1.48
0.90
0.10
13
18.7
8.58
-45
-28.4
0.04
-19
0.34
-65
1.48
1.00
0.10
5
18.9
8.80
-51
-28.8
0.04
-21
0.35
-73
1.48
1.10
0.11
-3
19.1
9.05
-57
-29.2
0.03
-23
0.37
-80
1.48
1.20
0.11
-11
19.4
9.28
-64
-29.6
0.03
-25
0.38
-88
1.50
1.30
0.12
-20
19.6
9.58
-70
-30.1
0.03
-26
0.39
-94
1.50
1.40
0.12
-29
19.9
9.88
-78
-30.6
0.03
-27
0.40
-101
1.52
1.50
0.13
-36
20.2
10.19
-85
-31.1
0.03
-28
0.41
-108
1.54
1.60
0.14
-44
20.4
10.51
-93
-31.5
0.03
-29
0.41
-114
1.55
1.70
0.15
-53
20.7
10.86
-101
-32.0
0.03
-30
0.42
-120
1.57
1.80
0.16
-61
21.0
11.16
-111
-32.7
0.02
-31
0.42
-126
1.63
1.90
0.17
-68
21.1
11.36
-120
-33.5
0.02
-31
0.41
-132
1.74
2.00
0.20
-73
21.2
11.44
-130
-34.2
0.02
-29
0.40
-138
1.87
2.10
0.22
-80
21.2
11.43
-141
-34.9
0.02
-29
0.38
-144
2.04
2.20
0.24
-89
21.0
11.25
-152
-35.6
0.02
-28
0.37
-148
2.22
2.30
0.26
-99
20.7
10.86
-164
-36.0
0.02
-27
0.35
-151
2.41
2.40
0.27
-108
20.1
10.16
-175
-36.8
0.01
-26
0.34
-155
2.82
2.50
0.28
-112
19.5
9.39
175
-37.8
0.01
-24
0.32
-158
3.42
2.60
0.29
-117
18.6
8.55
166
-39.0
0.01
-23
0.31
-162
4.31
2.70
0.30
-124
17.8
7.79
157
-39.3
0.01
-15
0.29
-164
4.94
2.80
0.30
-130
16.9
7.03
150
-39.6
0.01
-16
0.28
-166
5.69
2.90
0.30
-133
16.1
6.35
144
-41.6
0.01
-15
0.26
-170
8.05
3.00
0.30
-136
15.3
5.83
138
-42.5
0.01
-5
0.25
-171
9.80
3.10
0.31
-138
14.6
5.35
132
-43.7
0.01
3
0.23
-173
12.33
3.20
0.31
-140
13.8
4.92
127
-45.4
0.01
13
0.22
-174
16.36
3.30
0.31
-142
13.2
4.57
121
-45.4
0.01
31
0.21
-174
17.56
3.40
0.31
-143
12.5
4.23
116
-45.7
0.01
47
0.20
-174
19.78
3.50
0.32
-145
11.9
3.93
111
-44.8
0.01
65
0.19
-174
19.14
3.60
0.32
-147
11.2
3.65
106
-43.4
0.01
75
0.19
-174
17.63
3.70
0.33
-148
10.6
3.38
101
-42.2
0.01
82
0.18
-174
16.53
3.80
0.34
-149
9.9
3.11
96
-41.1
0.01
88
0.18
-175
15.72
3.90
0.35
-152
9.1
2.84
92
-40.3
0.01
93
0.17
-175
15.60
4.00
0.35
-156
8.4
2.62
89
-39.3
0.01
99
0.16
-174
15.11
4.10
0.34
-159
7.8
2.46
85
-38.0
0.01
103
0.14
-171
14.09
4.20
0.33
-161
7.1
2.27
79
-37.6
0.01
104
0.13
-156
14.64
4.30
0.32
-161
5.6
1.91
75
-37.6
0.01
112
0.19
-135
17.07
4.40
0.33
-161
4.5
1.68
81
-35.8
0.02
127
0.31
-150
14.81
4.50
0.34
-162
4.8
1.73
82
-33.4
0.02
129
0.33
-170
10.72
4.60
0.35
-166
4.9
1.75
80
-31.7
0.03
128
0.32
180
8.78
4.70
0.35
-170
4.8
1.74
76
-30.4
0.03
126
0.30
173
7.69
4.80
0.33
-173
4.6
1.69
72
-29.3
0.03
124
0.30
167
7.09
4.90
0.34
-174
4.2
1.62
69
-28.2
0.04
123
0.29
164
6.57
5.00
0.34
-177
3.9
1.57
66
-27.2
0.04
122
0.29
160
6.04
Note 1: Reference plane per Figure 14 in Applications Information section.
6-167
INA-54063 Applications
Information
Introduction
The INA-54063 is a silicon RFIC
amplifier that is designed with an
internal resistive feedback
network to provide a 50
input
and near 75
output impedance.
With a 1-dB compressed Output
Power of 8 dBm and Noise Figure
of 5 dB, the INA-54063 is well
suited for amplifier applications
requiring high dynamic ranges.
A unique feature of the INA-54063
is a positive gain slope over the
12 GHz range that is useful in
many satellite-based TV and
datacom systems. When used for
the IF amplifier, the up-slope in
the gain of the INA-54063 is
intended to compensate for the
negative gain slope in many Low
Noise Block downconverters
(LNB) used in consumer and
commercial TV delivery systems,
such as DDS, DBS, and TVRO.
The positive gain slope can also
compensate for the high fre-
quency attenuation characteris-
tics of 75
cables used to
connect the outdoor LNBs to
indoor set-top converters.
In addition to use in TV delivery
systems, the INA-54063 will find
many applications in 50
input-
50
output gain and buffer
stages in wireless communica-
tions systems.
Operating Details
The INA-54063 is a voltage biased
device that operates from a
+5 volt power supply with a
typical current drain of 29 mA. All
bias regulation circuitry is
integrated into the RFIC.
Figure 9 shows a typical imple-
mentation of the INA-54063. The
supply voltage for the INA-54063
must be applied to two terminals,
the V
cc
pin and the RF Output pin.
RF
INPUT
RFC
V
d
C
block
C
bypass
C
block
RF
OUTPUT
54
Figure 9. Basic Amplifier
Application.
The V
d
connection to the ampli-
fier is RF bypassed by placing a
capacitor to ground near the V
d
pin of the amplifier package.
The power supply connection to
the RF Output pin is achieved by
means of an RF choke (inductor).
The value of the RF choke must
be large relative to 50/75
in
order to prevent loading of the RF
Output.
The supply voltage end of the RF
choke is bypassed to ground with
a capacitor. If the physical layout
permits, this can be the same
bypass capacitor that is used at
the V
d
terminal of the amplifier.
Blocking capacitors are normally
placed in series with the RF Input
and the RF Output to isolate the
DC voltages on these pins from
circuits adjacent to the amplifier.
The values for the blocking and
bypass capacitors are selected to
provide a reactance at the lowest
frequency of operation that is
small relative to 50
.
Example Layout for 50
Amplifier
An example layout for an ampli-
fier using the INA-54063 with
50
input and 50
output is
shown in Figure 10.
INPUT
OUTPUT
INA-5XX63 DEMO BOARD
05/95
Vcc
H
Figure 10. RF Layout for 50
Input
and Output.
This example uses a
microstripline design (solid
groundplane on the back side of
the circuit board). The circuit
board material is 0.031-inch thick
FR-4. Plated through holes (vias)
are used to bring the ground to
the top side of the circuit where
needed. Multiple vias are used to
reduce the inductance of the path
to ground.
Figure 11 shows an assembled
amplifier. The +5 volt supply
(V
cc
) is fed directly into the V
d
pin of the INA-54063 and into the
RF Output pin through the RF
choke (RFC). Capacitor C3
provides RF bypassing for both
the V
d
pin and the power supply
end of the RFC.
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