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Электронный компонент: MGA-81563

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6-196
0.1 6 GHz 3 V, 14 dBm Amplifier
Technical Data
Features
+14.8 dBm P
1dB
at 2.0 GHz
+17 dBm P
sat
at 2.0 GHz
Single +3V Supply
2.8 dB Noise Figure at
2.0 GHz
12.4 dB Gain at 2.0 GHz
Ultra-miniature Package
Unconditionally Stable
Applications
Buffer or Driver Amp for
PCS, PHS, ISM, SATCOM
and WLL Applications
High Dynamic Range LNA
MGA-81563
Description
Hewlett-Packard's MGA-81563 is
an economical, easy-to-use GaAs
MMIC amplifier that offers
excellent power and low noise
figure for applications from 0.1 to
6 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of a
SOT-143 package.
The output of the amplifier is
matched to 50
(better than
2.1:1 VSWR) across the entire
bandwidth. The input is partially
matched to 50
(better than
2.5:1 VSWR) below 4 GHz and
fully matched to 50
(better than
2:1 VSWR) above. A simple series
inductor can be added to the input
to improve the input match below
4 GHz. The amplifier allows a
wide dynamic range by offering a
2.7 dB NF coupled with a +27 dBm
Output IP
3
.
The circuit uses state-of-the-art
PHEMT technology with proven
reliability. On-chip bias circuitry
allows operation from a single
+3 V power supply, while resistive
feedback ensures stability (K>1)
over all frequencies and
temperatures.
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
OUTPUT
and V
d
GND
81
GND
GND
INPUT
1
2
3
6
5
4 GND
Note: Package marking provides
orientation and identification.
Simplified Schematic
INPUT
3
OUTPUT
and V
d
6
GND
BIAS
1, 2, 4, 5
BIAS
5965-9684E
6-197
Thermal Resistance
[2]
:
ch-c
= 220
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
C
= 25
C (T
C
is defined to be the
temperature at the package pins
where contact is made to the
circuit board.)
MGA-81563 Electrical Specifications,
T
C
= 25
C, Z
O
= 50
, V
d
= 3 V
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max. Std Dev
[2]
G
test
Gain in test circuit
[1]
f = 2.0 GHz
10.5
12.4
0.44
NF
test
Noise Figure in test circuit
[1]
f = 2.0 GHz
2.8
3.8
0.21
NF
50
Noise Figure in 50
system
f = 0.5 GHz
dB
3.1
f = 1.0 GHz
3.0
f = 2.0 GHz
2.7
0.21
f = 3.0 GHz
2.7
f = 4.0 GHz
2.8
f = 6.0 GHz
3.5
|S
21
|
2
Gain in 50
system
f = 0.5 GHz
dB
12.5
f = 1.0 GHz
12.5
f = 2.0 GHz
12.3
0.44
f = 3.0 GHz
11.8
f = 4.0 GHz
11.4
f = 6.0 GHz
10.2
P
1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
15.1
f = 1.0 GHz
14.8
f = 2.0 GHz
14.8
0.86
f = 3.0 GHz
14.8
f = 4.0 GHz
14.8
f = 6.0 GHz
14.7
IP
3
Output Third Order Intercept Point
f = 2.0 GHz
dBm
+27
1.0
VSWR
in
Input VSWR
f = 2.0 GHz
2.7:1
VSWR
out
Output VSWR
f = 2.0 GHz
2.0:1
I
d
Device Current
mA
31
42
51
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
MGA-81563 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
d
Device Voltage, RF Output
V
6.0
to Ground
V
gd
Device Voltage, Gate
V
-6.0
to Drain
V
in
Range of RF Input Voltage
V
+0.5 to -1.0
to Ground
P
in
CW RF Input Power
dBm
+13
T
ch
Channel Temperature
C
165
T
STG
Storage Temperature
C
-65 to 150
6-198
MGA-81563 Typical Performance, T
C
= 25
C, V
d
= 3 V
0
3
4
5
1
2
6
0
3
4
5
1
2
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. Noise Figure (into 50
)
vs. Frequency and Temperature.
T
A
= +85
C
T
A
= +25
C
T
A
= 40
C
0
2
4
6
8
16
12
14
10
GAIN

(dB)
0
1
2
3
4
5
NOISE FIGURE

(dB)
T
A
= +85
C
T
A
= +25
C
T
A
= 40
C
Figure 1. 50
Power Gain vs.
Frequency and Temperature.
0
3
4
5
1
2
6
FREQUENCY (GHz)
Figure 3. Output Power @ 1 dB Gain
Compression vs. Frequency and
Temperature.
P
1 dB

(dBm)
11
12
13
14
15
16
T
A
= +85
C
T
A
= +25
C
T
A
= 40
C
0
1
2
3
4
5
0
3
4
5
1
2
6
NOISE FIGURE

(dB)
FREQUENCY (GHz)
Figure 5. Noise Figure (into 50
) vs.
Frequency and Voltage.
V
d
= 3.3V
V
d
= 3.0V
V
d
= 2.7V
11
12
13
14
15
16
0
3
4
5
1
2
6
FREQUENCY (GHz)
Figure 6. Output Power @ 1 dB Gain
Compression) vs. Frequency and
Voltage.
P
1 dB

(dBm)
V
d
= 3.3V
V
d
= 3.0V
V
d
= 2.7V
0
2
4
6
8
16
12
14
10
0
3
4
5
1
2
6
GAIN

(dB)
FREQUENCY (GHz)
Figure 4. 50
Power Gain vs.
Frequency and Voltage.
V
d
= 3.3V
V
d
= 3.0V
V
d
= 2.7V
0
3
4
5
1
2
6
VSWR (n:1)
FREQUENCY (GHz)
Figure 7. Input and Output VSWR
into 50
vs. Frequency.
1
1.5
2
3
2.5
4
3.5
0
3
4
5
1
2
0
10
20
40
30
60
50
DEVICE CURRENT

(mA)
DEVICE VOLTAGE (V)
Figure 8. Device Current vs. Voltage
and Temperature.
FREQUENCY (GHz)
Figure 9. Minimum Noise Figure and
Associated Gain vs. Frequency.
GAIN and NF

(dB)
T
A
= +85
C
T
A
= +25
C
T
A
= -40
C
NF
Gain
0
3
4
5
1
2
6
0
2
4
6
8
16
12
14
10
Input
Output
6-199
MGA-81563 Typical Scattering Parameters
[1]
,
T
C
= 25
C,
Z
O
= 50
, V
d
= 3 V
Freq.
S
11
S
21
S
12
S
22
K
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
Factor
0.1
0.57
-16
13.02
4.48
172
-25
0.051
312
0.43
-14
1.47
0.2
0.52
-13
12.58
4.258
171
-25
0.057
17
0.38
-13
1.58
0.5
0.49
-16
12.35
4.15
164
-25
0.059
8
0.35
-9
1.64
1.0
0.48
-28
12.18
4.06
152
-25
0.061
5
0.35
-15
1.65
1.5
0.47
-40
12.00
3.98
140
-25
0.063
5
0.34
-22
1.65
2.0
0.45
-52
11.82
3.90
128
-24
0.067
4
0.34
-30
1.65
2.5
0.43
-63
11.63
3.81
116
-24
0.070
2
0.32
-39
1.66
3.0
0.39
-75
11.37
3.70
104
-24
0.074
-1
0.31
-46
1.69
3.5
0.35
-87
11.11
3.59
93
-22
0.077
-4
0.29
-53
1.73
4.0
0.32
-100
10.85
3.49
81
-22
0.081
-7
0.27
-60
1.77
4.5
0.28
-114
10.58
3.38
70
-22
0.083
-11
0.25
-67
1.82
5.0
0.25
-130
10.30
3.27
59
-21
0.087
-15
0.23
-74
1.85
5.5
0.22
-146
10.02
3.17
49
-21
0.09
-20
0.21
-81
1.91
6.0
0.20
-166
9.75
3.07
38
-21
0.091
-25
0.19
-90
1.93
6.5
0.18
174
9.46
2.97
27
-21
0.093
-30
0.17
-96
1.98
7.0
0.17
150
9.12
2.86
16
-21
0.094
-36
0.14
-100
2.05
MGA-81563 Typical Noise Parameters
[1]
T
C
= 25
C,
Z
O
= 50
, V
d
= 3 V
Frequency
NF
O
opt
R
n
/ 50
GHz
dB
Mag.
Ang.
--
0.5
2.90
0.16
1
1.57
1.0
2.80
0.15
17
0.96
1.5
2.70
0.14
28
0.75
2.0
2.69
0.14
37
0.41
2.5
2.68
0.13
44
0.39
3.0
2.68
0.11
50
0.38
3.5
2.68
0.09
56
0.36
4.0
2.69
0.06
65
0.34
4.5
2.69
0.03
76
0.33
5.0
2.68
0.01
137
0.32
5.5
2.67
0.02
-135
0.32
6.0
2.67
0.05
-109
0.32
6.5
2.71
0.07
-95
0.33
7.0
2.77
0.09
-78
0.36
Note:
1. Reference plane per Figure 11 in Applications Information section.
6-200
MGA-81563 Applications
Information
Introduction
This high performance GaAs
MMIC amplifier was developed for
commercial wireless applications
from 100 MHz to 6 GHz.
The MGA-81563 runs on only
3 volts and typically requires only
42 mA to deliver 14.8 dBm of
output power at 1 dB gain
compression.
An innovative internal bias circuit
regulates the device's internal
current to enable the MGA-81563
to operate over a wide tempera-
ture range with a single, positive
power supply of 3 volts.
The MGA-81563 will operate with
reduced performance with
voltages as low as 1.5 volts.
The MGA-81563 uses resistive
feedback to simultaneously
achieve flat gain over a wide
bandwidth and match the input
and output impedances to 50
.
The MGA-81563 is unconditionally
stable (K>1) over its entire
frequency range, making it both
very easy to use and yielding
consistent performance in the
manufacture of high volume
wireless products.
With a combination of high
linearity (+27 dBm output IP
3
) and
low noise figure (3 dB), the
MGA-81563 offers outstanding
performance for applications
requiring a high dynamic range,
such as receivers operating in
dense signal environments. A wide
dynamic range amplifier such as
the MGA-81563 can often be used
to relieve the requirements of
bulky, lossy filters at a receiver's
input.
The 14.8 dBm output power (P
1dB
)
also makes the MGA-81563
extremely useful for pre-driver,
driver and buffer stages. For
transmitter gain stage applications
that require higher output power,
the MGA-81563 can provide
50 mW (17 dBm) of saturated
output power with a high power
added efficiency of 45%.
Test Circuit
The circuit shown in Figure 10 is
used for 100% RF testing of Noise
Figure and Gain. The 3.9 nH
inductor at the input fix-tunes the
circuit to 2 GHz. The only purpose
of the RFC at the output is to
apply DC bias to the device under
test. Tests in this circuit are used
to guarantee the NF
test
and G
test
parameters shown in the table of
Electrical Specifications.
RF
INPUT
3.9 nH
22 nH
RFC
100 pF
100 pF
Vd
RF
OUTPUT
81
Figure 10. Test Circuit.
Phase Reference Planes
The positions of the reference
planes used to specify the S-
Parameters and Noise Parameters
for this device are shown in
Figure 11. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
TEST CIRCUIT
REFERENCE
PLANES
Figure 11. Phase Reference Planes.
Specifications and Statistical
Parameters
Several categories of parameters
appear within this data sheet.
Parameters may be described with
values that are either "minimum
or maximum," "typical," or
"standard deviations."
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on of a minimum of
500 parts taken from 3 non-
consecutive process lots of
semiconductor wafers. The data
derived from product character-
ization tends to be normally
distributed, e.g., fits the standard
"bell curve."
Parameters considered to be the
most important to system perfor-
mance are bounded by minimum
or maximum values. For the
MGA-81563, these parameters are:
Gain (G
test
), Noise Figure (NF
test
),
and Device Current (I
d
). Each of
these guaranteed parameters is
100% tested.
Values for most of the parameters
in the table of Electrical Specifica-
tions that are described by typical
data are the mathematical mean
(
), of the normal distribution
taken from the characterization
data. For parameters where
measurements or mathematical
averaging may not be practical,
such as the Noise and S-parameter
tables or performance curves, the
data represents a nominal part
taken from the "center" of the
characterization distribution.
Typical values are intended to be
used as a basis for electrical
design.