Document Outline
- MGA-83563
- Features
- Applications
- Equivalent Circuit
- Surface Mount Package
- Pin Connections and Package Marking
- Description
- Absolute Maximum Ratings
- Electrical Specifications
- Typical Performance
- Test Circuit
- Typical Scattering Parameters
- Applications Information
- Application Guidelines
- PCB Layout Recommendations
- Thermal Design for Reliability
- Design Example for 2.5 GHz
- Completed 2.5 GHz Amplifier
- Amplifier Designs for 1.9 GHz and 900 MHz
- Summary of Example Amplifiers
- Use of the MGA-83563 for Linear Applications
- Operation at Higher Supply Voltages
- Hints and Troubleshooting
- Phase Reference Planes
- SMT Assembly
- Electrostatic Sensitivity
- Appendix
- Package Dimensions
- Part Number Ordering Information
- Device Orientation
- Tape Dimensions and Product Orientation
+22 dBm P
SAT
3V Power Amplifier
for 0.5 6 GHz Applications
Technical Data
MGA-83563
Features
+22 dBm P
SAT
at 2.4 GHz,
3.0 V
+23 dBm P
SAT
at 2.4 GHz,
3.6 V
22 dB Small Signal Gain at
2.4 GHz
Wide Frequency Range 0.5
to 6 GHz
Single 3 V Supply
37% Power Added
Efficiency
Ultra Miniature Package
Applications
Amplifier for Driver and
Output Applications
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
Equivalent Circuit
(Simplified)
Note:
Package marking provides orientation
and identification; "x" is date code.
Description
Agilent's MGA-83563 is an easy-
to-use GaAs RFIC amplifier that
offers excellent power output and
efficiency. This part is targeted
for 3V applications where con-
stant-envelope modulation is
used. The output of the amplifier
is matched internally to 50
.
However, an external match can
be added for maximum efficiency
and power out (PAE = 37%, P
o
=
22 dBm). The input is easily
matched to 50
.
Due to the high power output of
this device, it is recommended for
use under a specific set of
operating conditions. The thermal
sections of the Applications
Information explain this in detail.
The circuit uses state-of-the-art
PHEMT technology with proven
reliability. On-chip bias circuitry
allows operation from single
supply voltage.
GND
GND
83x
INPUT
GND
Vd1
OUTPUT
and Vd2
1
6
2
5
3
4
OUTPUT
and V
d2
BIAS
INPUT
V
d1
BIAS
GROUND
2
Thermal Resistance
[2]
:
ch to c
= 175
C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
C
= 25
C (T
C
is defined to be the
temperature at the package pins where
contact is made to the circuit board).
MGA-83563 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
Maximum DC Supply Voltage
V
4
P
in
CW RF Input Power
dBm
+13
T
ch
Channel Temperature
C
165
T
STG
Storage Temperature
C
-65 to 150
0
200
400
800
600
700
500
300
100
10
30
50
70
90
150
110
130
POWER DISSIPATED AS HEAT
(mW)
Pd = (VOLTAGE) x (CURRENT) (Pout)
CASE TEMPERATURE (
C)
1 x 10
6
Hrs MTTF
Temperature/Power Derating Curve.
Figure 1. MGA-83563 Final Production Test Circuit.
Figure 2. MGA-83563 Test Circuit for Characterization.
RF
INPUT
1.2 nH
2.2 nH
18 nH
20 pF
3.0V
1 pF
50 pF
RF
OUTPUT
83
RF
INPUT
Circuit A: L1 = 2.2 nH for 0.1 to 3 GHz
Circuit B: L1 = 0 nH (capacitor as close as possible) for 3 to 6 GHz
L1
20 pF
V
d
RF
OUTPUT
83
Tuner
Tuner
Bias
Tee
3
MGA-83563 Electrical Specifications,
V
d
= 3 V, T
C
= 25
C, using test circuit of Figure 2, unless noted.
Std.
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Dev.
[4]
P
SAT
Saturated Output Power
[3]
f = 2.4 GHz
dBm
20.5
22.4
0.75
PAE
[3]
Power Added Efficiency
f = 2.4 GHz
%
25
37
2.5
I
d
[5]
Device Current
mA
152
200
12.4
Gain
Small Signal Gain
f = 0.9 GHz
dB
20
f = 1.5 GHz
22
f = 2.0 GHz
23
f = 2.4 GHz
22
f = 4.0 GHz
22
f = 5.0 GHz
19
f = 6.0 GHz
17
P
SAT
Saturated Output Power
f = 0.9 GHz
dBm
20.9
f = 1.5 GHz
21.7
f = 2.0 GHz
21.8
f = 2.4 GHz
22
f = 4.0 GHz
21.9
f = 5.0 GHz
19.7
f = 6.0 GHz
18.2
PAE
Power Added Efficiency
f = 0.9 GHz
%
41
f = 1.5 GHz
41
f = 2.0 GHz
40
f = 2.4 GHz
37
f = 4.0 GHz
32
f = 5.0 GHz
18
f = 6.0 GHz
14
P
1 dB
[5]
Output Power at 1 dB Gain Compression
f = 0.9 GHz
dBm
19.1
f = 1.5 GHz
19.7
f = 2.0 GHz
19.7
f = 2.4 GHz
19.2
f = 4.0 GHz
18.1
f = 5.0 GHz
16
f = 6.0 GHz
15
VSWR
in
Input VSWR into 50
Circuit A
f = 0.9 to 1.7 GHz
3.5
f
= 1.8 to 3.0 GHz
2.6
Circuit B
f = 3.0 to 6.0 GHz
2.3
VSWR
out
Output VSWR into 50
Circuit A
f = 0.9 to 2.0 GHz
1.4
f
= 2.0 to 3.0 GHz
2.5
Circuit B
f = 3.0 to 4.0 GHz
3.5
f = 4.0 to 6.0 GHz
4.5
ISOL
Isolation
f = 0.9 to 3.0 GHz
dB
-38
f = 3.0 to 6.0 GHz
-30
IP
3
Third Order Intercept Point
f = 0.9 GHz to 6.0 GHz
dBm
29
Notes:
3. Measured using the final test circuit of Figure 1 with an input power of +4 dBm.
4. Standard Deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
5. For linear operation, refer to thermal sections in the Applications section of this data sheet.
4
MGA-83563 Typical Performance,
V
d
= 3 V, T
C
= 25
C, using test circuit of Figure 2, unless noted.
10
14
18
26
22
24
20
16
12
0
1
2
3
4
6
5
3.3 V
3.0 V
2.7 V
GAIN
(dB)
FREQUENCY (GHz)
Figure 3. Tuned Gain vs. Frequency
and Voltage.
14
16
18
24
22
20
0
1
2
3
4
6
5
P
1dB
(dBm)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB
Compression vs. Frequency and Voltage.
2.7 V
3.0 V
3.3 V
3.6 V
14
16
18
24
22
20
0
1
2
3
4
6
5
P
SAT
(dBm)
FREQUENCY (GHz)
Figure 5. Saturated Output Power
(+4 dBm in) vs. Frequency and Voltage
.
2.7 V
3.0 V
3.3 V
3.6 V
10
14
18
26
22
24
20
16
12
0
1
2
3
4
6
5
-40
C
+25
C
+85
C
GAIN
(dB)
FREQUENCY (GHz)
Figure 6. Gain vs. Frequency and
Temperature.
14
16
18
24
22
20
0
1
2
3
4
6
5
OUTPUT POWER
(dBm)
FREQUENCY (GHz)
Figure 7. Saturated Output Power
(+4 dBm in) vs. Frequency and
Temperature.
-40
C
+25
C
+85
C
2
4
6
12
10
8
0
1
2
3
4
6
5
NOISE FIGURE
(dB)
FREQUENCY (GHz)
Figure 8. Noise Figure vs. Frequency
and Temperature.
-40
C
+25
C
+85
C
0
2
4
10
8
6
0
1
2
3
4
6
5
VSWR
FREQUENCY (GHz)
Figure 9. Input and Output VSWR
vs. Frequency.
0
40
80
200
160
140
120
180
100
60
20
0
1
2
4
3
-40
C
+25
C
+85
C
DEVICE CURRENT, I
d
(mA)
FREQUENCY (GHz)
Figure 10. Supply Current vs. Voltage
and Temperature. P
in
= -27 dBm.
70
110
150
170
130
90
0
20
40
50
30
10
-14
-10
-6
-2
2
6
DEVICE CURRENT, I
d
(mA)
PAE (%)
INPUT POWER (dBm) @ 2.4 GHz
Figure 11. Device Current and Power
Added Efficiency vs. Input Power.
Note: Figure 1 test circuit.
Id
PAE
INPUT
OUTPUT
5
MGA-83563 Typical Performance,
continued
V
d
= 3 V, T
C
= 25
C, using test circuit of Figure 2, unless noted.
10
14
18
24
22
20
16
12
-10
-8
-6
-2
-4
2
0
6
4
2.7 V
3.0 V
3.3 V
3.6 V
OUTPUT POWER
(dBm)
INPUT POWER (dBm) @ 2.4 GHz
Figure 12. Output Power vs. Input
Power and Voltage.
Note: Figure 1 test circuit.
25
27
29
33
31
32
30
28
26
-14
-10
-6
-2
6
2
2.7 V
3.0 V
3.3 V
3.6 V
THIRD ORDER INTERCEPT
(dBm)
INPUT POWER (dBm) @ 2.4 GHz
Figure 13. Third Order Intercept
vs. Input Power and Voltage.
Note: Figure 1 test circuit.
20
25
30
50
45
40
35
0
1
2
3
4
6
5
PAE (%) and IP
3
(dBm)
FREQUENCY (GHz)
Figure 14. Power Added Efficiency
and Third Order Intercept vs.
Frequency (V
d
= 3.6 V).
-50
-45
-40
-20
-25
-30
-35
0
1
2
3
4
6
5
ISOLATION
(dB)
FREQUENCY (GHz)
Figure 15. Isolation vs. Frequency.
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