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Электронный компонент: MSA-0186

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6-262
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
Cascadable 50
Gain Block
3 dB Bandwidth:
DC to 0.9 GHz
High Gain:
17.5 dB Typical at 0.5 GHz
Unconditionally Stable
(k>1)
Surface Mount Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
MSA-0186
86 Plastic Package
Description
The MSA-0186 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
Note:
1. Refer to PACKAGING section "Tape-
and-Reel Packaging for Semiconductor
Devices".
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9694E
6-263
MSA-0186 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power
+13 dBm
Junction Temperature
150
C
Storage Temperature
65 to 150
C
Thermal Resistance
[2,4]
:
jc
= 115
C/W
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
18.5
f = 0.5 GHz
15.5
17.5
G
P
Gain Flatness
f = 0.1 to 0.6 GHz
dB
0.7
f
3 dB
3 dB Bandwidth
GHz
0.9
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.2:1
NF
50
Noise Figure
f = 0.5 GHz
dB
5.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
1.5
IP
3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.0
t
D
Group Delay
f = 0.5 GHz
psec
200
V
d
Device Voltage
V
4.0
5.0
6.0
dV/dT
Device Voltage Temperature Coefficient
mV/
C
9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions: I
d
= 17 mA, Z
O
= 50
Units
Min.
Typ.
Max.
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 8.7 mW/
C for T
C
> 127
C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.
VSWR
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0186-BLK
100
Antistatic Bag
MSA-0186-TR1
1000
7" Reel
For more information refer to PACKAGING section, "Tape and Reel
Packaging for Semiconductor Devices."
6-264
MSA-0186 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
C, I
d
= 17 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.05
148
18.5
8.39
171
23.0
.071
4
.08
7
0.2
.06
124
18.3
8.22
162
22.8
.073
9
.08
14
0.3
.07
103
18.1
8.03
154
22.6
.074
13
.07
24
0.4
.08
89
17.7
7.67
146
22.2
.078
14
.07
31
0.5
.08
76
17.4
7.42
139
21.9
.081
17
.06
39
0.6
.09
66
17.0
7.06
131
21.4
.085
21
.06
47
0.8
.10
50
16.2
6.47
119
20.5
.094
25
.07
67
1.0
.10
35
15.3
5.83
107
19.6
.105
29
.07
89
1.5
.07
12
13.2
4.57
83
17.7
.131
30
.08
165
2.0
.02
12
11.3
3.67
64
16.1
.157
27
.08
156
2.5
.06
165
9.8
3.09
50
14.8
.182
24
.08
134
3.0
.14
150
8.3
2.60
34
13.9
.202
19
.09
124
3.5
.23
137
7.0
2.24
20
13.4
.213
12
.09
117
4.0
.31
125
5.7
1.93
6
13.0
.223
5
.09
114
5.0
.45
105
3.3
1.46
17
12.7
.231
5
.09
132
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
0
1
3
2
5
4
6
7
16
17
18
5
25
0
+25
+55
+85
6
7
4
P
1 dB
(dBm)
NF (dB)
G
P
P
1 dB
NF
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
C, I
d
= 17 mA.
0
3
6
9
12
15
18
24
21
G
p
(dB)
TEMPERATURE (
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz,
I
d
=17 mA.
5.0
5.5
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
4
2
0
2
4
6
P
1 dB
(dBm)
Gain Flat to DC
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
5
10
15
20
25
I
d
(mA)
0
2
3
4
5
6
1
I
d
= 20 mA
I
d
= 17 mA
I
d
= 13 mA
T
C
= +85
C
T
C
= +25
C
T
C
= 25
C
I
d
= 13 mA
I
d
= 17 mA
I
d
= 25 mA
I
d
= 13 mA
I
d
= 17 mA
I
d
= 20 mA
Typical Performance, T
A
= 25
C
(unless otherwise noted)
6-265
86 Plastic Package Dimensions
4
0.51
0.13
(0.020
0.005)
2.34
0.38
(0.092
0.015)
2.67
0.38
(0.105
0.15)
1
3
2
2.16
0.13
(0.085
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52
0.25
(0.060
0.010)
0.66
0.013
(0.026
0.005)
0.203
0.051
(0.006
0.002)
0.30 MIN
(0.012 MIN)
C
L
45
5
TYP.
8
MAX
0
MIN
GROUND
RF INPUT
RF OUTPUT
AND DC BIAS
GROUND
A01