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Электронный компонент: MSA-0235

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6-274
Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
Features
Cascadable 50
Gain Block
3 dB Bandwidth:
DC to 2.7 GHz
12.0 dB Typical Gain at
1.0 GHz
Unconditionally Stable
(k>1)
Cost Effective Ceramic
Microstrip Package
MSA-0235, -0236
35 micro-X Package
[1]
Description
The MSA-0235 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
Note:
1.
Short leaded 36 package available
upon request.
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0236.
5965-9697E
6-275
MSA-0235, -0236 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
[4]
65 to 200
C
Thermal Resistance
[2,5]
:
jc
= 145
C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 6.9 mW/
C for T
C
> 153
C.
4. Storage above +150
C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods. See MEASURE-
MENTS section "Thermal Resistance" for more information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
11.5
12.5
13.5
G
P
Gain Flatness
f = 0.1 to 1.6 GHz
dB
0.6
1.0
f
3 dB
3 dB Bandwidth
GHz
2.7
Input VSWR
f = 0.1 to 3.0 GHz
1.2:1
Output VSWR
f = 0.1 to 3.0 GHz
1.4:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
4.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
17.0
t
D
Group Delay
f = 1.0 GHz
psec
125
V
d
Device Voltage
V
4.5
5.0
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/
C
8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions: I
d
= 25 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0235
10
Strip
MSA-0236-BLK
100
Antistatic Bag
MSA-0236-TR1
1000
7" Reel
For more information refer to PACKAGING section, "Tape and Reel
Packaging for Semiconductor Devices."
6-276
MSA-0235, -0236 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
C, I
d
= 25 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.08
170
12.6
4.25
176
18.6
.118
2
.16
6
0.2
.08
163
12.5
4.23
171
18.5
.119
2
.15
10
0.4
.08
147
12.5
4.19
161
18.4
.120
4
.15
21
0.6
.08
130
12.4
4.14
152
18.3
.121
4
.15
30
0.8
.07
112
12.2
4.09
143
18.1
.125
7
.15
39
1.0
.07
91
12.1
4.02
134
18.0
.126
10
.15
46
1.5
.06
47
11.6
3.80
112
17.3
.137
11
.13
66
2.0
.03
1
11.0
3.53
91
16.3
.153
10
.11
89
2.5
.03
115
10.2
3.24
75
15.4
.169
12
.09
111
3.0
.09
157
9.3
2.92
57
15.1
.176
8
.08
127
3.5
.16
175
8.3
2.60
39
14.4
.190
3
.09
129
4.0
.20
173
7.2
2.29
23
14.1
.198
2
.11
118
5.0
.27
136
5.2
1.81
6
13.5
.211
11
.15
117
6.0
.41
94
3.2
1.44
33
13.5
.212
24
.11
148
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
C
(unless otherwise noted)
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
C, I
d
= 25 mA.
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
0
2
4
6
8
10
12
14
G
p
(dB)
15
25
30
40
35
20
Gain Flat to DC
6.0
5.5
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
2
4
6
8
10
12
P
1 dB
(dBm)
I
d
= 40 mA
I
d
= 18 mA
I
d
= 25 mA
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
40
I
d
(mA)
0
2
3
4
5
6
1
T
C
= +125
C
T
C
= +25
C
T
C
= 55
C
2
3
4
5
6
7
8
11
12
13
7
55
25
+25
+85
+125
8
6
5
4
3
2
P
1 dB
(dBm)
NF (dB)
G
p
(dB)
TEMPERATURE (
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f=1.0 GHz, I
d
= 25 mA.
NF
G
P
P
1 dB
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I
d
= 18 mA
I
d
= 25 mA
I
d
= 40 mA
6-277
35 micro-X Package Dimensions
A02
1
3
4
2
GROUND
DIA.
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.085
2.15
.083
2.11
.020
.508
.100
2.54
.455
.030
11.54
.75
.006
.002
.15
.05
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
0.005
mm .xx =
0.13
mm
.022
.56
.057
.010
1.45
.25