ChipFind - документация

Электронный компонент: MSA-0270

Скачать:  PDF   ZIP

Document Outline

6-278
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
Cascadable 50
Gain Block
3 dB Bandwidth:
DC to 2.8 GHz
12.0 dB Typical Gain at
1.0 GHz
Unconditionally Stable
(k>1)
Hermetic Gold-ceramic
Microstrip Package
MSA-0270
70 mil Package
Description
The MSA-0270 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
high reliability package. This
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
MMIC is designed for use as a
general purpose 50
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9698E
6-279
MSA-0270 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
65 to 200
C
Thermal Resistance
[2,4]
:
jc
= 120
C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 8.3 mW/
C for T
C
> 161
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods. See MEASURE-
MENTS section "Thermal Resistance" for more information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
11.5
12.5
13.5
G
P
Gain Flatness
f = 0.1 to 1.8 GHz
dB
0.6
1.0
f
3 dB
3 dB Bandwidth
GHz
2.8
Input VSWR
f = 0.1 to 3.0 GHz
1.4:1
Output VSWR
f = 0.1 to 3.0 GHz
1.4:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
4.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
17.0
t
D
Group Delay
f = 1.0 GHz
psec
125
V
d
Device Voltage
V
4.5
5.0
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/
C
8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions: I
d
= 25 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
6-280
MSA-0270 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
C, I
d
= 25 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.11
179
12.6
4.26
176
18.4
.120
1
.12
8
0.2
.11
174
12.6
4.24
171
18.6
.117
3
.12
15
0.4
.10
169
12.5
4.21
162
18.4
.120
4
.13
30
0.6
.09
165
12.4
4.17
154
18.2
.123
5
.14
44
0.8
.08
161
12.3
4.11
146
18.2
.123
7
.14
55
1.0
.06
161
12.2
4.05
137
18.0
.126
9
.15
64
1.5
.02
150
11.7
3.85
116
17.2
.138
11
.16
84
2.0
.06
110
11.1
3.57
96
16.3
.153
11
.16
102
2.5
.11
112
10.3
3.27
82
15.7
.165
14
.14
106
3.0
.17
134
9.3
2.92
65
15.2
.174
12
.13
114
3.5
.22
147
8.2
2.56
48
14.7
.185
6
.15
111
4.0
.26
156
7.0
2.23
33
14.3
.192
3
.19
107
5.0
.28
179
4.7
1.72
8
14.0
.199
6
.27
107
6.0
.30
143
3.0
1.41
13
13.8
.204
14
.29
119
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
C
(unless otherwise noted)
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
C, I
d
= 25 mA.
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
0
2
4
6
8
10
12
14
G
p
(dB)
15
25
30
40
35
20
Gain Flat to DC
6.0
5.5
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
2
4
6
8
10
12
P
1 dB
(dBm)
I
d
= 40 mA
I
d
= 18 mA
I
d
= 25 mA
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
40
I
d
(mA)
0
2
3
4
5
6
1
T
C
= +125
C
T
C
= +25
C
T
C
= 55
C
2
3
4
5
6
7
8
11
12
13
7
55
25
+25
+85
+125
8
6
5
4
3
2
P
1 dB
(dBm)
NF (dB)
G
p
(dB)
TEMPERATURE (
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
d
= 25 mA.
NF
G
P
P
1 dB
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I
d
= 18 mA
I
d
= 25 mA
I
d
= 40 mA
6-281
70 mil Package Dimensions
1
3
4
2
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.020
.508
.070
1.70
.495
.030
12.57
.76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
0.005
mm .xx =
0.13
mm
.040
1.02
.035
.89
.004
.002
.10
.05