Document Outline
- List of Figures
- 1. Typical Power Gain vs. Frequency
- 2. Device Current vs. Voltage
- 3. Power Gain vs. Current
- 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature
- 5. Output Power at 1 dB Gain Compression vs. Frequency
- 6. Noise Figure vs. Frequency
- Features
- Description
- Typical Biasing Configuration
- 85 Plastic Package
- MSA-0285 Absolute Maximum Ratings
- Electrical Specifications
- MSA-0285 Typical Scattering Parameters
- Typical Performance
- 85 Plastic Package Dimensions
6-282
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
Cascadable 50
Gain Block
3 dB Bandwidth:
DC to 2.6 GHz
12.0 dB Typical Gain at
1.0 GHz
Unconditionally Stable
(k>1)
Low Cost Plastic Package
MSA-0285
85 Plastic Package
Description
The MSA-0285 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9563E
6-283
MSA-0285 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power
+13 dBm
Junction Temperature
150
C
Storage Temperature
65 to 150
C
Thermal Resistance
[2,4]
:
jc
= 95
C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 10.5 mW/
C for T
C
> 119
C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
12.5
f = 1.0 GHz
10.0
12.0
G
P
Gain Flatness
f = 0.1 to 1.6 GHz
dB
0.6
f
3 dB
3 dB Bandwidth
GHz
2.6
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.4:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
4.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
17.0
t
D
Group Delay
f = 1.0 GHz
psec
125
V
d
Device Voltage
V
4.0
5.0
6.0
dV/dT
Device Voltage Temperature Coefficient
mV/
C
8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions: I
d
= 25 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
6-284
MSA-0285 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
C, I
d
= 25 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.10
174
12.6
4.25
175
18.6
.118
2
.14
7
0.2
.10
168
12.5
4.22
171
18.5
.119
3
.13
12
0.4
.10
157
12.4
4.17
161
18.3
.122
6
.14
26
0.6
.09
143
12.3
4.10
153
18.3
.121
7
.14
38
0.8
.08
132
12.1
4.03
144
18.0
.126
11
.14
48
1.0
.08
122
11.9
3.95
135
17.5
.133
12
.14
60
1.5
.04
95
11.4
3.70
115
17.0
.142
16
.13
85
2.0
.02
117
10.6
3.40
95
16.0
.158
17
.12
110
2.5
.05
173
9.9
3.11
82
15.0
.177
20
.12
128
3.0
.12
175
8.9
2.78
65
14.7
.185
19
.11
148
3.5
.16
179
7.9
2.49
49
14.0
.199
14
.10
145
4.0
.21
169
6.9
2.22
35
13.7
.207
11
.10
134
5.0
.28
139
5.0
1.77
9
13.0
.224
4
.12
118
6.0
.41
100
3.0
1.42
16
12.9
.226
5
.09
154
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
C
(unless otherwise noted)
3
4
6
5
8
7
11
12
13
5
25
0
+25
+55
+85
6
7
8
4
3
P
1 dB
(dBm)
NF (dB)
G
P
NF
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
C, I
d
= 25 mA.
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
0
2
4
6
8
10
12
14
G
p
(dB)
G
p
(dB)
15
25
30
35
40
20
TEMPERATURE (
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=25mA.
5.5
6.0
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
2
4
6
8
10
12
P
1 dB
(dBm)
Gain Flat to DC
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
5
10
15
20
25
I
d
(mA)
0
2
3
4
5
6
1
I
d
= 18 mA
T
C
= +85
C
T
C
= +25
C
T
C
= 25
C
P
1 dB
I
d
= 40 mA
I
d
= 25 mA
I
d
= 18 mA
I
d
= 25 mA
I
d
= 40 mA
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6-285
1
3
4
2
5
TYP.
45
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.085
2.15
.286
.030
7.36
.76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
0.005
mm .xx =
0.13
mm
.020
.51
.07
0.43
.060
.010
1.52
.25
.006
.002
.15
.05
0.143
0.015
3.63
0.38
85 Plastic Package Dimensions
A02
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