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Электронный компонент: MSA-0386

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6-314
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
Cascadable 50
Gain Block
3 dB Bandwidth:
DC to 2.4 GHz
12.0 dB Typical Gain at
1.0 GHz
10.0 dBm Typical P
1 dB
at
1.0 GHz
Unconditionally Stable
(k>1)
Surface Mount Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
MSA-0386
86 Plastic Package
Description
The MSA-0386 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
Note:
1. Refer to PACKAGING section "Tape-
and-Reel Packaging for Surface
Mount Semiconductors".
5965-9571E
6-315
MSA-0386 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
70 mA
Power Dissipation
[2,3]
400 mW
RF Input Power
+13 dBm
Junction Temperature
150
C
Storage Temperature
65 to 150
C
Thermal Resistance
[2,4]
:
jc
= 115
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 9.5 mW/
C for T
C
> 116
C.
4. See MEASUREMENTS section
"Thermal Resistance" for more
information.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0386-TR1
1000
7" Reel
MSA-0386-BLK
100
Antistatic Bag
For more information, see "Tape and Reel Packaging for Semiconductor Devices".
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
12.5
f = 1.0 GHz
10.0
12.0
G
P
Gain Flatness
f = 0.1 to 1.6 GHz
dB
0.7
f
3 dB
3 dB Bandwidth
GHz
2.4
Input VSWR
f = 0.1 to 3.0 GHz
1.5:1
Output VSWR
f = 0.1 to 3.0 GHz
1.7:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.0
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
10.0
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
t
D
Group Delay
f = 1.0 GHz
psec
140
V
d
Device Voltage
V
4.0
5.0
6.0
dV/dT
Device Voltage Temperature Coefficient
mV/
C
8.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
6-316
MSA-0386 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
C, I
d
= 35 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.11
174
12.5
4.22
175
18.3
.122
1
.13
11
0.2
.11
169
12.5
4.20
170
18.2
.124
2
.13
20
0.4
.11
159
12.4
4.16
159
18.1
.124
5
.14
41
0.6
.10
149
12.2
4.09
149
17.9
.128
8
.15
60
0.8
.10
142
12.1
4.00
139
17.6
.131
9
.16
78
1.0
.09
137
11.9
3.93
129
17.4
.136
11
.18
93
1.5
.09
139
11.2
3.61
106
16.6
.149
14
.20
129
2.0
.12
149
10.3
3.28
83
15.3
.171
13
.23
157
2.5
.18
150
9.4
2.95
66
14.4
.190
12
.26
176
3.0
.25
142
8.3
2.60
48
13.7
.207
9
.29
167
3.5
.32
133
7.2
2.29
31
13.2
.219
3
.30
152
4.0
.40
124
6.0
2.01
15
13.0
.224
1
.31
142
5.0
.53
106
3.7
1.53
13
12.8
.228
11
.32
128
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
G
p,
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY, (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
C.
0
2
4
6
8
10
12
14
Gain Flat to DC
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
60
I
d
(mA)
0
2
3
4
5
6
1
40
50
T
C
= +85
C
T
C
= +25
C
T
C
= 25
C
5
6
7
11
12
13
25
0
+25
+55
+85
8
9
10
11
P
1 dB
(dBm)
NF (dB)
G
P
NF
G
p
(dB)
TEMPERATURE (
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=35mA.
P
1 dB
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
0
3
6
9
12
15
18
P
1 dB
(dBm)
I
d
= 50 mA
I
d
= 20 mA
I
d
= 35 mA
5.5
5.0
6.0
6.5
7.0
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
NF (dB)
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
Typical Performance, T
A
= 25
C
(unless otherwise noted)
6-317
86 Plastic Package Dimensions
4
0.51
0.13
(0.020
0.005)
2.34
0.38
(0.092
0.015)
2.67
0.38
(0.105
0.15)
1
3
2
2.16
0.13
(0.085
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52
0.25
(0.060
0.010)
0.66
0.013
(0.026
0.005)
0.203
0.051
(0.006
0.002)
0.30 MIN
(0.012 MIN)
C
L
45
5
TYP.
8
MAX
0
MIN
GROUND
RF INPUT
RF OUTPUT
AND DC BIAS
GROUND
A03