Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chips
Features
s
22 dBm Output Power @ 18 GHz
s
High Associated Gain, 9 dB @ 18 GHz
s
High Power Added Efficiency, 23%
s
Broadband Operation, DC18 GHz
s
0.25
m Ti/Pd/Au Gates
s
Passivated Surface
Description
The AFM06P3-212, 213 are high performance power
GaAs MESFET chips in an industry standard ceramic
micro-x package, having a gate length of 0.25
m and a
total gate periphery of 600
m. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
employ Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
AFM06P3-212, AFM06P3-213
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (I
DSS
)
130.0
200.0
270.0
mA
Transconductance (gm)
V
DS
= 2 V, V
GS
= 0 V
90.0
120.0
mS
Pinch-Off Voltage (V
P
)
V
DS
= 5 V, I
DS
= 1.5 mA
1.0
3.0
5.0
V
Gate to Drain Breakdown
I
GD
= 600
A
8.0
12.0
V
Voltage (V
bgd
)
Output Power at 1 dB
22.0
dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
dB
Power Added Efficiency (
add)
23.0
%
Electrical Specifications at 25C
Source
Gate
Source
Drain
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (V
DS
) 6
V
Gate to Source Voltage (V
GS
) -4
V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 1
mA
Total Power Dissipation (P
T
) 1.1
W
Storage Temperature (T
ST
)
-65 to +150C
Channel Temperature (T
CH
) 175C
Absolute Maximum Ratings
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213
I-V
0
30
60
90
120
150
0
1
2
3
4
5
-0.5 V
-1.0 V
-1.5 V
-2.0 V
-2.5 V
V
DS
(V)
l
DS
(mA)
V
GS
= 0 V
Power Derating
0
50
100
150
200
Total Power Dissipation P
T
(W)
T
BASE
(C)
0
0.25
0.50
0.75
1.00
1.25
1.50
Typical Performance Data
Typical S-Parameters (V
DS
= 5 V, I
DS
= 100 mA)
Freq.
S
11
S
21
S
12
S
22
MAG/
(GHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
MSG (dB)
1
0.827
-37.8264
7.3390
153.0160
0.0202
76.0460
0.5006
-36.961
2
0.841
-71.7158
6.0499
122.7182
0.0340
57.6193
0.3925
-44.484
22.5047
3
0.776
-95.9016
5.0784
98.6981
0.0423
43.4674
0.3538
-60.536
20.7939
4
0.773
-116.1009
4.4165
83.7214
0.0496
41.8927
0.2474
-67.747
19.4986
5
0.772
-136.3639
4.0687
61.0411
0.0574
28.5307
0.2514
-80.500
18.5080
6
0.729
-159.5267
3.6170
42.4229
0.0621
20.3616
0.2539
-105.251
17.6540
7
0.652
177.0366
3.3407
26.8719
0.0695
14.1562
0.2666
-122.438
14.9166
8
0.680
154.3013
3.1085
11.1292
0.0769
9.6583
0.2744
-136.476
16.0668
9
0.720
135.1126
2.8509
-1.4693
0.0818
3.2226
0.2352
-147.323
15.4208
10
0.666
117.7185
2.6700
-17.9531
0.0898
-5.3931
0.2551
-164.635
13.3968
11
0.631
100.5973
2.3131
-33.8962
0.0907
-14.6182
0.2561
178.758
10.7345
12
0.644
76.8920
2.0077
-49.6463
0.0921
-24.4491
0.2076
166.633
9.1700
13
0.657
64.6829
1.9441
-62.8550
0.1041
-27.3280
0.2744
135.000
9.2358
14
0.748
52.4407
1.8819
-81.2585
0.1203
-42.4402
0.3667
119.222
11.9422
15
0.847
37.8038
1.7404
-98.7912
0.1282
-56.5826
0.3722
107.510
11.3280
16
0.850
22.3398
1.5849
-114.6893
0.1336
-70.6290
0.3581
88.987
10.7432
17
0.805
8.2106
1.4012
-126.9353
0.1314
-79.1178
0.3802
62.424
10.2803
18
0.847
-2.1121
1.2311
-137.7326
0.1283
-86.3122
0.4026
43.087
9.8217
19
0.831
-5.6214
1.1617
-149.0193
0.1356
-95.3322
0.5087
38.695
9.3289
20
0.791
-6.5681
1.0774
-161.2119
0.1371
-105.6583
0.5497
33.199
8.9538
21
0.866
-20.5483
1.1110
-177.5857
0.1568
-119.1149
0.4284
22.075
8.5032
22
0.836
-35.5536
1.1102
164.5367
0.1726
-134.0608
0.4058
-11.227
8.0846
23
0.853
-52.6197
1.0759
146.8712
0.1744
-148.6982
0.4751
-42.014
7.9027
24
0.958
-69.2200
1.0823
131.6291
0.1820
-161.9434
0.5114
-46.505
7.7438
25
0.844
-81.7547
1.0406
112.8443
0.1822
-177.5051
0.4558
-62.423
7.5681
26
0.733
-104.6242
0.9783
88.5591
0.1721
159.3426
0.3791
-103.875
4.2994
Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579
Email sales@alphaind.com
www.alphaind.com
3
Specifications subject to change without notice. 6/99A
212
0.005 (0.13 mm)
4 PLACES
0.036 (0.91 mm)
0.070 (1.78 mm)
0.070 (1.78 mm)
4 PLACES
0.020 (0.51 mm)
2 PLACES
DRAIN
SOURCE
GATE
SOURCE
45
0.067
(1.70 mm)
MAX.
213
0.005 (0.13 mm)
4 PLACES
0.036 (0.91 mm)
2 PLACES
0.07 (1.78 mm)
0.027 (0.70 mm)
4 PLACES
0.020 (0.51 mm)
2 PLACES
DRAIN
SOURCE
GATE
SOURCE
45
0.067
(1.70 mm)
Max.
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