N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Switching Regulators
Switching Converters
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
Maximum Drain Current Continuous
15
I
DM
Maximum Drain Current Pulsed
30
A
30V/12A, R
DS(ON)
=100m
(max) @ V
GS
=10V
R
DS(ON)
=200m
(max) @ V
GS
=4.5V
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
P a c k a g e C o d e
U : T O -2 5 2 V : S O T -2 2 3
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
T R : T a p e & R e e l
A PM 3055L
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
X X X X X - D a te C o d e
A P M 3 0 5 5 L U /V :
A P M 3 0 5 5 L
X X X X X
G
D
S
1
2
3
Top View of TO-252
S
D
G
1
2
3
Top View of SOT-223
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
TO-252
50
T
A
=25
C
SOT-223
3
TO-252
20
P
D
Maximum Power Dissipation
T
A
=100
C
SOT-223
1.2
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
APM3055L
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
D
=250
A
30
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V, V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250
A
1
3
V
I
GSS
Gate Leakage Current
V
GS
=
20V, V
DS
=0V
100
nA
V
GS
=10V, I
D
=12A
75
100
R
DS(ON)
Drain-Source On-state
Resistance
V
GS
=4.5V, I
D
=6A
100
200
m
V
SD
Diode Forward Voltage
I
S
=6A, V
GS
=0V
0.6
1.3
V
Dynamic
Q
g
Total Gate Charge
8.5
12
Q
gs
Gate-Source Charge
1.1
Q
gd
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
D
=2A
1.8
nC
t
ON
Turn-on Time
40
t
d(ON)
Turn-on Delay Time
11
t
r
Turn-on Rise Time
17
t
d(OFF)
Turn-off Delay Time
37
t
f
Turn-off Fall Time
20
t
OFF
Turn-off Time
V
DD
=15V, I
D
=2A,
V
GS
=10V, R
G
=6
60
ns
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw
3
Typical Characteristics
0
1
2
3
4
0
5
10
15
20
25
V
GS
= 10, 9, 8, 7, 6V
V
GS
= 5V
V
GS
= 3V
V
GS
= 4V
Output Characteristics
V
DS
- Drain-to-Source Voltage (V)
I
DS
- D
r
a
i
n
C
u
r
r
e
n
t(A
)
0
1
2
3
4
5
6
0
5
10
15
20
25
-55
o
C
+25
o
C
+125
o
C
Transfer Characteristics
V
GS
- Gate-to-Source Voltage (V)
I
D
- Dr
i
n
a
cu
rre
n
t
(
A
)
-50
-25
0
25
50
75
100
125
150
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Threshold Voltage v.s.T
J
I
DS
=250
A
V
GS
(t
h
)
(V
)
T
j
- Junction Temperature(
o
C)
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1.0
1.1
1.2
Normalized V
GS(th)
v.s. T
J
I
DS
=250
A
V
GS
(
t
h
)
- N
o
r
m
a
l
iz
ed
T
j
- Junction Temperature(
o
C)
3
4
5
6
7
8
9
70
80
90
100
110
120
130
140
150
160
170
On-Resistance v.s. Gate to Source Voltage
I
D
=10A
R
DS
(
O
N
)
- O
n
-R
es
istan
c
e
(m
)
V
GS
- Gate Voltage (V)
-50
-25
0
25
50
75
100
125
150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
On-Resistance v.s. Junction Temperature
V
GS
=10V
I
DS
=12A
R
DS(
O
N)
-
On-Resi
st
ance (
)
(
N
or
m
a
l
i
z
e
d)
T
J
-Junction Temperature(
o
C)
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw
4
Typical Characteristics (Cont.)
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
Gate Charge
V
DS
=15V
I
DS
= 2A
V
GS
-
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e (
V
)
Q
G
-Gate Charge(nC)
0
5
10
15
20
25
30
0
100
200
300
400
500
Crss
Coss
Ciss
Capacitance
V
DS
- Drain-to-Source Voltage(V)
C
a
paci
t
a
nce (
pF)
0.4
0.8
1.2
1.6
2.0
2.4
0.1
1
10
Source-Drain Diode Forward Voltage
T
J
=25
o
C
T
J
=150
o
C
I
S
- S
o
u
r
ce
C
u
r
r
e
n
t
(A
)
V
SD
- Source to Drain Voltage
1E-5
1E-4
1E-3
0.01
0.1
1
10
0
10
20
30
40
50
Single Pulse Power Capability
Pe
a
k
P
o
w
e
r
(W
)
Time (sec)
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
0.01
0.1
1
Normalized Thermal Transient Impedance, Junction to Ambient
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
thJA
=50
o
C/W
3.T
JM
-T
A
=P
DM
Z
thJA
N
o
r
m
al
i
z
ed
E
f
f
e
c
t
i
v
e T
r
an
si
en
t
Th
e
r
m
a
l
I
m
pe
da
nc
e
Square Wave Pulse Duration(sec)
J
J
2
2
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw
5
Package Information
TO-252( Reference JEDEC Registration TO-252)
Millimet ers
Inches
Dim
Min .
Max.
Min .
Max.
A
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
E
6.35
6.73
0.250
0.265
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
0.020
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
L2
D
L1
b
b2
E
C1
A
H
L
C
A1
e1
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