N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
APM4410
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
SO
- 8
A P M 441 0
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 4 4 1 0 K :
A P M 4 4 1 0
X X X X X
X X X X X - D a te C o d e
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
Maximum Drain Current Continuous
11.5
I
DM
Maximum Drain Current Pulsed
50
A
T
A
=25
C
2.5
P
D
Maximum Power Dissipation
T
A
=100
C
1.0
W
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
N-Channel MOSFET
G
S
D
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
30V/11.5A, R
DS(ON)
= 9m
(typ.) @ V
GS
= 10V
R
DS(ON)
=14.5m
(typ.) @ V
GS
= 4.5V
High Density Cell Design
Reliable and Rugged
SO-8 Package
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
APM4410
www.anpec.com.tw
2
Thermal Characteristics
Symbol
Parameter
Rating
Unit
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
C
R
JA
Thermal Resistance - Junction to Ambient
50
C/W
Electrical Characteristics
(T
A
=25C unless otherwise noted)
APM4410
Symbol
Parameter
Test Condition
Min.
Typ
a
. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
A
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
1
uA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250
A
1
3
V
I
GSS
Gate Leakage Current
V
GS
=20V, V
DS
=0V
100
nA
V
GS
=10V, I
D
=11.5A
9
11
R
DS(ON)
Drain-Source On-state Resistance
b
V
GS
=4.5V, I
D
=5A
14.5
16
m
V
SD
Diode Forward Voltage
b
I
SD
=2.3A, V
GS
=0V
0.6
1.2
V
Dynamic
a
Q
g
Total Gate Charge
45
60
Q
gs
Gate-Source Charge
10
Q
gd
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
D
=10A
8
nC
t
d(ON)
Turn-on Delay Time
16
25
t
r
Turn-on Rise Time
24
35
t
d(OFF)
Turn-off Delay Time
78
110
t
f
Turn-off Fall Time
V
DD
=15V, R
L
=15
,
I
D
=1A , V
GEN
=10V,
R
G
=6
,
42
80
ns
C
iss
Input Capacitance
2000
C
oss
Output Capacitance
400
C
rss
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V
Frequency = 1.0MHZ
220
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
300s, duty cycle 2%
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
APM4410
www.anpec.com.tw
3
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
V
GS
=5,6,7,8,9,10V
V
GS
=3V
V
GS
=4V
0
1
2
3
4
5
0
10
20
30
40
50
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
T
J
=125
C
T
J
=25
C
T
J
=-55
C
-50
-25
0
25
50
75
100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
I
DS
=250
A
0
5
10
15
20
25
30
35
0.000
0.004
0.008
0.012
0.016
0.020
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
V
GS
=10V
V
GS
=4.5V
V
GS(th)-
Threshold V
oltage (V)
(Normalized)
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
APM4410
www.anpec.com.tw
4
0
9
18
27
36
45
0
2
4
6
8
10
Typical Characteristics Cont.
0
2
4
6
8
10
0.00
0.02
0.04
0.06
0.08
0.10
On-Resistance vs. Gate-to-Source Voltage
R
DS (ON)
-On-Resistance (
)
Gate Voltage (V)
I
DS
=11.5A
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On-Resistance (
)
(Normalized)
T
j
-Junction Temperature (
C)
V
GS
=10V
I
DS
=11.5A
Gate Charge
Q
G
-Total Gate Charge (nC)
V
GS
-Gate-to-Source V
oltage (V)
V
DS
=15V
I
DS
=11.5A
0
5
10
15
20
25
30
0
500
1000
1500
2000
2500
3000
Capacitance Characteristics
V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
APM4410
www.anpec.com.tw
5
Typical Characteristics Cont.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
50
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
T
J
=25
C
T
J
=150
C
0.01
0.1
1
10
0
20
40
60
80
Time (sec)
Single Pulse Power
Power (W)
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
Normalized Transient Thermal Transient Impedence, Junction to Ambient
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