N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9410
A P M 941 0
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 9 4 1 0 K :
A P M 9 4 1 0
X X X X X
X X X X X - D a te C o d e
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
30V/8A , R
DS(ON)
=15m
(typ.) @ V
GS
=10V
R
DS(ON)
=23m
(typ.) @ V
GS
=4.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
*
Maximum Drain Current Continuous
8
I
DM
Maximum Drain Current Pulsed
32
A
* Surface Mounted on FR4 Board, t
10 sec.
Pin Description
SO-8
Top View
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
N-Channel MOSFET
G
S
D
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
2
APM9410
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings (Cont.)
(T
A
= 25
C unless otherwise noted)
APM9410
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
30
V
V
DS
=24V , V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V, V
GS
=0V, T
j
= 55
C
5
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1
1.5
2
V
I
GSS
Gate Leakage Current
V
GS
=
20V , V
DS
=0V
100
nA
V
GS
=10V , I
DS
=4A
15
20
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=4.5V , I
DS
=2A
23
32
m
V
SD
a
Diode Forward Voltage
I
SD
=2A , V
GS
=0V
0.7
1.3
V
Dynamic
b
Q
g
Total Gate Charge
15
20
Q
gs
Gate-Source Charge
5.8
Q
gd
Gate-Drain Charge
V
DS
=15V , I
DS
= 10A
V
GS
=5V ,
3.8
nC
t
d(ON)
Turn-on Delay Time
11
18
T
r
Turn-on Rise Time
17
26
t
d(OFF)
Turn-off Delay Time
37
54
T
f
Turn-off Fall Time
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6
20
30
ns
C
iss
Input Capacitance
1200
C
oss
Output Capacitance
220
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
100
pF
Symbol
Parameter
Rating
Unit
T
A
=25
C
2.5
W
P
D
Maximum Power Dissipation
T
A
=100
C
1.0
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance Junction to Ambient
50
C/W
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
3
APM9410
0
5
10
15
20
25
30
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
Typical Characteristics
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
VG=4,4.5,6,8,10V
V
GS
=2.5V
V
GS
=3V
V
GS
=3.5V
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
V
GS(th)
-Threshold V
oltage (V)
(Normalized)
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
V
GS
=10V
V
GS
=4.5V
I
DS
=250
A
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
T
J
=125
C
T
J
=25
C
T
J
=-55
C
R
DS
(on)-On-Resistance (
)
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
4
APM9410
Typical Characteristics (Cont.)
3
4
5
6
7
8
9
10
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
R
DS
(on)-On-Resistance (
)
(Normalized)
Gate Voltage (V)
T
j
-Junction Temperature (
C)
I
DS
=4A
V
GS
=10V
I
DS
=4A
100
1000
2000
500
30
0.1
1
10
Capacitance Characteristics
V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
Frequency=1MHz
R
DS
(on)-On-Resistance (
)
0
5
10
15
20
25
30
0
2
4
6
8
10
Gate Charge
Q
G
-Total Gate Charge (nC)
V
GS
-Gate-to-Source V
oltage (V)
V
DS
=15V
I
DS
=10A
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
5
APM9410
Typical Characteristics (Cont.)
10
-2
10
-1
10
0
10
1
10
2
0
10
20
30
40
50
60
Time (sec)
Single Pulse Power
Power (W)
R
thjc
= 2
C/W
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.01
0.1
1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
T
J
=-55
C
T
J
=25
C
T
J
=125
C
Normalized Transient Thermal Transient Impedence, Junction to Ambient
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