Symbol
Max Q2
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Units
R
JL
Symbol
Units
R
JL
40
48
62.5
C/W
Maximum Junction-to-Lead
C
Steady-State
35
62.5
t 10s
R
JA
48
Maximum Junction-to-Ambient
A
Steady-State
74
C/W
Maximum Junction-to-Ambient
A
Steady-State
74
110
Maximum Junction-to-Lead
C
Steady-State
35
40
Maximum Junction-to-Ambient
A
Gate-Source Voltage
12
30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Drain-Source Voltage
Max Q1
W
-55 to 150
-55 to 150
Junction and Storage Temperature Range
2
1.28
1.28
T
A
=25C
T
A
=70C
2
A
7.8
30
40
9.8
6.8
T
A
=25C
T
A
=70C
Power Dissipation
P
D
Pulsed Drain Current
B
Continuous Drain
Current
A
I
D
30
20
8.5
Typ
Max
Parameter: Thermal Characteristics MOSFET Q1
Parameter: Thermal Characteristics MOSFET Q2
Maximum Junction-to-Ambient
A
t 10s
Typ
Max
R
JA
110
AO4824
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A I
D
=9.8A (V
GS
= 10V)
R
DS(ON)
< 17m
<13m (V
GS
= 10V)
R
DS(ON)
< 27m
<15m (V
GS
= 4.5V)
General Description
The AO4824 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters.
Standard Product AO4824 is Pb-free
(meets ROHS & Sony 259 specifications). AO4824L
is a Green Product ordering option. AO4824 and
AO4824L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
SOIC-8
Alpha & Omega Semiconductor, Ltd.
AO4824
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.003
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
30
A
13.8
17
T
J
=125C
20
25
21
27
m
g
FS
23
S
V
SD
0.76
1
V
I
S
3
A
C
iss
1040
1250
pF
C
oss
180
pF
C
rss
110
pF
R
g
0.7
0.85
Q
g
(10V)
19.2
23
nC
Q
g
(4.5V)
9.36
11.2
nC
Q
gs
2.6
nC
Q
gd
4.2
nC
t
D(on)
5.2
7.5
ns
t
r
4.4
6.5
ns
t
D(off)
17.3
25
ns
t
f
3.3
5
ns
t
rr
16.7
21
ns
Q
rr
6.7
10
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8.5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
Reverse Transfer Capacitance
I
F
=8.5A, dI/dt=100A/
s
Q1 Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=4.5V, I
D
=6A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=8.5A
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=8.5A
Total Gate Charge
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 4 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4824
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
13.4
16
22
26
0.76
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
12
14
16
18
20
22
24
26
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=8.5A
25C
125C
I
D
=8.5A
Alpha & Omega Semiconductor, Ltd.
AO4824
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
13.4
16
22
26
0.76
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=8.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AO4824
Symbol
Min
Typ
Max Units
BV
DSS
30
V
0.004
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.6
1.1
2
V
I
D(ON)
40
A
10.5
13
T
J
=125C
13.4
17
12
15
m
g
FS
30
37
S
V
SD
0.73
1
V
I
S
3
A
C
iss
3656 4250
pF
C
oss
256
pF
C
rss
168
pF
R
g
0.86
1.05
Q
g
30.5
36
nC
Q
gs
4.5
nC
Q
gd
8.5
nC
t
D(on)
5.5
8.2
ns
t
r
3.1
5
ns
t
D(off)
52.4
75
ns
t
f
5.7
8.5
ns
t
rr
Body Diode Reverse Recovery time
I
F
=9.8A, dI/dt=100A/
s
21.5
26
ns
Q
rr
Body Diode Reverse Recovery charge I
F
=9.8A, dI/dt=100A/
s
11
15
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q2 Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 12V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=9.8A
m
V
GS
=4.5V, I
D
=9A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
V
DS
=5V, I
D
=9.8A
Diode Forward Voltage
I
S
=1A
SWITCHING PARAMETERS
Total Gate Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.6
,
R
GEN
=3
V
GS
=4.5V, V
DS
=15V, I
D
=9.8A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 4: Aug 2005
Alpha & Omega Semiconductor, Ltd.
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