Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
160
200
180
220
R
JL
130
160
Junction and Storage Temperature Range
A
P
D
C
0.625
0.4
-55 to 150
T
A
=70C
I
D
-2
-1.6
-8
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
-20
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO7415
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -2A (V
GS
= -10V)
R
DS(ON)
< 100m
(V
GS
= -10V)
R
DS(ON)
< 125m
(V
GS
= -4.5V)
R
DS(ON)
< 170m
(V
GS
= -2.5V)
General Description
The AO7415 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 2.5V, in the
small SOT363 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM.
Standard product
AO7415 is Pb-free (meets ROHS & Sony 259
specifications). AO7415L is a Green Product
ordering option. AO7415 and AO7415L are
electrically identical.
D
S
G
S
G
D
D
D
D
SC-70-6
(SOT-363)
Top View
Alpha & Omega Semiconductor, Ltd.
AO7415
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
T
J
=55C
-2.5
1
A
10
A
V
GS(th)
-0.7
-0.9
-1.4
V
I
D(ON)
-15
A
80
100
T
J
=125C
115
98
125
m
130
170
m
g
FS
5
S
V
SD
-0.84
-0.95
V
I
S
0.6
A
C
iss
512
620
pF
C
oss
77
pF
C
rss
62
pF
R
g
9.2
13
Q
g
4.9
6
nC
Q
gs
3.5
nC
Q
gd
3.7
nC
t
D(on)
11
13
ns
t
r
8
10
ns
t
D(off)
34
41
ns
t
f
12
15
ns
t
rr
13
17
ns
Q
rr
4
6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
V
GS
=-2.5V, I
D
=-1.0A
V
GS
=-10V, I
D
=-2A
Reverse Transfer Capacitance
I
F
=-2A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
I
GSS
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
V
DS
=-16V, V
GS
=0V
Zero Gate Voltage Drain Current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-1.3A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=5
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate Drain Charge
On state drain current
V
GS
=-4.5V, V
DS
=-5V
Gate-Body leakage current
V
DS
=0V, V
GS
=10V
V
DS
=0V, V
GS
=12V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO7415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
-3.5V
V
GS
=-1.5V
-3V
-6V
-8V
-4V
-2V
-2.5V
-5V
-7V
-9V
-10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
60
80
100
120
140
160
180
0
1
2
3
4
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.4
0.8
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=-10V
V
GS
=-2.5V
I
D
=-1.3A
I
D
=-1A
60
100
140
180
220
260
300
340
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-2A
25C
125C
I
D
=-2A
V
GS
=-2.5V
V
GS
=-4.5V
Alpha & Omega Semiconductor, Ltd.
AO7415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
o
l
ts
)
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
2
4
6
8
10
12
14
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
C
oss
C
rss
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-10V
I
D
=-2A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=220C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
T
on
T
P
D
T
on
P
D
Alpha & Omega Semiconductor, Ltd.
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