Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
R
JA
51
60
R
JC
1.4
2.5
20
Pulsed Drain Current
Gate-Source Voltage
Drain-Source Voltage
I
D
38
27
Continuous Drain
Current
B
T
C
=25C
G
T
C
=100C
B
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
A
30
140
60
60
Parameter
Maximum
Units
60
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25C
P
D
W
T
C
=100C
30
Avalanche Current
C
Junction and Storage Temperature Range
-55 to 175
Thermal Characteristics
Parameter
Units
C
Maximum Junction-to-Case
B
Steady-State
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
AOU400
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 38A (V
GS
= 10V)
R
DS(ON)
< 20m
(V
GS
= 10V)
R
DS(ON)
< 25m
(V
GS
= 4.5V)
General Description
The AOU40
0 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU400 is Pb-free
(meets ROHS & Sony 259 specifications). AOU400L
is a Green Product ordering option. AOU400 and
AOU400L are electrically identical.
G
D
S
G D S
TO-251
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
AOU400
Symbol
Min
Typ
Max
Units
BV
DSS
60
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.1
3
V
I
D(ON)
60
A
16
20
T
J
=125C
31
20
25
m
g
FS
5.6
S
V
SD
0.74
1
V
I
S
4
A
C
iss
1920
2300
pF
C
oss
155
pF
C
rss
116
pF
R
g
0.65
0.8
Q
g
(10V)
47.6
68
nC
Q
g
(4.5V)
24.2
30
nC
Q
gs
6
nC
Q
gd
14.4
nC
t
D(on)
7.4
ns
t
r
5.1
ns
t
D(off)
28.2
ns
t
f
5.5
ns
t
rr
34
41
ns
Q
rr
46
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=48V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=30V, R
L
=1.5
,
R
GEN
=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=30V, I
D
=20A
Total Gate Charge
Gate Drain Charge
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device in a still air environment with T
A
=25C.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AOU400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
10
20
30
40
50
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
14
16
18
20
22
24
0
10
20
30
40
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
a
lize
d O
n-
Re
s
is
t
a
nc
e
V
GS
=10V
V
GS
=4.5V
I
D
=20A
I
D
=20A
10
20
30
40
50
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AOU400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Vo
l
ts)
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
aci
tan
ce (p
F
)
C
iss
0
200
400
600
800
1E-05 1E-04 0.001 0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Po
wer
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
Jc
Norm
a
lize
d Tra
ns
ie
nt
T
h
er
mal
R
esi
stan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
mp
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
1ms
DC
T
J(Max)
=175C
T
A
=25C
R
DS(ON)
limited
V
DS
=30V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
Jc
.R
Jc
R
JC
=2.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AOU400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A
),
Peak A
val
an
ch
e C
u
r
r
en
t
0
20
40
60
80
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
ow
e
r Dis
s
ipa
t
ion (
W
)
0
10
20
30
40
50
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
Curre
nt
ra
t
ing I
D
(A
)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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