Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
R
JA
105
125
R
JL
2.5
3
V
V
20
25
A
-18
16.2
50
A
Gate-Source Voltage
Drain-Source Voltage
-30
Pulsed Drain Current
-18
-18
-40
Avalanche Current
C
Continuous Drain
Current
B,G
Maximum
Units
Parameter
T
A
=25C
G
T
A
=100C
G
Absolute Maximum Ratings T
A
=25C unless otherwise noted
I
D
Junction and Storage Temperature Range
-55 to 175
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25C
P
D
W
T
C
=100C
C
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
Steady-State
C/W
AOU417
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -18A (V
GS
= -10V)
R
DS(ON)
< 22m (V
GS
= -10V)
R
DS(ON)
< 40m (V
GS
= -4.5V)
General Description
The AOU417 uses advanced trench technology to
provide excellent RDS(ON), and low gate charge.
This device is suitable for use as a load switch or in
PWM applications.
Standard product AOU417 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU417L is a Green Product ordering option.
AOU417 and AOU417L are electrically identical
.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.
AOU417
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1.4
-2
-2.7
V
I
D(ON)
-40
A
18
22
T
J
=125C
25
30
29
40
m
g
FS
21
S
V
SD
-0.7
-1
V
I
S
-1.2
A
C
iss
1573
1900
pF
C
oss
319
pF
C
rss
211
pF
R
g
6.7
10
Q
g
(10V)
29.3
35
nC
Q
g
(4.5V)
15
18
nC
Q
gs
6.1
nC
Q
gd
7
nC
t
D(on)
11.7
ns
t
r
29
ns
t
D(off)
42
ns
t
f
32.5
ns
t
rr
28.3
37
ns
Q
rr
20.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-18A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-18A
Reverse Transfer Capacitance
I
F
=-18A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-10A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-18A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=0.83
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-18A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
Rev1: August 2005
Alpha & Omega Semiconductor, Ltd.
AOU417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-3V
-5V
-3.5V
-4V
-10V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
10
15
20
25
30
35
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=-4.5V
V
GS
=-10V
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
rmalized On-
R
esist
ance
V
GS
=-10V
I
D
=-18A
V
GS
=-4.5V
I
D
=-10A
0
10
20
30
40
50
60
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
I
D
=-18A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AOU417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10s
0.1
1
10
100
0.1
1
10
100
-VDS (Volts)
-I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10s
100s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
100m
1s
10s
0
2
4
6
8
10
0
5
10
15
20
25
30
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
o
l
ts)
V
DS
=-15V
I
D
=-18A
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capaci
tance (pF)
C
iss
C
oss
C
rss
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=3C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r
(
W
)
T
J(Max)
=175C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AOU417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
-I
D
(A),
P
eak Aval
anche Current
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
wer D
i
ssi
pat
i
on (
W
)
0
5
10
15
20
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rrent
rat
i
ng -
I
D
(A)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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