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Электронный компонент: 5082-3040

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL TEST
CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
V
BR
I
R
= 10
A
150 V
V
F
I
F
= 100 mA
1.0
V



I
F
= 50 mA I
R
= 250 mA
400
nS
I
L
I
F
= 0 mA P
IN
= 1.0 mW F = 10 GHz
0.5
dB
I
I
F
= 100 mA P
IN
= 1.0 mW F = 10 GHz
20
dB
SWR
I
F
= 0 mA P
IN
= 1.0 mW F = 10 GHz
1.5:1
---

NOTE:
The ASI 5082-3040 was designed to be a single piece hermetic replacement for the HP 5082-3040 diode. It features an
internal low pass filter structure with a corner frequency of 20 GHz which yields insertion loss and isolation performance equivalent to
the original HP device while maintaining mechanical compatible in most applications.
MICROSTRIP/STRIPLINE PIN DIODE SWITCH
DESCRIPTION:
The ASI
5082-3040
is a Silicon PIN
Diode Module Designed for Reflective
Attenuator and Switching Applications
from 1 GHz to 18 GHz.
FEATURES INCLUDE:
Direct Replacement for HP 5082-3040
Isolation = 20 dB min. at 10 GHz
Hermetic Package

MAXIMUM RATINGS
I
F
250 mA
V
R
70 V
P
DISS
2.5 W @ T
C
= 25 C
T
J
-65 C to +125 C
T
STG
-65 C to +125 C



JC
40 C/W
PACKAGE STYLE M-50
ORDER CODE: ASI30415
Anode
5082-3040