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Электронный компонент: MRF422MP

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 200 mA
35
V
BV
CES
I
C
= 100 mA
85
V
BV
CBO
I
C
= 100 mA
85
V
BV
EBO
I
E
= 10 mA
3.0
V
I
CES
V
CE
= 28 V
20
mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
10
30
120
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
420
pF
P
out
V
CE
= 28 V
f = 30 MHz
150
W
(PEP)
G
PE



IMD
V
CC
= 28 V
I
CQ
= 150 mA P
out
= 150 W
(PEP)
I
C(max)
= 6.7 A
f = 30 MHz
10 13
45
-33
dB
%
dB
NPN SILICON RF POWER TRANSISTOR
MRF422/MP
DESCRIPTION:
The
ASI MRF422
is Designed for 2.0
MHz to 30 MHz, 28 V High Power
Linear Amplifier Applications. For h
FE
Matched Pairs Order ASI MRF422MP.
MAXIMUM RATINGS
I
20 A
V
40 V
P
DISS
290 W @ T
C
= 25 C
T
J
-65 C to +150 C
T
STG
-65 C to +150 C



JC
0.6 C/W
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 3 = BASE
2 & 4 = EMITTER