A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CBO
I
C
= 1.0 mA
40
V
BV
CEO
I
C
= 1.0 mA
28
V
BV
EBO
I
E
= 1.0 mA
3.5
V
I
CBO
V
CB
= 28 V
500
A
h
FE
V
CE
= 5.0 V I
C
= 100 mA
20
120
---
C
OB
V
CB
= 28 V f = 1.0 MHz
5.0
pF
P
G
C
V
CE
= 28 V
P
OUT
= 2.0 W f = 400 MHz
12
50
13
dB
%
NPN RF POWER TRANSISTOR
MRF5174
DESCRIPTION:
The
MRF5174
is a Common Emitter
Device Designed for Class A, AB and
C Amplifier Applications in the 225 to
400 MHz Band.
FEATURES INCLUDE:
High Gain
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
I
C
0.5 A
V
CBO
40 V
P
DISS
8.75 W @ T
C
= 25
O
C
T
J
-55
O
C to +200
O
C
T
STG
-55
O
C to +200
O
C
JC
20
O
C/W
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45
A
#8-32 UNC
I
J
C
B
E
E
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