A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 1 mA
45
V
BV
CER
I
C
= 5 mA R
BE
= 10
45
V
BV
EBO
I
E
= 1 mA
3.5
V
I
CBO
V
CB
= 28 V
1.0
mA
h
FE
V
CE
= 5.0 V I
C
= 200 mA
15
120
---
C
ob
V
CB
= 28 V f = 1.0 MHz
3.5
pF
P
G
C
V
CC
= 28 V P
OUT
= 3.0 W f = 2.0 GHz
10
35
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI2003
DESCRIPTION:
The
ASI 2003
is Designed for General
Purpose Class C Power Amplifier
Applications up to 2300 MHz.
FEATURES:
P
G
= 10 dB min. at 3 W/ 2,000 MHz
Hermetic Microstrip Package
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
600 mA
V
CC
35 V
P
DISS
21.8 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
JC
15
O
C/W
PACKAGE STYLE .250 2L FLG
ORDER CODE: ASI10528
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G
I
J
K
H
F
B
E
C
D
A
N
M
P
.060 x 45
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19
.185 / 4.70
.135 / 3.43
.119 / 3.02
.125 / 3.18
PDF 
ZIP