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Электронный компонент: VFT30-28

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
V
(BR)DSS
V
GS
= 0 V I
DS
= 10 mA
60
---
---
V
I
DSS
V
DS
= 28 V V
GS
= 0 V
---
---
4.0
mA
I
GSS
V
DS
= 0 V V
GS
= 20 V
---
---
1.0



A
V
GS
V
DS
= 10 V I
D
= 25 mA
1.0
---
6.0
V
G
FS
V
DS
= 10 V I
D
= 500 mA
0.5
---
---
mho
C
iss
C
oss
C
rss
V
DS
= 28 V V
GS
= 0 V f = 1.0 MHz

46
33
6.0

pF
VHF POWER MOSFET
N-Channel Enhancement Mode
VFT30-28
DESCRIPTION:
The
VFT30-28
is a gold metallized N-
Channel enhancement mode
MOSFET, intended for use in 28VDC
large signal applications up to
400MHz.

FEATURES:
P
G
= 14 dB Typ. at 30 W /175MHz
10:1 Load VSWR Capability
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
D
5.0 A
V
(BR)DSS
65 V
V
DGR
65 V
V
GS
40 V
P
DISS
100 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +150 C



JC
1.75 C/W
PACKAGE STYLE .380 4L FLG






















ORDER CODE: ASI10703
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
S
G
S
D
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND.
Specifications are subject to change without notice.
VFT30-28
CHARACTERISTICS
T
C
= 25C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
P
G



D
V
DD
= 28 V I
DQ
= 25 mA P
OUT
= 30 W
P
IN
= 1.5 W f = 175 MHz
13
50
14
60

dB
%