AT27C800
1
Features
Read Access Time - 100 ns
Word-wide or Byte-wide Configurable
8-Megabit Flash and Mask ROM Compatable
Low Power CMOS Operation
- 100
A Maximum Standby
- 50 mA Maximum Active at 5 MHz
Wide Selection of JEDEC Standard Packages
- 42-Lead 600 mil Cerdip and PDIP
- 44-Lead SOIC (SOP)
- 48-Lead TSOP (12 mm x 20 mm)
5V
10% Power Supply
High Reliability CMOS Technology
- 2,000 ESD Protection
- 200 mA Latchup Immunity
Rapid
TM
Programming Algorithm - 50
s/word (typical)
CMOS and TTL Compatible Inputs and Outputs
Integrated Product Identification Code
Commercial and Industrial Temperature Ranges
Description
The AT27C800 is a low-power, high performance 8,388,608-bit UV erasable program-
mable read only memory (EPROM) organized as either 512K by 16 or 1024K by 8
bits. It requires a single 5V power supply in normal read mode operation. Any word
can be accessed in less than 100 ns, eliminating the need for speed-reducing WAIT
states. The x16 organization makes this part ideal for high-performance 16- and 32-bit
microprocessor systems.
0801A-A
8-Megabit
(512K x 16 or
1024K x 8)
UV Erasable
EPROM
AT27C800
Preliminary
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
O0 - O15
Outputs
O15/A-1
Output/Address
BYTE/VPP
Byte Mode/
Program Supply
CE
Chip Enable
OE
Output Enable
NC
No Connect
TSOP
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
NC
NC
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
O11
O3
O10
O2
O9
O1
O8
O0
OE
GND
CE
A0
CDIP, PDIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
SOIC (SOP)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
(continued)
AT27C800
2
The AT27C800 can be organized as either word-wide or
byte-wide. The organization is selected via the BYTE/V
PP
pin. When BYTE/V
PP
is asserted high (V
IH
), the word-wide
organization is selected and the O15/A-1 pin is used for
O15 data output. When BYTE/V
PP
is asserted low (V
IL
),the
byte wide organization is selected and the O15/A-1 pin is
used for the address pin A-1. When the AT27C800 is logi-
cally regarded as x16 (word-wide), but read in the byte-
wide mode, then with A-1=V
IL
the lower eight bits of the 16
bit word are selected with A-1 =V
IH
the upper 8 bits of the
16-bit word are selected.
In read mode, the AT27C800 typically consumes 15 mA.
Standby mode supply current is typically less than 10
A
.
The AT27C800 is available in industry standard JEDEC-
approved one-time programmable (OTP)PDIP, SOIC
(SOP), and TSOP as well as UV erasable windowed Cer-
dip packages. The device features two-line control(CE,OE)
to eliminate bus contention in high-speed systems.
With high density 512K word or 1024K-bit storage capabil-
ity, the AT27C800 allows firmware to be to be stored reli-
ably and to be accessed by the system without the delays
of mass storage media.
Atmel's AT27C800 has additional features that ensure high
quality and efficient production use. The Rapid
TM
Program-
ming Algorithm reduces the time required to program the
part and guarantees reliable programming. Programming
time is typically only 50
s/word. The Integrated Product
Identification Code electronically identifies the device and
manufacturer. This feature is used by industry standard
programming equipment to select the proper programming
equipment and voltages.
Erasure Characteristics
The entire memory array of the AT27C800 is erased (all
outputs read as V
OH
) after exposure to ultraviolet light at a
wavelength of 2,537. Complete erasure is assured after a
minimum of 20 minutes of exposure using 12,000
W/cm
2
intensity lamps spaced one inch away from the chip. Mini-
mum erase time for lamps at other intensity ratings can be
calculated from the minimum integrated erasure dose of 15
W.sec/cm
2
. To prevent unintentional erasure, an opaque
label is recommended to cover the clear window on any UV
erasable EPROM that will be subjected to continuous
flourescent indoor lighting or sunlight.
System Considerations
Switching between active and standby conditions via the
Chip Enable pin may produce transient voltage excursions.
Unless accommodated by the system design, these tran-
sients may exceed data sheet limits, resulting in device
non-conformance. At a minimum, a 0.1
F high frequency,
low inherent inductance, ceramic capacitor should be uti-
lized for each device. This capacitor should be connected
between the V
CC
and Ground terminals of the device, as
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arrays, a 4.7
F bulk electrolytic capacitor should
be utilized, again connected between the V
CC
and Ground
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.
Block Diagram
AT27C800
3
Absolute Maximum Ratings*
Temperature Under Bias ...................-55
C to +125
C
*NOTICE:
Stresses beyond those listed under "Absolute
Maximum Ratings" may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Note:
1.
Minimum voltage is -0.6V DC which may under-
shoot to -2.0V for pulses of less than 20 ns. Max-
imum output pin voltage is Vcc + 0.75V DC which
may overshoot to + 7.0V for pulses of less than
20 ns.
Storage Temperature ........................-65
C to +150
C
Voltage on Any Pin with
with Respect to Ground.....................-2.0V to +7.0V
(1)
Voltage on A9 with
Respect to Ground .........................-2.0V to +14.0V
(1)
V
PP
Supply Voltage with
Respect to Ground ..........................-2.0V to +14.0V
(1)
Integrated UV Erase Dose............... 7258 W sec/cm
2
Operating Modes
Notes:
1. X can be V
IL
or V
IH.
2. Refer to the programming characteristics tables in this data sheet.
3. V
H
= 12.0
0.5V.
4. Two identifier words may be selected. All Ai inputs are held low (V
IL
) except A9,which is set to V
H
, and A0, which is toggled
low (V
IL
) to select the Manufacturer's Identification word and high (V
IH
) to select the Device Code word.
5. Standby V
CC
current (I
SB
) is specified with V
PP
= V
CC
.
V
CC
> V
PP
will cause a slight increase in I
SB
.
Mode\Pin
CE
OE
Ai
BYTE/V
PP
Outputs
O
0
-O
7
O
8
-O
14
O
15
/A-1
Read Word-wide
V
IL
V
IL
X
(1)
V
IH
D
OUT
D
OUT
D
OUT
Read Byte-wide Upper
V
IL
V
IL
X
(1)
V
IL
D
OUT
High Z
V
IH
Read Byte-wide Lower
V
IL
V
IL
X
(1)
V
IL
D
OUT
High Z
V
IL
Output Disable
X
(1)
V
IH
X
(1)
X
High Z
Standby
V
IH
X
(1)
X
(1)
X
(5)
High Z
Rapid Program
(2)
V
IL
V
IH
Ai
V
PP
D
IN
PGM Verify
X
V
IL
Ai
V
PP
D
OUT
PGM Inhibit
V
IH
V
IH
X
(1)
V
PP
High Z
Product Identification
(4)
V
IL
V
IL
A9 = V
H
(3)
A0 = V
IH
or V
IL
A1 - A18 = V
IL
V
IH
Identification Code
AT27C800
4
DC and Operating Characteristics for Read Operation
Notes:
1. V
CC
must be applied simultaneously or before V
PP
, and removed simultaneously or after V
PP
.
2. V
PP
may be connected directly to V
CC
except during programming. The supply current would then be the sum of I
CC
and I
PP
.
Symbol
Parameter
Condition
Min
Max
Units
I
LI
Input Load Current
V
IN
= 0V to V
CC
1.0
A
I
LO
Output Leakage Current
V
OUT
= 0V to V
CC
5.0
A
I
PP1
(2)
V
PP
(1)
Read/Standby Current
V
PP
= V
CC
10
A
I
SB
V
CC
(1)
Standby Current
I
SB1
(CMOS)
CE = V
CC
0.3V
100
A
I
SB2
(TTL)
CE = 2.0 to V
CC
+ 0.5V
1.0
mA
V
CC
Active Current
f = 5MHz, I
OUT
= 0 mA,
CE = V
IL
50
mA
V
IL
Input Low Voltage
-0.6
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= -400 mA
2.4
V
DC and AC Operating Conditions for Read Operation
AT27C800
-10
-12
-15
Operating Temperature (Case)
Com.
0
C - 70
C
0
C - 70
C
0
C - 70
C
Ind.
-40
C - 85
C -40
C - 85
C
-40
C - 85
C
V
CC
Power Supply
5V
10%
5V
10%
5V
10%
AC Characteristics for Read Operation
Notes:
2,3,4,5. See the AC Waveforms for Read Operation diagram.
Symbol
Parameter
Condition
AT27C800
Units
-10
-12
-15
Min
Max
Min
Max
Min
Max
t
ACC
(3)
Address to Output Delay
CE = OE = V
IL
100
120
150
ns
t
CE
(2)
CE to Output Delay
OE = V
IL
100
120
150
ns
t
OE
(2,3)
OE to Output Delay
CE = V
IL
40
40
50
ns
t
DF
(4,5)
OE or CE High to Output Float,
whichever occured first
30
35
40
ns
t
OH
(4)
Output Hold from Address CE or OE,
whichever occured first
5.0
5.0
5.0
ns
t
ST
BYTE High to Output Valid
100
120
150
ns
t
STD
BYTE Low to Output Transition
40
50
60
ns
AT27C800
5
Byte-Wide Read Mode AC Waveforms
(1)
Note:
1.
BYTE/V
PP
= V
IL
BYTE Transition AC Waveforms
Notes:
1.
Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified.
2.
OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE.
3.
OE may be delayed up to t
ACC
- t
OE
after the address is valid without impact on t
ACC
.
4.
This parameter is only sampled and is not 100% tested.
5.
Output float is defined as the point when data is no longer driven.
A0 - A18
A-1
O - O
0
7
BYTE/V
PP
t
ACC
t
ST
t
STD
t
OH
t
OH
O - O
8
15
HI-Z
VALID
VALID
DATA OUT
DATA OUT
DATA OUT
Byte-Wide Read Mode AC Waveforms
(1)
Note:
1.
BYTE/V
PP
= V
IH
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