AT28HC256
256 (32K x 8)
High Speed
CMOS
E
2
PROM
Features
Fast Read Access Time - 70 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
Fast Write Cycle Times
Page Write Cycle Time: 3 ms or 10 ms Maximum
1 to 64-Byte Page Write Operation
Low Power Dissipation
80 mA Active Current
3 mA Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
Single 5V
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Full Military, Commercial, and Industrial Temperature Ranges
Description
The AT28HC256 is a high-performance Electrically Erasable and Programmable
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel's advanced nonvolatile CMOS technology, the AT28HC256
offers access times to 70 ns with power dissipation of just 440 mW. When the
AT28HC256 is deselected, the standby current is less than 5 mA.
(continued)
Note: PLCC package pins 1 and
17 are DON'T CONNECT.
CERDIP, PDIP,
FLATPACK
Top View
LCC, PLCC
Top View
Pin Name
Function
A0 - A14
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don't Connect
Pin Configurations
TSOP
Top View
PGA
Top View
0007F
AT28HC256
2-279
Block Diagram
The AT28HC256 is accessed like a Static RAM for the
read or write cycle without the need for external compo-
nents. The device contains a 64-byte page register to al-
low writing of up to 64-bytes simultaneously. During a
write cycle, the address and 1 to 64-bytes of data are in-
ternally latched, freeing the addresses and data bus for
other operations. Following the initiation of a write cycle,
the device will automatically write the latched data using
an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write
cycle has been detected a new access for a read or write
can begin.
Atmel's 28HC256 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved
data retention characteristics. An optional software data
protection mechanism is available to guard against inad-
vertent writes. The device also includes an extra 64-bytes
of E
2
PROM for device identification or tracking.
Description (Continued)
Temperature Under Bias................. -55C to +125C
Storage Temperature...................... -65C to +150C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
2-280
AT28HC256
Device Operation
READ: The AT28HC256 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state when either CE or OE is high. This dual-
line control gives designers flexibility in preventing bus
contention in their system.
BYTE WRITE: A low pulse on the WE or CE input with CE
or WE low (respectively) and OE high initiates a write cy-
cle. The address is latched on the falling edge of CE or
WE, whichever occurs last. The data is latched by the first
rising edge of CE or WE. Once a byte write has been
started it will automatically time itself to completion. Once
a programming operation has been initiated and for the
duration of t
WC
, a read operation will effectively be a poll-
ing operation.
PAGE WRITE: T h e p a g e w r i t e o p e r a t i o n o f t h e
AT28HC256 allows 1 to 64-bytes of data to be written into
the device during a single internal programming period. A
page write operation is initiated in the same manner as a
byte write; the first byte written can then be followed by 1
to 63 additional bytes. Each successive byte must be writ-
ten within 150
s (t
BLC
) of the previous byte. If the t
BLC
limit is exceeded the AT28C256 will cease accepting data
and commence the internal programming operation. All
bytes during a page write operation must reside on the
same page as defined by the state of the A6 - A14 inputs.
That is, for each WE high to low transition during the page
write operation, A6 - A14 must be the same.
The A0 to A5 inputs are used to specify which bytes within
the page are to be written. The bytes may be loaded in any
order and may be altered within the same load period.
Only bytes which are specified for writing will be written;
unnecessary cycling of other bytes within the page does
not occur.
DATA POLLING: The AT28HC256 features DATA Polling
to indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will
result in the complement of the written data to be pre-
sented on I/O7. Once the write cycle has been completed,
true data is valid on all outputs, and the next write cycle
may begin. DATA Polling may begin at anytime during the
write cycle.
TOGGLE BIT: I n a d d i t i o n t o DATA P o l l i n g t h e
AT28HC256 provides another method for determining the
end of a write cycle. During the write operation, succes-
sive attempts to read data from the device will result in
I/O6 toggling between one and zero. Once the write has
completed, I/O6 will stop toggling and valid data will be
read. Testing the toggle bit may begin at any time during
the write cycle.
(continued)
DATA PROTECTION: If precautions are not taken, inad-
vertent writes to any 5-volt-only nonvolatile memory may
occur during transition of the host system power supply.
Atmel has incorporated both hardware and software fea-
tures that will protect the memory against inadvertent
writes.
HARDWARE PROTECTION: Hardware features protect
against inadvertent writes to the AT28HC256 in the follow-
ing ways: (a) V
CC
sense - if V
CC
is below 3.8V (typical) the
write function is inhibited; (b) V
CC
power-on delay - once
V
CC
has reached 3.8V the device will automatically time
out 5 ms typical) before allowing a write: (c) write inhibit -
holding any one of OE low, CE high or WE high inhibits
write cycles; (d) noise filter - pulses of less than 15 ns (typi-
cal) on the WE or CE inputs will not initiate a write cycle.
SOFTWARE DATA PROTECTION: A software controlled
data protection feature has been implemented on the
AT28HC256. When enabled, the software data protection
(SDP), will prevent inadvertent writes. The SDP feature
may be enabled or disabled by the user; the AT28HC256
is shipped from Atmel with SDP disabled.
SDP is enabled by the host system issuing a series of
three write commands; three specific bytes of data are
written to three specific addresses (refer to Software Data
Protection Algorithm). After writing the 3-byte command
sequence and after t
WC
the entire AT28HC256 will be pro-
tected against inadvertent write operations. It should be
noted, that once protected the host may still perform a
byte or page write to the AT28HC256. This is done by pre-
ceding the data to be written by the same 3-byte command
sequence.
Once set, SDP will remain active unless the disable com-
mand sequence is issued. Power transitions do not dis-
able SDP and SDP will protect the AT28HC256 during
power-up and power-down conditions. All command se-
quences must conform to the page write timing specifica-
tions. It should also be noted that the data in the enable
and disable command sequences is not written to the de-
vice and the memory addresses used in the sequence
may be written with data in either a byte or page write op-
eration.
After setting SDP, any attempt to write to the device with-
out the three byte command sequence will start the inter-
nal write timers. No data will be written to the device; how-
ever, for the duration of t
WC
, read operations will effec-
tively be polling operations.
AT28HC256
2-281
Symbol
Parameter
Condition
Min
Max
Units
I
LI
Input Load Current
V
IN
= 0V to V
CC
+ 1V
10
A
I
LO
Output Leakage Current
V
I/O
= 0V to V
CC
10
A
I
SB1
V
CC
Standby Current TTL
CE = 2.0V to V
CC
+ 1V
AT28HC256-90, -12
3
mA
AT28HC256-70
60
mA
I
SB2
V
CC
Standby Current CMOS
CE = -3.0V to V
CC
+ 1V
AT28HC256-90, -12
300
A
I
CC
V
CC
Active Current
f = 5 MHz; I
OUT
= 0 mA
80
mA
V
IL
Input Low Voltage
0.8
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
I
OL
= 6.0 mA
.45
V
V
OH
Output High Voltage
I
OH
= -4 mA
2.4
V
DC Characteristics
AT28HC256-70
AT28HC256-90
AT28HC256-12
Operating
Temperature (Case)
Com.
0C - 70C
0C - 70C
0C - 70C
Ind.
-40C - 85C
-40C - 85C
-40C - 85C
Mil.
-55C - 125C
-55C - 125C
V
CC
Power Supply
5V
10%
5V
10%
5V
10%
DC and AC Operating Range
Mode
CE
OE
WE
I/O
Read
V
IL
V
IL
V
IH
D
OUT
Write
(2)
V
IL
V
IH
V
IL
D
IN
Standby/Write Inhibit
V
IH
X
(1)
X
High Z
Write Inhibit
X
X
V
IH
Write Inhibit
X
V
IL
X
Output Disable
X
V
IH
X
High Z
Chip Erase
V
IL
V
H
(3)
V
IL
High
Z
3. V
H
= 12.0V
0.5V.
Notes: 1. X can be V
IL
or V
IH
.
2. Refer to AC Programming Waveforms.
Operating Modes
DEVICE IDENTIFICATION: A n e x t r a 6 4 - b y t e s o f
E
2
PROM memory are available to the user for device
identification. By raising A9 to 12V
0.5V and using ad-
dress locations 7FC0H to 7FFFH the additional bytes may
be written to or read from in the same manner as the regu-
lar memory array.
OPTIONAL CHIP ERASE MODE: The entire device can
be erased using a 6-byte software code. Please see Soft-
ware Chip Erase application note for details.
Device Operation (Continued)
2-282
AT28HC256
AT28HC256-70
AT28C256-90
AT28HC256-12
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Units
t
ACC
Address to Output Delay
70
90
120
ns
t
CE
(1)
CE to Output Delay
70
90
120
ns
t
OE
(2)
OE to Output Delay
0
35
0
40
0
50
ns
t
DF
(3, 4)
CE or OE to Output Float
0
35
0
40
0
50
ns
t
OH
Output Hold from OE, CE or
Address, whichever occurred
first
0
0
0
ns
AC Read Characteristics
Notes: 1. CE may be delayed up to t
ACC
- t
CE
after the address
transition without impact on t
ACC
.
2. OE may be delayed up to t
CE
- t
OE
after the falling
edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change without impact on t
ACC
.
3. t
DF
is specified from OE or CE whichever occurs first
(C
L
= 5 pF).
4. This parameter is characterized and is not 100% tested.
AC Read Waveforms
(1, 2, 3, 4)
t
R
, t
F
< 5 ns
Input Test Waveforms and
Measurement Level
Output Test Load
Typ
Max
Units
Conditions
C
IN
4
6
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
Pin Capacitance (f = 1 MHz, T = 25C)
(1)
Note: 1. This parameter is characterized and is not 100% tested.
AT28HC256
2-283
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