1
Features
Low Voltage and Standard Voltage Operation
5.0 (V
CC
= 4.5V to 5.5V)
2.7 (V
CC
= 2.7V to 5.5V)
2.5 (V
CC
= 2.5V to 5.5V)
User Selectable Internal Organization
1K: 128 x 8 or 64 x 16
2K: 256 x 8 or 128 x 16
4K: 512 x 8 or 256 x 16
4-Wire Serial Interface
Self-Timed Write Cycle (10 ms max)
High Reliability
Endurance: 1 Million Write Cycles
Data Retention: 100 Years
ESD Protection: >4000V
8-Pin PDIP and 8-Pin EIAJ SOIC Packages
Description
The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically
Erasable Programmable Read Only Memory) organized as 64/128/256 words of 16
bits each, when the ORG Pin is connected to V
CC
and 128/256/512 words of 8 bits
each when it is tied to ground. The device is optimized for use in many industrial and
commercial applications where low power and low voltage operation are essential.
The AT59C11/22/13 is available in space saving 8-pin PDIP and 8-pin EIAJ SOIC
packages.
The AT59C11/22/13 is enabled through the Chip Select pin (CS), and accessed via a
4-wire serial interface consisting of Data Input (DI), Data Output (DO), and Clock
(CLK). Upon receiving a READ instruction at DI, the address is decoded and the data
is clocked out serially on the data output pin DO, the WRITE cycle is completely self-
timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is
only enabled when the part is in the ERASE/WRITE ENABLE state. Ready/Busy sta-
tus can be monitored upon completion of a programming operation by polling the
Ready/Busy pin.
The AT59C11/22/13 is available in 5.0V
10%, 2.7V to 5.5V and 2.5V to 5.5V ver-
sions.
4-Wire Serial
EEPROMs
1K (128 x 8 or 64 x 16)
2K (256 x 8 or 128 x 16)
4K (512 x 8 or 256 x 16)
AT59C11
AT59C22
AT59C13
Rev. 0173K07/98
4-Wire, 1K
Serial E
2
PROM
Pin Configurations
Pin Name
Function
CS
Chip Select
CLK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
GND
Ground
V
CC
Power Supply
ORG
Internal Organization
RDY/BUSY
Status Output
8-Pin PDIP
8-Pin SOIC
AT59C11/22/13
2
Block Diagram
(1)
Note:
1.
When the ORG pin is connected to V
CC
, the x 16 organization is selected. When it is connected to ground, the x 8 organiza-
tion is selected. If the ORG pin is left unconnected, then an internal pullup device will select the x 16 organization.
Absolute Maximum Ratings*
Operating Temperature .................................. -55
C to +125
C
*NOTICE:
Stresses beyond those listed under "Absolute
Maximum Ratings" may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature ..................................... -65
C to +150
C
Voltage on Any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage........................................... 6.25V
DC Output Current........................................................ 5.0 mA
AT59C11/22/13
3
Note:
1. This parameter is characterized and is not 100% tested.
Note:
1. V
IL
min and V
IH
max are reference only and are not tested.
Pin Capacitance
(1)
Applicable over recommended operating range from T
A
= 25C, f = 1.0 MHz, V
CC
= +5.0V (unless otherwise noted).
Test Conditions
Max
Units
Conditions
C
OUT
Output Capacitance (DO)
5
pF
V
OUT
= 0V
C
IN
Input Capacitance (CS, CLK, DI, RDY/BUSY)
5
pF
V
IN
= 0V
DC Characteristics
Applicable over recommended operating range from: T
AI
= -40C to +85C, V
CC
= +2.5V to +5.5V,
T
AC
= 0C to +70C, V
CC
= +2.5V to +5.5V (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
V
CC1
Supply Voltage
1.8
5.5
V
V
CC2
Supply Voltage
2.5
5.5
V
V
CC3
Supply Voltage
2.7
5.5
V
V
CC4
Supply Voltage
4.5
5.5
V
I
CC
Supply Current
V
CC
= 5.0V
READ at 1.0 MHz
0.5
2.0
mA
WRITE at 1.0 MHz
0.5
2.0
mA
I
SB1
Standby Current
V
CC
= 2.5V
CS = 0V
6.0
10.0
A
I
SB2
Standby Current
V
CC
= 2.7V
CS = 0V
6.0
10.0
A
I
SB3
Standby Current
V
CC
= 5.0V
CS = 0V
21.0
30.0
A
I
IL
Input Leakage
V
IN
= 0V to V
CC
0.1
1.0
A
I
OL
Output Leakage
V
IN
= 0V to V
CC
0.1
1.0
A
V
IL1
(1)
V
IH1
(1)
Input Low Voltage
Input High Voltage
4.5V
V
CC
5.5V
-0.6
2.0
0.8
V
CC
+ 1
V
V
IL2
(1)
V
IH2
(1)
Input Low Voltage
Input High Voltage
2.5V
V
CC
2.7V
-0.6
V
CC
x 0.7
V
CC
x 0.3
V
CC
+ 1
V
V
OL1
V
OH1
Output Low Voltage
Output High Voltage
4.5V
V
CC
5.5V
I
OL
= 2.1 mA
I
OH
= 0.4 mA
2.4
0.4
V
V
OL2
V
OH2
Output Low Voltage
Output High Voltage
2.5V
V
CC
2.7V
I
OL
= 0.15 mA
I
OH
= -0.1 mA
V
CC
- 0.2
0.2
V
AT59C11/22/13
4
Note:
1. This paramter is characterized and is not 100% tested.
AC Characteristics
Applicable over recommended operating range from T
A
= -40C to +85C, V
CC
= +2.5V to +5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
f
CLK
CLK Clock Frequency
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
0
0
0
0
1
1
0.5
0.25
MHz
t
CKH
CLK High Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CKL
CLK Low Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CS
Minimum CS Low Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CSS
CS Setup Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
50
50
100
200
ns
t
DIS
DI Setup Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
CSH
CS Hold Time
Relative to SK
0
ns
t
DIH
DI Hold Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
PD1
Output Delay to `1'
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
PD0
Output Delay to `0'
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
RBD
RDY/BUSY Delay to
Status Valid
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CZ
CS to DO in High
Impedance
AC Test
CS = V
IL
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
WC
Write Cycle Time
0.1
10
ms
Endurance
(1)
5.0V, 25C, Page Mode
1M
Write Cycles
AT59C11/22/13
5
Instruction Set for the AT59C11
Instruction
SB
Op
Code
Address
Data
Comments
x 8
x 16
x 8
x 16
READ
1
10XX
A
6
- A
0
A
5
- A
0
Reads data stored in memory, at
specified address.
EWEN
1
0011
XXXXXXX
XXXXXX
Write enable must precede all
programming modes.
WRITE
1
X1XX
A
6
- A
0
A
5
- A
0
D
7
- D
0
D
15
- D
0
Writes memory location A
n
- A
0
.
ERAL
1
0010
XXXXXXX
XXXXXX
Erases all memory locations. Valid only
at V
CC
= 4.5V to 5.5V.
WRAL
1
0001
XXXXXXX
XXXXXX
D
7
- D
0
D
15
- D
0
Writes all memory locations. Valid only
at V
CC
= 4.5V to 5.5V.
EWDS
1
0000
XXXXXXX
XXXXXX
Disables all programming
instructions.
Instruction Set for the AT59C22
Instruction
SB
Op
Code
Address
Data
Comments
x 8
x 16
x 8
x 16
READ
1
10XX
A
7
- A
0
A
6
- A
0
Reads data stored in memory, at
specified address.
EWEN
1
0011
XXXXXXXX
XXXXXXX
Write enable must precede all
programming modes.
WRITE
1
X1XX
A
7
- A
0
A
6
- A
0
D
7
- D
0
D
15
- D
0
Writes memory location A
n
- A
0
.
ERAL
1
0010
XXXXXXXX
XXXXXXX
Erases all memory locations. Valid only
at V
CC
= 4.5V to 5.5V.
WRAL
1
0001
XXXXXXXX
XXXXXXX
D
7
- D
0
D
15
- D
0
Writes all memory locations. Valid when
V
CC
= 5.0V
10% and Disable Register
cleared.
EWDS
1
0000
XXXXXXXX
XXXXXXX
Disables all programming instructions.
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