1
Rev. 4156FAERO06/04
Features
Operating Voltage: 3.3V
Access Time:
15 ns (Preview) for 3.3V biased only (AT60142E)
17 ns and 20 ns for 5V Tolerant
(AT60142ET)
Very Low Power Consumption
Active: 810 mW (Max) @ 15 ns
Standby: 215 W (Typ)
Wide Temperature Range: -55 to +125
C
500 Mils Width Package
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 Micron Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 4000V
Description
The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8
bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an
extremely low standby supply current (Typical value = 65
A) with a fast access time
at 15 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15
(1)
and 20 ns
specification.
The ET
(1)
version is a variant allowing for 5V tolerance: it is available in 17 ns and 20
ns specification.
The AT60142E/ET are processed according to the methods of the latest revision of
the MIL PRF 38535 or ESA SCC 9000.
It is produced on a radiation hardened 0.25 m CMOS process.
Note:
1. Preliminary: contact factory for availability.
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
AT60142E
AT60142ET
3
AT60142E/ET
4156FAERO06/04
Pin Description
Table 1. Pin Names
Table 2. Truth Table
(1)
Name
Description
A0 - A18
Address Inputs
I/O1 - I/O8
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
Vcc
Power Supply
VRef
Internal Reference Voltage Output
GND
Ground
CS
WE
OE
Inputs/Outputs
Mode
H
X
X
Z
Deselect/
Power-down
L
H
L
Data Out
Read
L
L
X
Data In
Write
L
H
H
Z
Output Disable
Note:
1. L=low, H=high, X= H or H, Z=high impedance.
5
AT60142E/ET
4156FAERO06/04
Electrical Characteristics
Absolute Maximum Ratings*
Note:
1. 7V for ET version.
Military Operating Range
Recommended DC Operating Conditions
Note:
1. 5.8V for ET version
Capacitance
Note:
1. Guaranteed but not tested.
Supply Voltage to GND Potential: ......................... -0.5V + 4.6V
DC Input Voltage:.....................................GND -0.5V to 4.6V
(1)
DC Output Voltage High Z State: ................ GND -0.5V to 4.6V
Storage Temperature: ................................... -65
C to + 150
C
Output Current Into Outputs (Low): ............................... 20 mA
Electro Statics Discharge Voltage: .... > 4001V (MIL STD 883D
Method 3015.3)
*NOTE:
Stresses beyond those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Operating Voltage
Operating Temperature
Military
3.3
+
0.3V
-55
C to + 125
C
Parameter
Description
Min
Typ
Max
Unit
Vcc
Supply voltage
3
3.3
3.6
V
GND
Ground
0.0
0.0
0.0
V
V
IL
Input low voltage
GND - 0.3
0.0
0.8
V
V
IH
Input high voltage
2.2
V
CC
+ 0.3
(1)
V
Parameter
Description
Min
Typ
Max
Unit
C
in
(1)
Input low voltage
8
pF
C
out
(1)
Output high voltage
8
pF
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