Rev. 4785BSIGE05/04
Features
35 dBm Output Power in CW Mode
High Power Added Efficiency (PAE)
Single Supply Operation (No Negative Rail)
Simple Analog Power Ramp Control
Low Current Consumption in Power-down Mode (Typically
15 mA)
Small SMD Package (PSSOP28 with Heat Slug)
Applications
Professional Phones
Hands-free Sets
ISM Band Application
Wireless Infrastructure Pre-amplifiers
Description
The ATR0906 is a monolithic integrated power amplifier IC manufactured with Atmel's
Silicon-Germanium (SiGe) process. Due to its open architecture it can be used either
as a two or three-stage amplifier. Every stage can be matched individually which
allows applications in a wide frequency range. The ATR0906 can be used from
600 MHz up to 1 GHz in both linear and non-linear (saturated) mode. The analog
control input sets dynamically the power gain (either for every single stage or the
entire power amplifier).Constant gain mode is also possible. The ATR0906 is suited for
the CW mode up to 35 dBm.
All these features, including wide power ramp control, makes the ATR0906 a very flex-
ible power amplifier serving many different applications.
In addition to phones, the application range includes car identification systems and
various wireless communication systems. The single supply voltage operation at
+3.5 V and a negligible leakage current in power-down mode allow to significantly sim-
plify the power management of the application.
Figure 1. Block Diagram
Buf1
RF3
RFin1
RFout/Vcc3
BG
Vctl
Vcc_ctl
Vctl3
22-25
7
12
10
Match
Vctl1
RF2
RF1
Match
Match
Buf2
Buf3
Vbias3
Gain3
Vbias2
Vctl2
Gain2
Gain1
BGout
Vcc2
5
GND3
26
GND1
6
Vcc1
28
Vb3_dc
20
9
19
Vb2_dc
8
18
15
17
14
16
13
11
GND3
21
4
RFin2
General-
purpose
VHF/UHF
Power Amplifier
(600 - 1000 MHz)
ATR0906
Preliminary
2
ATR0906 [Preliminary]
4785BSIGE05/04
Pin Configuration
Figure 2. Pinning SSOP28
Pin Description
Pin
Symbol
Function
1
NC
Not connected
2
NC
Not connected
3
NC
Not connected
4
RFin2
RF input (two-stage operation)
5
Vcc1
Supply voltage (first stage)
6
GND1
Ground
7
RFin1
RF input (three-stage operation)
8
Vb2_dc
Input for gain setting (second stage)
9
Vbias2
Output Buf2
10
Vcc_ctl
Supply voltage control block
11
BGout
Output band gap
12
Vctl
Control voltage input
13
Vctl1
Control voltage input (first stage)
14
Vctl2
Control voltage input (second stage)
15
Vctl3
Control voltage input (third stage)
16
Gain1
Gain setting Buf1
17
Gain2
Gain setting Buf2
18
Gain3
Gain setting Buf3
19
Vbias3
Output Buf3
20
Vb3_dc
Input for gain setting (third stage)
21
GND3
(1)
Ground
22
RFout/Vcc3
RF output/supply voltage (third stage)
23
RFout/Vcc3
RF output/supply voltage (third stage)
24
RFout/Vcc3
RF output/supply voltage (third stage)
25
RFout/Vcc3
RF output/supply voltage (third stage)
26
GND3
(1)
Ground
27
NC
Not connected
28
Vcc2
Supply voltage (second stage)
Note:
1. GND2 and GND3 are internally connected and both are connected to the down-set paddle
NC
NC
NC
RFin2
Vcc1
GND1
RFin1
Vb2_dc
Vbias2
Vcc_ctl
BGout
Vctl
Vctl1
Vctl2
Vcc2
NC
GND3
RFout/Vcc3
RFout/Vcc3
RFout/Vcc3
RFout/Vcc3
GND3
Vb3_dc
Vbias3
Gain3
Gain2
Gain1
Vctl3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
3
ATR0906 [Preliminary]
4785BSIGE05/04
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Value
Unit
Supply voltage V
CC
, no RF
V
CC1
, V
CC2
, V
CC3
0 to +5.5
V
Input power
P
RFin
10
dBm
Gain control voltage
(1)
V
ctl
0 to +2.5
V
Operating case temperature
T
c
-40 to +100
C
Storage temperature
T
stg
-40 to +150
C
Maximum output power
P
RFout
36
dBm
Note:
1. The part may not survive all maximums applied simultaneously.
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction case
R
thJC
19
K/W
Operating Range
Parameters
Symbol
Value
Unit
Supply voltage
V
CC
2.7 to 5.0
V
Ambient temperature
T
amb
-40 to +85
C
Input frequency
f
RFin
600 to 1000
MHz
Electrical Characteristics
Test conditions (if not otherwise specified): V
CC
= +3.5 V, T
amb
= +25
C, 50
input and 50
output match
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Power Supply
1.1
Current consumption,
power-down mode
(leakage current)
V
ctl
0.2 V
10,
22-25,
28
I
15
25
A
A
2
750 MHz Amplifier Mode
2.1
Frequency range
f
RFin750
700
800
MHz
C
2.2
Output power,
normal conditions
V
CC
= 3.5 V
T
amb
= +25
C
P
RFin
= 3 dBm
R
L
= R
G
= 50
22-25
P
RFout750
34
35.0
dBm
2.3
Extreme conditions
V
CC
= 2.4 V
T
amb
= +85
C
P
RFin
= 3 dBm
R
L
= R
G
= 50
22-25
P
RFout750
32
33.0
dBm
2.4
Input power
7
P
RFin750
3
10
dBm
2.5
Power added
efficiency
V
CC
= 3.5 V
P
RFout
= 35.0 dBm
10,
22-25,
28
PAE
750
45
50
%
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
ATR0906 [Preliminary]
4785BSIGE05/04
2.6
Current consumption,
active mode
P
RFout
= 35.0 dBm
10,
22-25,
28
I
750
1.81
A
2.7
Input VSWR
P
RFin
= 0 to 8 dBm
P
RFout
= 31.0 dBm
7
VSWR
750
2:1
2.8
Stability/load
mismatch
P
RFout
= 31.0 dBm
V
CC
= 4.6 V
22-25
VSWR
750
8:1
2.9
2
nd
harmonic
distortion
22-25
2fo
750
-35
dBc
2.10
3
rd
harmonic distortion
22-25
3fo
750
-35
dBc
2.11
4
th
to 8
th
harmonic
distortion
22-25
4fo
750
to
8fo
750
-35
dBc
2.12
Isolation between
input and output
P
RFin750
= 8 dBm
V
ctl
0.2 V
(power down)
7,
22-25
P
RFout750
-30
dBm
3
830 MHz Amplifier Mode
3.1
Frequency range
f
RFin830
776
870
MHz
C
3.2
Output power,
normal conditions
V
CC
= 3.5 V
T
amb
= +25
C
P
RFin
= 3 dBm
R
L
= R
G
= 50
22-25
P
RFout830
34
35.0
dBm
A
3.3
Extreme conditions
V
CC
= 2.4 V
T
amb
= +85
C
P
RFin
= 3 dBm
R
L
= R
G
= 50
22-25
P
RFout830
31.5
32.5
dBm
C
3.4
Input power
7
P
RFin830
3
10
dBm
A
3.5
Power added
efficiency
V
CC
= 3.5 V
P
RFout
= 35.0 dBm
10,
22-25,
28
PAE
830
43
48
%
A
3.6
Current consumption,
active mode
P
RFout
= 35.0 dBm
10,
22-25,
28
I
830
1.88
A
A
3.7
Input VSWR
P
RFin
= 0 to 8 dBm
P
RFout
= 31.0 dBm
7
VSWR
830
2:1
C
3.8
Stability/load
mismatch
P
RFout
= 31.0 dBm
V
CC
= 4.6 V
22-25
VSWR
830
8:1
C
3.9
2
nd
harmonic
distortion
22-25
2fo
830
-35
dBc
A
3.10
3
rd
harmonic distortion
22-25
3fo
830
-35
dBc
A
3.11
4
th
to 8
th
harmonic
distortion
22-25
4fo
830
to
8fo
830
-35
dBc
A
3.12
Isolation between
input and output
P
RFin830
= 8 dBm
V
ctl
0.2 V
(power down)
7,
22-25
P
RFout830
-30
dBm
A
Electrical Characteristics (Continued)
Test conditions (if not otherwise specified): V
CC
= +3.5 V, T
amb
= +25
C, 50
input and 50
output match
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
ATR0906 [Preliminary]
4785BSIGE05/04
4.
940 MHz Amplifier Mode
4.1
Frequency range
f
RFin940
776
870
MHz
C
4.2
Output power,
normal conditions
V
CC
= 3.5 V
T
amb
= +25
C
P
RFin
= 3 dBm
R
L
= R
G
= 50
22-25
P
RFout940
33
34.0
dBm
C
4.3
Extreme conditions
V
CC
= 2.4 V
T
amb
= +85
C
P
RFin
= 3 dBm
R
L
= R
G
= 50
22-25
P
RFout940
29
30.0
dBm
C
4.4
Input power
7
P
RFin940
3
10
dBm
C
4.5
Power added
efficiency
V
CC
= 3.5 V
P
RFout
= 34.0 dBm
10,
22-25,
28
PAE
940
41
46
%
C
4.6
Current consumption,
active mode
P
RFfout
= 34.0 dBm
10,
22-25,
28
I
940
1.56
A
C
4.7
Input VSWR
P
RFin
= 0 to 8 dBm
P
RFout
= 31.0 dBm
7
VSWR
940
2:1
C
4.8
Stability/load
mismatch
P
RFout
= 31.0 dBm
V
CC
= 4.6 V
22-25
VSWR
940
8:1
C
4.9
2
nd
harmonic
distortion
22-25
2fo
940
-35
dBc
C
4.10
3
rd
harmonic distortion
22-25
3fo
940
-35
dBc
C
4.11
4
th
to 8
th
harmonic
distortion
22-25
4fo
940
to
8fo
940
-35
dBc
C
4.12
Isolation between
input and output
P
RFin940
= 8 dBm
V
ctl
0.2 V
(power down)
7,
22-25
P
RFout940
-30
dBm
C
5
Power Control
5.1
Control curve slope
P
RFout
5 dBm
P
RFout
25 dBm
22-25
S
ctl
300
120
350
150
dB/V
dB/V
C
5.2
Power control range
V
ctl
= 0 to 2.5 V
22-25
G
ctl
60
dB
C
5.3
Control voltage range
12-14
V
ctl
0.5
2.0
V
C
5.4
Control current
P
RFin
= 0 to 8 dBm
V
ctl
= 0 to 2.5 V
12-14
I
ctl
200
A
A
Electrical Characteristics (Continued)
Test conditions (if not otherwise specified): V
CC
= +3.5 V, T
amb
= +25
C, 50
input and 50
output match
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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